Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Transcription

1 Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design resuts in a die sized specificay to offer maximum cost. G PD IRL3302PbF HEXFET Power MOSFET D S V DSS = 20V R DS(on) = 0.020Ω I D = 39A The TO-220 package is universay preferred for a commercia-industria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 4.5V 39 I T C = 0 C Continuous Drain Current, V 4.5V 25 A I DM Pused Drain Current 160 P C = 25 C Power Dissipation 57 W Linear Derating Factor 0.45 W/ C V GS Gate-to-Source Votage ± V V GSM Gate-to-Source Votage 14 V (Start Up Transient, tp = 0µs) E AS Singe Puse Avaanche Energy 130 mj I AR Avaanche Current 23 A E AR Repetitive Avaanche Energy 5.7 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew bf in (1.1N m) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 2.2 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 7/30/04

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 20 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance V GS = 4.5V, I D = 23A Ω V GS = 7.0V, I D = 23A V GS(th) Gate Threshod Votage 0.70 V V DS = V GS, I D = 250µA g fs Forward Transconductance 21 S V DS = V, I D = 23A I DSS Drain-to-Source Leakage Current 25 V DS = 20V, V GS = 0V µa 250 V DS = V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 0 V GS = V na Gate-to-Source Reverse Leakage -0 V GS = -V Q g Tota Gate Charge 31 I D = 23A Q gs Gate-to-Source Charge 5.7 nc V DS = 16V Q gd Gate-to-Drain ("Mier") Charge 13 V GS = 4.5V, See Fig. 6 t d(on) Turn-On Deay Time 7.2 V DD = V t r Rise Time 1 I ns D = 23A t d(off) Turn-Off Deay Time 41 R G = 9.5Ω, V GS = 4.5V t f Fa Time 89 R D = 2.4Ω, Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 1300 V GS = 0V C oss Output Capacitance 520 pf V DS = 15V C rss Reverse Transfer Capacitance 190 ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 39 (Body Diode) showing the A G I SM Pused Source Current integra reverse 160 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.3 V T J = 25 C, I S = 23A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 23A Q rr Reverse Recovery Charge nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S +L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 0.49mH R G = 25Ω, I AS = 23A. ƒ I SD 23A, di/dt 97A/µs, V DD V (BR)DSS, T J 150 C Puse width 300µs; duty cyce 2%.

3 I D, Drain-to-Source Current (A) 00 VGS TOP 15V V 12V 8.0V V 8.0V 6.0V 6.0V 4.0V 4.0V 3.0V BOTTOM 3.0V 2.5V BOTTOM 2.5V 0 2.5V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Votage (V) I D, Drain-to-Source Current (A) 00 VGS VGS TOP 15V TOP V 12V V 8.0V 8.0V 6.0V 6.0V 4.0V 4.0V 3.0V BOTTOM 3.0V 2.5V BOTTOM 2.5V 0 2.5V 20µs PULSE WIDTH T J = 150 C V DS, Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 150 C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = 39A V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature

4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED V GS, Gate-to-Source Votage (V) I D = 23A V DS = 16V V DS, Drain-to-Source Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) 00 0 T J = 150 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 150 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area

5 I D, Drain Current (A) T C, Case Temperature ( C) E AS, Singe Puse Avaanche Energy (mj) TOP BOTTOM I D A 15A 23A Starting T, Junction Temperature ( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum Avaanche Energy Vs. Drain Current Therma Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc + TC t 1, Rectanguar Puse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case

6 ( Ω ) R DS (on), Drain-to-Source On Resistance VGS = 4.5V VGS = 7.0V I D, Drain Current (A) RDS(on), Drain-to-Source On Resistance ( Ω ) A V GS I D = 39A, Gate-to-Source Votage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Votage

7 TO-220AB Package Outine Dimensions are shown in miimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.555) (.530) (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) 2.54 (.0) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE AS S EMBLY LINE "C" Note: "P" in assemby ine position indicates "Lead-Free" INT E RNAT IONAL RE CTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information. 07/04

8 Note: For the most current drawings pease refer to the IR website at: