Linear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

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1 PD B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (<.mm) Avaiabe in Tape and Ree Fast Switching G S 2 3 D V DSS = 20V R DS(on) = 0.045Ω Description These N-Channe MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in battery and oad management. A thermay enhanced arge pad eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCIA cards. The therma resistance and power dissipation are the best avaiabe. Micro3 Absoute Maximum Ratings Parameter Max. Units V DS Drain- Source Votage 20 V I T A = 25 C Continuous Drain Current, V 4.5V 4.2 I T A = 70 C Continuous Drain Current, V 4.5V 3.4 A I DM Pused Drain Current 33 P A = 25 C Power Dissipation.25 P A = 70 C Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambientƒ 75 0 C/W 5/7/00

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 20 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.0 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 4.5V, I D = 4.2A Ω V GS = 2.5V, I D = 3.6A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 5.8 S V DS = V, I D = 4.0A I DSS Drain-to-Source Leakage Current.0 V DS = 6V, V GS = 0V µa 25 V DS = 6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V na Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge I D = 4.0A Q gs Gate-to-Source Charge nc V DS = V Q gd Gate-to-Drain ("Mier") Charge V GS = 5.0V t d(on) Turn-On Deay Time 7.5 V DD = V t r Rise Time I D =.0A ns t d(off) Turn-Off Deay Time 54 R G = 6Ω t f Fa Time 26 R D = Ω C iss Input Capacitance 740 V GS = 0V C oss Output Capacitance 90 pf V DS = 5V C rss Reverse Transfer Capacitance 66 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo.3 (Body Diode) showing the A I SM Pused Source Current integra reverse G 33 (Body Diode) p-n junction diode. V SD Diode Forward Votage.2 V T J = 25 C, I S =.3A, V GS = 0V t rr Reverse Recovery Time 6 24 ns T J = 25 C, I F =.3A Q rr Reverse Recovery Charge nc di/dt = 0A/µs D S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Surface mounted on FR-4 board, t 5sec. Puse width 300µs; duty cyce 2%. 2

3 I D, Drain-to-Source Current (A) 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V I D, Drain-to-Source Current (A) 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 50 C 0. 0 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) 0 T = 25 J C T J = 50 C V DS= 5V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = 4.0A V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Votage (V) I D = 4.0A V DS = V C rss 0 0 V DS, Drain-to-Source Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage 0 00 OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) I D, Drain Current (A) 0 us 0us ms ms TA = 25 C TJ = 50 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 4.0 I D, Drain Current (A) T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature 00 Therma Response (Z thja ) 0 D = PDM 0.0 t SINGLE PULSE (THERMAL RESPONSE) t2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + TA t, Rectanguar Puse Duration (sec) Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5

6 R DS(on), Drain-to -Source Votage ( Ω ) R DS ( on ), Drain-to-Source On Resistance ( Ω ) IRLML VGS = 2.5V Id = 4.0A VGS = 4.5V V GS, Gate -to -Source Votage ( V ) i D, Drain Current ( A ) Fig. On-Resistance Vs. Gate Votage Fig 2. On-Resistance Vs. Drain Current 6

7 Micro3 Package Outine Dimensions are shown in miimeters (inches) 3 E - A - - C - B 3X D - B e e 0. (.004) M C A S B S 3 A A LEAD ASSIGNMENTS - G ATE 2 - SOURCE 3 - DR AIN H 0.20 (.008 ) M A M (.003) θ L 3X C 3X INCHES MILLIMETERS DIM MIN MAX MIN MAX A A B C D e.0750 BASIC.90 BASIC e.0375 BASIC 0.95 BASIC E H L θ MINIMUM RECOMMENDED FOOTPRINT 0.80 (.03 ) 3X 0.90 (.035 ) 3X 2.00 (.079 ) NOTES:. DIMENSIO NING & TOLERANCING PER ANSI Y4.5M CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH (.037 ) 2X Micro3 Part Marking Information 7

8 Micro3 Tape & Ree Information Dimensions are shown in miimeters (inches) 8mm 4mm FEED DIRECTION NOTES:. OUTLINE CONFORMS TO EIA-48 & EIA-54. Ø 7" 8mm NOTES :. OUTLINE CONFORMS TO EIA-48 & EIA-54. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteeafe, Surrey CR3 OBL, UK Te: (0) IR CANADA: 5 Lincon Court, Brampton, Ontario L6T3Z2, Te: (905) IR GERMANY: Saaburgstrasse 57, 6350 Bad Homburg Te: (0) IR ITALY: Via Liguria 49, 07 Borgaro, Torino Te: IR JAPAN: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Te: 8 (0) IR SOUTHEAST ASIA: Kim Seng Promenade, Great Word City West Tower, 3-, Singapore Te: (0) IR TAIWAN:6 F. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Te: 886-(0) Data and specifications subject to change without notice. 5/00 8