Linear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

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1 Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie ( <.mm) Avaiabe in Tape & Ree TSSOP-8 PD A HEXFET Power MOSFET V DSS = -20V R DS(on) = 0.030Ω Description HEXFET power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the ruggedized device design, that Internationa Rectifier is we known for, provides the designer with an extremey efficient and reiabe device for battery and oad management. The TSSOP-8 package has 45% ess footprint area than the standard SO-8. This makes the TSSOP-8 an idea device for appications where printed circuit board space is at a premium. The ow profie (<.mm) aows it to fit easiy into extremey thin environments such as portabe eectronics and PCMCIA cards. Absoute Maximum Ratings Parameter Max. Units V DS Drain- Source Votage -20 V I T C = 25 C Continuous Drain Current, V -4.5V ±4.7 I T C = 70 C Continuous Drain Current, V -4.5V ±3.8 A I DM Pused Drain Current ±38 P C = 25 C Power Dissipation.0 P C = 70 C Power Dissipation 0.64 W Linear Derating Factor W/ C V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 25 C/W 5/25/2000

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage -20 V V GS = 0V, I D = -250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.02 V/ C Reference to 25 C, I D = -ma R DS(on) Static Drain-to-Source On-Resistance V GS = -4.5V, I D = -4.7A Ω V GS = -2.5V, I D = -3.8A V GS(th) Gate Threshod Votage V V DS = V GS, I D = -250µA g fs Forward Transconductance S V DS = -V, I D = -4.7A I DSS Drain-to-Source Leakage Current -.0 V DS = -20V, V GS = 0V µa -25 V DS = -6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V na Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge I D = -4.7A Q gs Gate-to-Source Charge nc V DS = -6V Q gd Gate-to-Drain ("Mier") Charge V GS = -5.0V t d(on) Turn-On Deay Time 5 V DD = -V t r Rise Time 54 I D = -.0A ns t d(off) Turn-Off Deay Time 80 R D = Ω t f Fa Time 2 R G = 24Ω C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 380 pf V DS = -5V C rss Reverse Transfer Capacitance 270 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo -.0 (Body Diode) showing the A I SM Pused Source Current integra reverse G -38 (Body Diode) p-n junction diode. V SD Diode Forward Votage -.2 V T J = 25 C, I S = -.0A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -.0A Q rr Reverse RecoveryCharge 6 24 nc di/dt = 0A/µs D S Notes: Repetitive rating; puse width imited by max. junction temperature. ƒ When mounted on inch square copper board, t< sec Puse width 300µs; duty cyce 2%. 2

3 -I D, Drain-to-Source Current (A) 00 0 VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -.50V -.50V -I D, Drain-to-Source Current (A) 00 0 VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -.50V -.50V 20µs PULSE WIDTH 0. T J = 25 C V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics 0 0 -I D, Drain-to-Source Current (A) T J = 25 C T J = 50 C -I SD, Reverse Drain Current (A) T = 50 J C T J = 25 C V DS = -5V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) V GS = 0 V V SD,Source-to-Drain Votage (V) Fig 3. Typica Transfer Characteristics Fig 4. Typica Source-Drain Diode Forward Votage 3

4 -V GS(th), Variace ( V ) C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Votage (V) I D = -4.7A V DS =-6V 0 0 -V DS, Drain-to-Source Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage OPERATION IN THIS AREA LIMITED BY R DS(on) I D = -250µA -I I D, Drain Current (A) 0 us 0us ms ms T J, Temperature ( C ) TA = 25 C TJ = 50 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Threshod Votage Vs. Temperature Fig 8. Maximum Safe Operating Area 4

5 Power (W) I D, Drain Current (A) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Time (sec) Fig. Typica Power Vs. Time 00 Therma Response (Z thja ) 0 D = SINGLE PULSE Notes: (THERMAL RESPONSE). Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + TA t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Typica Effective Transient Therma Impedance, Junction-to-Ambient 5

6 R DS (on), Drain-to-Source On Resistance ( Ω) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = -4.7A V GS= -4.5V T J, Junction Temperature ( C) V GS = -2.5V V GS = -4.5V I D, Drain Current (A) Fig 2. Normaized On-Resistance Vs. Temperature Fig 3. Typica On-Resistance Vs. Drain Current I D = -4.7A R DS(on), Drain-to -Source On Resistance ( Ω) V GS, Gate -to -Source Votage (V) Fig 4. Typica On-Resistance Vs. Gate Votage 6

7 TSSOP-8 Package Outine WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CANADA: 5 Lincon Court, Brampton, Ontario L6T3Z2, Te: (905) IR GERMANY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITALY: Via Liguria 49, 07 Borgaro, Torino Te: IR JAPAN: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: IR SOUTHEAST ASIA: Kim Seng Promenade, Great Word City West Tower, 3-, Singapore Te: IR TAIWAN:6 F. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Te: Data and specifications subject to change without notice. 5/