IRFBA90N20DPbF HEXFET Power MOSFET
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1 SMPS MOSFET PD IRFBA90N20DPbF HEXFET Power MOSFET Appications High frequency DC-DC converters Lead-Free V DSS R DS(on) max I D 200V 0.023Ω 98A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design, (See App. Note AN1) Fuy Characterized Avaanche Votage and Current Super-220 Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V 98 I T C = C Continuous Drain Current, V 10V 71 A I DM Pused Drain Current 390 P C = 25 C Power Dissipation 650 W Linear Derating Factor 4.3 W/ C V GS Gate-to-Source Votage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 6.3 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Sodering Temperature, for 10 seconds 300 (1.6mm from case ) Recommended Cip Force 20 N Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.23 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 58 Notes through are on page /15/04
2 T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.22 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 10V, I D = 59A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA 25 V µa DS = 200V, V GS = 0V I DSS Drain-to-Source Leakage Current 250 V DS = 160V, V GS = 0V, T J = 150 C Gate-to-Source Forward Leakage V GS = 30V I GSS na Gate-to-Source Reverse Leakage - V GS = -30V T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 41 S V DS = 50V, I D = 59A Q g Tota Gate Charge I D = 59A Q gs Gate-to-Source Charge nc V DS = 160V Q gd Gate-to-Drain ("Mier") Charge V GS = 10V t d(on) Turn-On Deay Time 23 V DD = V t r Rise Time 160 ns I D = 59A t d(off) Turn-Off Deay Time 39 R G = 1.2Ω t f Fa Time 77 V GS = 10V C iss Input Capacitance 6080 V GS = 0V C oss Output Capacitance 1040 V DS = 25V C rss Reverse Transfer Capacitance 150 pf ƒ = 1.0MHz C oss Output Capacitance 7500 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 410 V GS = 0V, V DS = 160V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 790 V GS = 0V, V DS = 0V to 160V Avaanche Characteristics Parameter Typ. Max. Units E AS Singe Puse Avaanche Energy 960 mj I AR Avaanche Current 59 A E AR Repetitive Avaanche Energy 65 mj Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 98 (Body Diode) showing the A G I SM Pused Source Current integra reverse 390 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.5 V T J = 25 C, I S = 59A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 59A Q rr Reverse RecoveryCharge µc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) 2
3 I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFBA90N20DPbF 0 10 VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 0 VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 1 5.0V V µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Votage (V) 1 20µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics I D = 98A T J = 175 C T J = 25 C 1.00 V DS = 15V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) V GS = 10V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) V GS, Gate-to-Source Votage (V) IRFBA90N20DPbF V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss I D = 59A V DS = 160V V DS = V V DS = 40V 0 Coss 6.0 Crss V DS, Drain-to-Source Votage (V) Q G Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage T J = 175 C 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 25 C µsec 10 1msec 1.00 V GS = 0V V SD, Source-toDrain Votage (V) Tc = 25 C Tj = 175 C Singe Puse 10msec V DS, Drain-toSource Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4
5 LIMITED BY PACKAGE V DS R D 80 R G V GS D.U.T. - V DD I D, Drain Current (A) V Puse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 V DS 90% T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms 1 Therma Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C t 1, Rectanguar Puse Duration (sec) Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
6 15V 2000 I D V DS L DRIVER 1600 TOP BOTTOM 24A 42A 59A R G D.U.T I AS - V DD A 20V tp 0.01Ω Fig 12a. Uncamped Inductive Test Circuit V (BR)DSS tp E AS, Singe Puse Avaanche Energy (mj) Starting T, Junction Temperature ( J C) I AS Fig 12c. Maximum Avaanche Energy Vs. Drain Current Fig 12b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 10 V Q GS Q G Q GD 12V.2µF 50KΩ.3µF D.U.T. V - DS V G V GS 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 13b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Appied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 14. For N-Channe HEXFET Power MOSFETs 7
8 Super-220 ( TO-273AA ) Package Outine A [.433] [.394] 5.00 [.196] 4.00 [.158] B 9.00 [ [ [ 1.50 [.059] 0.50 [.020] [.590] [.552] [ [ [.157] 3.50 [.138] [.570] [.512] 2.55 [.] 2X 1.30 [.051] 3X 0.90 [.036] 0.25 [.010] B A 1.00 [.039] 4X 0.70 [.028] 3.00 [.118] 2.50 [.099] MOSFET IGBT Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 0.55mH R G = 25Ω, I AS = 59A. ƒ I SD 59A, di/dt 170A/µs, V DD V (BR)DSS, T J 175 C Puse width 300µs; duty cyce 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss whie V DS is rising from 0 to 80% V DSS Cacuated continuous current based on maximum aowabe junction temperature. Package imitation current is 95A. 8
9 Super-220 (TO-273AA) Part Marking Information EXAMPLE: THIS IS AN IRFBA22N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFBA22N50A 719C DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Note: "P" in assemby ine position indicates "Lead-Free" TOP Super-220 not recommended for surface mount appication. Data and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (310) TAC Fax: (310) Visit us at for saes contact information.09/04 9
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationFB180SA10. HEXFET Power MOSFET V DSS = 100V. R DS(on) = W I D = 180A
PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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Logic-Leve Gate Drive dvanced Process Technoogy Surface Mount (IRLZ34NS) Low-profie through-hoe (IRLZ34NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description PD - 95583 IRLZ34NSPbF
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Surface Mount (IRFBC20S) Low-profie through-hoe (IRFBC20L) Avaiabe in Tape & Ree (IRFBC20S) Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fuy Avaanche Rated PRELIMINARY G PD - 9.1014
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A
PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
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