C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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1 Advanced Process Technoogy Surface Mount (IRFZ44ES) Low-profie through-hoe (IRFZ44EL) 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free S Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The D 2 Pak is a surface mount power package capabe of accommodating die sizes up to HEX-4. It provides the highest power capabiity and the owest possibe on-resistance in any existing surface mount package. The D 2 Pak is suitabe for high current appications because of its ow interna connection resistance and can dissipate up to 2.0W in a typica surface mount appication. The through-hoe version (IRFZ44EL) is avaiabe for ow-profie appications. PD IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 48 I T C = 0 C Continuous Drain Current, V V 34 A I DM Pused Drain Current 92 P C = 25 C Power Dissipation W Linear Derating Factor 0.7 W/ C V GS Gate-to-Source Votage ± 20 V E AS Singe Puse Avaanche Energy 220 mj I AR Avaanche Current 29 A E AR Repetitive Avaanche Energy mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew bf in (.N m) Therma Resistance V DSS = 60V R DS(on) = 0.023Ω 2 D Pak I D = 48A Parameter Typ. Max. Units R θjc Junction-to-Case.4 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θja Junction-to-Ambient /9/04 G D TO-262
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 60 V V GS = 0V, I D = 250µA DV (BR)DSS /DT J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance Ω V GS = V, I D = 29A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 5 S V DS = 30V, I D = 29A I DSS Drain-to-Source Leakage Current 25 V DS = 60V, V GS = 0V µa 250 V DS = 48V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V na Gate-to-Source Reverse Leakage -0 V GS = -20V Q g Tota Gate Charge 60 I D = 29A Q gs Gate-to-Source Charge 3 nc V DS = 48V Q gd Gate-to-Drain ("Mier") Charge 23 V GS = V, See Fig. 6 and 3 t d(on) Turn-On Deay Time 2 V DD = 30V t r Rise Time 60 I D = 29A ns t d(off) Turn-Off Deay Time 70 R G = 5Ω t f Fa Time 70 R D =.Ω, See Fig. L S Interna Source Inductance 7.5 nh Between ead, and center of die contact C iss Input Capacitance 360 V GS = 0V C oss Output Capacitance 420 pf V DS = 25V C rss Reverse Transfer Capacitance 60 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 48 (Body Diode) showing the A G I SM Pused Source Current integra reverse 92 (Body Diode) p-n junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 29A, V GS = 0V t rr Reverse Recovery Time 69 4 ns T J = 25 C, I F = 29A Q rr Reverse Recovery Charge nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 520µH R G = 25Ω, I AS = 29A. (See Figure 2) ƒ I SD 29A, di/dt 320A/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%. Uses IRFZ44E data and test conditions ** When mounted on " square PCB ( FR-4 or G- Materia ). For recommended sodering techniques refer to appication note #AN
3 I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 75 C V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.5 I D = 48A V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) 2500 VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds SHORTED Crss = Cgd 2000 Coss = Cds Cgd C iss 500 C oss C rss 0 0 V DS, Drain-to-Source Votage (V) V GS, Gate-to-Source Votage (V) I = D 29 V DS = 48V V DS = 30V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) 00 0 T J = 75 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms T = 25 C ms C TJ = 75 C Singe Puse 0 00 V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4
5 I D, Drain Current (A) I D, Drain Current (A) R D V DS V GS D.U.T. R G V Puse Width µs Duty Factor 0. % Fig a. Switching Time Test Circuit V DS 90% V - DD T C, Case Temperature ( C) T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
6 5V V DS L DRIVER R G D.U.T IAS - V DD A 20V tp 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)DSS tp E AS, Singe Puse Avaanche Energy (mj) TOP BOTTOM I D 2A 2A 29A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF V Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 3b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Appied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For N-Channe HEXFETS 7
8 D 2 Pak Package Outine Dimensions are shown in miimeters (inches) D 2 Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" Note: "P" in assemby ine position indicates "Lead-Free" OR INT ERNATIONAL RECTIFIER LOGO AS S E MBL Y LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE F530S PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE 8
9 TO-262 Package Outine Dimensions are shown in miimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL33L LOT CODE 789 ASSEMBLED ON WW 9, 997 IN THE ASSEMBLY LINE "C" Note: "P" in assemby ine position indicates "Lead-Free" OR INTERNATIONAL RECTIF IER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YE AR 7 = 997 WEEK 9 LINE C INTERNATIONAL RECT IF IER LOGO AS S E MB L Y LOT CODE PART NUMBER DAT E CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 997 WEEK 9 A = ASSEMBLY SITE CODE 9
10 D 2 Pak Tape & Ree Information Dimensions are shown in miimeters (inches) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION TRL.85 (.073).65 (.065).90 (.429).70 (.42).60 (.457).40 (.449) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) (.957) (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MAX (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.039) (.96) (.97) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information. 07/04
11 Note: For the most current drawings pease refer to the IR website at:
D-Pak TO-252AA. I-Pak TO-251AA. 1
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Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
More informationIRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A
PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
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查询 IRF640NLPBF 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple
More informationSMPS MOSFET. V DSS R DS(on) max I D
Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationFB180SA10. HEXFET Power MOSFET V DSS = 100V. R DS(on) = W I D = 180A
PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D
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Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationIRFR/U5505. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.11Ω I D = -18A
Utra Low OnResistance PChanne Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier
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PD - 9352 HEXFET Power MOSFET dvanced Process Technoogy Surface Mount (IRF530NS) Low-profie through-hoe (IRF530NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated G D S V DSS =V R DS(on) =
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PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
More informationV DSS R DS(on) max Qg 30V GS = 10V 9.3nC
IRFH792PbF Appications High Frequency Point-of-Load Synchronous Buck Converter for Appications in Neworking & Computing Systems Optimized for Contro FET Appications HEXFET Power MOSFET V DSS R DS(on) max
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
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PD- 937C IRLR/U2705 HEXFET Power MOSFET Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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