IRFR3411PbF IRFU3411PbF
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- Brian Lucas Newman
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1 Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G IRFR3411PbF IRFU3411PbF HEXFET Power MOSFET D S PD B V DSS = V R DS(on) = 44mΩ I D = 32A The D-Pak is designed for surface mounting using vapor phase, infrared, or wave sodering techniques. The straight ead, I-Pak, version (IRFU series) is for throughhoe mounting appications. Power dissipation eves up to 1.5 watts are possibe in typica surface mount appications. Absoute Maximum Ratings D-Pak IRFR3411PbF I-Pak IRFU3411PbF Parameter Max. Units I T C = 25 C Continuous Drain V 32 I T C = C Continuous Drain V 23 A I DM Pused Drain Current 1 P C = 25 C Power Dissipation 130 W Linear Derating Factor 0.83 W/ C Gate-to-Source Votage ± 20 V I AR Avaanche Current 16 A E AR Repetitive Avaanche Energy 13 mj dv/dt Peak Diode Recovery dv/dt ƒ 7.0 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range Sodering Temperature, for seconds 300 (1.6mm from case ) C Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.2 R θja Junction-to-Ambient (PCB mount)* 50 C/W R θja Junction-to-Ambient /16/
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage V = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.12 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance mω = V, I D = 16A (th) Gate Threshod Votage V V DS =, I D = 250µA g fs Forward Transconductance 21 S V DS = 50V, I D = 16A I DSS Drain-to-Source Leakage Current 25 V µa DS = V, = 0V 250 V DS = 80V, = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage = 20V na Gate-to-Source Reverse Leakage - = -20V Q g Tota Gate Charge I D = 16A Q gs Gate-to-Source Charge nc V DS = 80V Q gd Gate-to-Drain ("Mier") Charge = V, See Fig. 6 and 13 t d(on) Turn-On Deay Time 11 V DD = 50V t r Rise Time 35 I D = 16A ns t d(off) Turn-Off Deay Time 39 R G = 5.1Ω t f Fa Time 35 = V, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 1960 = 0V C oss Output Capacitance 250 V DS = 25V C rss Reverse Transfer Capacitance 40 pf ƒ = 1.0MHz, See Fig. 5 E AS Singe Puse Avaanche Energy mj I AS = 16A, L = 1.5mH D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 33 (Body Diode) showing the A G I SM Pused Source Current integra reverse 1 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.2 V T J = 25 C, I S = 16A, = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 16A Q rr Reverse Recovery Charge nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. (See fig. 11) Starting T J = 25 C, L =1.5mH R G = 25Ω, I AS = 16A. (See Figure 12) ƒ I SD 16A, di/dt 340A/µs, V DD V (BR)DSS, T J 175 C. Puse width 400µs; duty cyce 2%. This is a typica vaue at device destruction and represents operation outside rated imits. This is a cacuated vaue imited to T J = 175 C. * When mounted on 1" square PCB (FR-4 or G- Materia). For recommended footprint dering techniques refer to appication note #AN
3 I D, Drain-to-Source Current (A) VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH 1 T J = 25 C V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH 1 T J = 175 C V DS, Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) T J = 25 C T J = 175 C V DS= 50V 20µs PULSE WIDTH , Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 3.5 I D = 33A = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 I D, Drain-to-Source Current (A) C, Capacitance (pf) 3000 VGS = 0V, f = 1MHz Ciss = Cgs Cgd, C ds SHORTED C = 2500 rss Cgd Coss = Cds Cgd C 2000 iss 1500 C oss 500 C rss 0 1 V DS, Drain-to-Source Votage (V), Gate-to-Source Votage (V) I = D 16A V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) 1 T J = 175 C T J = 25 C = 0 V V SD,Source-to-Drain Votage (V) T A = 25 C T J = 175 C Singe Puse OPERATION IN THIS AREA LIMITED BY R DS (on) µsec 1msec msec 1 V DS, Drain-toSource Votage (V) Fig 7. Typica Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Votage 4
5 35 V DS R D R G D.U.T. - V DD I D, Drain Current (A) T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature V DS 90% Puse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Therma Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C t 1, Rectanguar Puse Duration (sec) Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
6 15V V DS L DRIVER R G D.U.T IAS - V DD A 20V tp 0.01Ω Fig 12a. Uncamped Inductive Test Circuit V (BR)DSS tp E AS, Singe Puse Avaanche Energy (mj) I D TOP 6.5A 11.3A BOTTOM 16A Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 12b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF Q GS Q GD D.U.T. V - DS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 13b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD * Reverse Poarity of D.U.T for P-Channe Driver Gate Drive Period P.W. D = P.W. Period [ =V ] *** D.U.T. I SD Waveform Reverse Recovery Current Re-Appied Votage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 14. For N-channe HEXFET power MOSFETs 7
8 D-Pak (TO-252AA) Package Outine Dimensions are shown in miimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" Note: "P" in assemby ine position indicates "Lead-Free" "P" in assemby ine position indicates "Lead-F ree" quaification to the cons umer-eve INTERNATIONAL RECTIFIER LOGO AS S E MBLY LOT CODE IRFR A PART NUMBER DATE CODE YEAR 1 = 2001 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE IRFR PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 2001 WEEK 16 A = ASSEMBLY SITE CODE Notes: 1. For an Automotive Quaified version of this part pease seehttp:// 2. For the most current drawing pease refer to IR website at 8
9 I-Pak (TO-251AA) Package Outine Dimensions are shown in miimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "A" Note: "P" in assemby ine position indicates Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE IRFU A PART NUMBER DATE CODE YEAR 1 = 2001 WEEK 19 LINE A OR INT ERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 1 = 2001 WEEK 19 A = ASSEMBLY SITE CODE Notes: 1. For an Automotive Quaified version of this part pease seehttp:// 2. For the most current drawing pease refer to IR website at 9
10 D-Pak (TO-252AA) Tape & Ree Information Dimensions are shown in miimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Data and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information.09/20
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg 30V GS = 10V 9.3nC
IRFH792PbF Appications High Frequency Point-of-Load Synchronous Buck Converter for Appications in Neworking & Computing Systems Optimized for Contro FET Appications HEXFET Power MOSFET V DSS R DS(on) max
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PD- 937C IRLR/U2705 HEXFET Power MOSFET Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
More informationIRF9520N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.48Ω I D = -6.8A
Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationIRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A
PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9888 IRL5602S HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature PChanne Fast Switching Fuy Avaanche Rated G D S V DSS = 20V R DS(on) = 0.042W I D = 24A Description
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
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PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
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PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationLinear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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HEXFET Power MOSFET Dynamic dv/dt Rating Current Sense 175 C Operating Temperature Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation HEXFETs from Internationa Rectifier
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l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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PD - 91368B IRFL4310 HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paraeing Advanced Process Technoogy Utra Low On-Resistance Description Fifth Generation HEXFETs from Internationa
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
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Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
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PD - 95093A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00%
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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