SMPS MOSFET. V DSS R DS(on) max I D

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1 Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive appications, these HEXFET Power MOSFET's in SO-8 package utiize the astest processing techniques to achieve extremey ow onresistance per siicon area. Additiona features of these Automotive quaified HEXFET Power MOSFET's are a 50 C junction operating temperature, fast switching speed and improved repetitive avaanche rating. These benefits combine to make this design an extremey efficient and reiabe device for use in Automotive appications and a wide variety of other appications. The efficient SO-8 package provides enhanced therma characteristics making it idea in a variety of power appications. This surface mount SO-8 can dramaticay reduce board space and is aso avaiabe in Tape & Ree. SMPS MOSFET IRF7452QPbF HEXFET Power MOSFET V SS R S(on) max I V 0.060Ω 4.5A Top View SO-8 Absoute Maximum Ratings Parameter Max. Units T A = 25 C Continuous rain Current, V 0V 4.5 T A = 70 C Continuous rain Current, V 0V 3.6 A I M Pused rain Current 36 A = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Votage ± 30 V dv/dt Peak iode Recovery dv/dt ƒ 3.5 V/ns T J Operating Junction and -55 to 50 T STG Storage Temperature Range Sodering Temperature, for 0 seconds 300 (.6mm from case ) C S S S G A P Typica SMPS Topoogies Teecom 48V input C-C with Haf Bridge Primary or atacom 28V input with Passive Reset Forward Converter Primary Notes through are on page /23/07

2 T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage V V GS = 0V, I = 250µA V (BR)SS / T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance Ω V GS = 0V, I = 2.7A V GS(th) Gate Threshod Votage V V S = V GS, I = 250µA I SS rain-to-source Leakage Current 25 V µa S = V, V GS = 0V 250 V S = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage V GS = 24V na Gate-to-Source Reverse Leakage - V GS = -24V T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 3.4 S V S = 50V, I = 2.7A Q g Tota Gate Charge I = 2.7A Q gs Gate-to-Source Charge 7.3 nc V S = 80V Q gd Gate-to-rain ("Mier") Charge 6 24 V GS = 0V, t d(on) Turn-On eay Time 9.5 V = 50V t r Rise Time ns I = 2.7A t d(off) Turn-Off eay Time 6 R G = 6.0Ω t f Fa Time 3 V GS = 0V C iss Input Capacitance 930 V GS = 0V C oss Output Capacitance 300 V S = 25V C rss Reverse Transfer Capacitance 84 pf ƒ =.0MHz C oss Output Capacitance 370 V GS = 0V, V S =.0V, ƒ =.0MHz C oss Output Capacitance 70 V GS = 0V, V S = 80V, ƒ =.0MHz C oss eff. Effective Output Capacitance 280 V GS = 0V, V S = 0V to 80V Avaanche Characteristics Parameter Typ. Max. Units E AS Singe Puse Avaanche Energy 200 mj I AR Avaanche Current 4.5 A E AR Repetitive Avaanche Energy 0.25 mj Therma Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambient 50 C/W iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.3 (Body iode) showing the A G I SM Pused Source Current integra reverse 36 (Body iode) p-n junction diode. S V S iode Forward Votage.3 V T J = 25 C, I S = 2.7A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 2.7A Q rr Reverse RecoveryCharge nc di/dt = A/µs 2

3 I, rain-to-source Current (A) 0 0. VGS TOP 5V 2V 0V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 5.0V 20µs PULSE WITH 0.0 T J = 25 C 0. 0 V S, rain-to-source Votage (V) I, rain-to-source Current (A) 0 VGS TOP 5V 2V 0V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 5.0V 20µs PULSE WITH T J = 50 C V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current (A) 0 T J = 50 C T J = 25 C V S= 50V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.5 I = 4.5A V GS = 0V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRF7452QPbF V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd Ciss Coss Crss 0 V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) I = 2.7A V S = 80V V S = 50V V S = 20V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Votage (V) I, rain Current (A) 0 0 OPERATION IN THIS AREA LIMITE BY R S(on) 0us us ms 0ms TA = 25 C TJ = 50 C Singe Puse V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 5.0 V S R I, rain Current (A) T C, Case Temperature ( C) Fig 0a. Switching Time Test Circuit V S 90% R G V GS 0V Puse Width µs uty Factor 0. %.U.T. 0% V GS t d(on) t r t d(off) t f - V Fig 0b. Switching Time Waveforms Therma Response (Z thja ) 0 0. = SINGLE PULSE (THERMAL RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thja TA t, Rectanguar Puse uration (sec) PM t t2 Fig 0. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5

6 R S (on), rain-to-source On Resistance (Ω) IRF7452QPbF 0.06 R S(on), rain-to -Source On Resistance (Ω) 0.08 V GS = 0V V GS = 5V 0.06 I = 2.7A I, rain Current (A) V GS, Gate -to -Source Votage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Votage Current Reguator Same Type as.u.t. 2V I AS V GS.2µF 50KΩ 3mA.3µF.U.T. I G I Current Samping Resistors V - S V GS Fig 3a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)SS R G V S 20V V G tp Q GS L.U.T I AS 0.0Ω Q G Q G Charge 5V RIVER - V A E AS, Singe Puse Avaanche Energy (mj) TOP BOTTOM I 2.0A 3.6A 4.5A Starting T, Junction Temperature ( J C) Fig 4a&b. Uncamped Inductive Test circuit Fig 4c. Maximum Avaanche Energy and Waveforms Vs. rain Current 6

7 SO-8 Package Outine imensions are shown in miimeters (inches) ( ; H ' % >@,&(6 0,//,0(7(56 ',0 0, 0; 0, 0; E F ' ( H H. / \ %6,& %6,& %6,& ƒ ƒ %6,& ƒ ƒ H.[ƒ & \ ;E >@ ;/ ;F >@ & % 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,20,//,0(7(5 ',0(6,265(62:,0,//,0(7(56>,&(6@ 287/,(&2) ('(&287/,(06 ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67(/(*72)/(')2562/'(5,*72 68%6757( >@ )22735,7 ;>@ SO-8 Part Marking (;03/(7,6,6,5)026)(7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; ;>@ ;>@ '7(&2'(<:: 3 '(6,*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 Note: For the most current drawing pease refer to IR website at 7

8 SO-8 Tape and Ree imensions are shown in miimeters (inches) TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 20mH R G = 25Ω, I AS = 4.5A. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) ƒ Puse width 400µs; duty cyce 2%. When mounted on inch square copper board, t<0 sec Note: For the most current drawing pease refer to IR website at ata and specifications subject to change without notice. This product has been designed and quaified for the Automotive [Q0] market. Quaification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (30) TAC Fax: (30) Visit us at for saes contact information.07/