Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
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1 dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G P IRFINPbF S HEXFET Power MOSFET V SS = 55V R S(on) = 0.012Ω I = 49 The TO-220 Fupak eiminates the need for additiona insuating hardware in commercia-industria appications. The mouding compound used provides a high isoation capabiity and a ow therma resistance between the tab TO-220 FULLPK and externa heatsink. This isoation is equivaent to using a 0 micron mica barrier with standard TO-220 product. The Fupak is mounted to a heatsink using a singe cip or by a singe screw fixing. bsoute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 49 T C = 0 C Continuous rain Current, V V 35 I M Pused rain Current 290 C = 25 C Power issipation 58 W Linear erating Factor 0.38 W/ C V GS Gate-to-Source Votage ± 20 V E S Singe Puse vaanche Energy 360 mj I R vaanche Current 43 E R Repetitive vaanche Energy 5.8 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and-55 to 175 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew bf in (1.1N m) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 2.6 R θj Junction-to-mbient 65 C/W 06/16/04
2 IRFINPbF Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 55 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.06 V/ C Reference to 25 C, I = 1m R S(on) Static rain-to-source On-Resistance Ω V GS = V, I = 26 V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance 30 S V S = 25V, I = 43 I SS rain-to-source Leakage Current 25 V µ S = 55V, V GS = 0V 250 V S = 44V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V n Gate-to-Source Reverse Leakage -0 V GS = -20V Q g Tota Gate Charge 130 I = 43 Q gs Gate-to-Source Charge 23 nc V S = 44V Q gd Gate-to-rain ("Mier") Charge 53 V GS = V, See Fig. 6 and 13 t d(on) Turn-On eay Time 11 V = 28V t r Rise Time 66 I = 43 ns t d(off) Turn-Off eay Time 40 R G = 3.6Ω t f Fa Time 46 R = 0.62Ω, See Fig. Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 2900 V GS = 0V C oss Output Capacitance 880 pf V S = 25V C rss Reverse Transfer Capacitance 330 ƒ = 1.0MHz, See Fig. 5 C rain to Sink Capacitance 12 ƒ = 1.0MHz S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 49 (Body iode) showing the G I SM Pused Source Current integra reverse 290 (Body iode) p-n junction diode. V S iode Forward Votage 1.3 V T J = 25 C, I S = 26, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 43 Q rr Reverse RecoveryCharge nc di/dt = 0/µs S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11 ) V = 25V, starting T J = 25 C, L = 390µH R G = 25Ω, I S = 43. (See Figure 12) ƒ I S 43, di/dt 260/µs, V V (BR)SS, T J 175 C Puse width 300µs; duty cyce 2%. t=60s, ƒ=60hz Uses IRFN data and test conditions
3 IRFINPbF I, rain-to-source Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I, rain-to-source Current () 0 VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 4.5V 20µs PULSE WITH T C = 25 C V S, rain-to-source Votage (V) Fig 1. Typica Output Characteristics 20µs PULSE WITH T C = 175 C V S, rain-to-source Votage (V) Fig 2. Typica Output Characteristics I, rain-to-source Current () 0 T = 25 C J T = 175 C J V S= 25V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) I = 72 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature
4 IRFINPbF C, Capacitance (pf) V GS = 0V, f = 1MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C iss C oss = C ds Cgd C oss Crss V, Gate-to-Source Votage (V) GS I = 43 V S = 44V V S = 28V V S, rain-to-source Votage (V) 0 FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0 T = 175 C J T = 25 C J V GS = 0V V S, Source-to-rain Votage (V) I, rain Current () OPERTION IN THIS RE LIMITE BY RS(on) µs 0 0µs 1ms ms T C = 25 C T J = 175 C Singe Puse V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea
5 IRFINPbF 50 V S R 40 R G V GS.U.T. - V I, rain Current () Fig a. Switching Time Test Circuit V S 90% V Puse Width 1 µs uty Factor 0.1 % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response (Z thjc ) = t2 SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J= P M x Z thjc TC t 1, Rectanguar Puse uration (sec) PM t1 Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case
6 IRFINPbF 15V V S L RIVER R G.U.T I S - V 20V tp 0.01Ω Fig 12a. Uncamped Inductive Test Circuit V (BR)SS tp E S, Singe Puse vaanche Energy (mj) TOP BOTTOM I V = 25V Starting T J, Junction Temperature ( C) Fig 12c. Maximum vaanche Energy Vs. rain Current I S Fig 12b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. 50KΩ Q G 12V.2µF.3µF V Q GS Q G.U.T. V - S V GS V G 3m Charge Fig 13a. Basic Gate Charge Waveform I G I Current Samping Resistors Fig 13b. Gate Charge Test Circuit
7 IRFINPbF Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 14. For N-Channe HEXFETS
8 IRFINPbF TO-220 Fu-Pak Package Outine imensions are shown in miimeters (inches) TO-220 Fu-Pak Part Marking Information E XMPLE : T HIS IS N IRF I840G WITH SSEMBLY LOT COE 3432 S S EMB LE ON WW IN THE SSEMBLY LINE "K" Note: "P" in assemby ine position indicates "Lead-Free" INT E R NT IONL R E CT IF IE R LOGO S S E MB L Y LOT COE IRFI840G 924K PRT NUMBER T E COE YER 9 = 1999 WE E K 24 LINE K ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information. 06/04
9 Note: For the most current drawings pease refer to the IR website at:
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
More informationIRF9520N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.48Ω I D = -6.8A
Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Logic-Leve Gate Drive dvanced Process Technoogy Surface Mount (IRL3303S) Low-profie through-hoe (IRL3303L) 75 C Operating Temperature Fast Switching Fuy vaanche Rated Description PD - 9.323B IRL3303S/L
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HEXFET Power MOSFET Dynamic dv/dt Rating Current Sense 175 C Operating Temperature Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation HEXFETs from Internationa Rectifier
More informationIRL3803 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.006Ω I D = 120A PRELIMINARY. Description. Absolute Maximum Ratings
l Logic-Level Gate rive l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs
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l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
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P- 94087 IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V -6.2 70@V GS = -4.5V -5.0 escription
More informationIRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance
l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
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l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
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Features Advanced Process Technoogy Utra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utiizes the atest
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PD 9888 IRL5602S HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature PChanne Fast Switching Fuy Avaanche Rated G D S V DSS = 20V R DS(on) = 0.042W I D = 24A Description
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HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P- 95253 IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V -0.5 0.025@V GS = -4.5V
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l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
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l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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PD - 90861B IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
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l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
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HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 8 S l ual N-Channel Mosfet 2 7 l Surface Mount G l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
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l l l l l Surface Mount (IRFR20N) Straight Lead (IRFU20N) dvanced Process Technology Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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