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1 dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF HEXFET Power MOSFET P 9624 V SS = 30V R S(on) = 0.02Ω escription These HEXFET Power MOSFET's in package utiize the astest processing techniques to achieve extremey ow onresistance per siicon area. dditiona features of these HEXFET Power MOSFET's are a 50 C junction operating temperature, fast switching speed and improved repetitive avaanche rating. These benefits combine to make this design an extremey efficient and reiabe device for use in a wide variety of appications. The efficient SO8 package provides enhanced therma characteristics making it idea in a variety of power appications. This surface mount SO8 can dramaticay reduce board space and is aso avaiabe in Tape & Ree. Top View SO8 bsoute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V 0V 0 T = 70 C Continuous rain Current, V 0V 7. I M Pused rain Current 45 = 25 C Power issipation 2.5 W Linear erating Factor 0.02 mw/ C V GS GatetoSource Votage ± 20 V E S Singe Puse vaanche Energy 370 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Therma Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junctiontombient 50 C/W 08/09/0
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 30 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance V GS = 0V, I = 5.6 Ω V GS = 4.5V, I = 2.8 V GS(th) Gate Threshod Votage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 5.6 S V S = 0V, I = 2.8 I SS raintosource Leakage Current.0 V S = 24V, V GS = 0V µ 25 V S = 24V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 00 V GS = 20V n GatetoSource Reverse Leakage 00 V GS = 20V Q g Tota Gate Charge 6 92 I = 5.6 Q gs GatetoSource Charge nc V S = 24V Q gd Gatetorain ("Mier") Charge V GS = 0V, See Fig. 6 and 9 t d(on) TurnOn eay Time 8 V = 5V t r Rise Time 49 I = 5.6 ns t d(off) TurnOff eay Time 59 R G = 6.2Ω t f Fa Time 60 R = 2.7Ω, See Fig. 0 C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 890 pf V S = 25V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 3. (Body iode) showing the I SM Pused Source Current integra reverse 45 (Body iode) pn junction diode. V S iode Forward Votage.0 V T J = 25 C, I S = 5.6, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 5.6 Q rr Reverse RecoveryCharge nc di/dt = 00/µs ƒ G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 25mH R G = 25Ω, I S = 5.6. (See Figure 2) ƒ I S 5.6, di/dt 00/µs, V V (BR)SS, T J 50 C Puse width 300µs; duty cyce 2%. Surface mounted on FR4 board, t 0sec. 2
3 I, raintosource Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V I, raintosource Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WITH T J = 25 C 0. 0 V S, raintosource Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, raintosource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, raintosource Current () 00 0 T J = 25 C T J = 50 C V S = 0V 20µs PULSE WITH V, GatetoSource Votage (V) GS R S(on), raintosource On Resistance (Normaized) I = 5.6 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature 3
4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd C iss C oss C rss V S, raintosource Votage (V) Fig 5. Typica Capacitance Vs. raintosource Votage V GS, GatetoSource Votage (V) I = 5.6 V S = 24V V S = 5V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 6. Typica Gate Charge Vs. GatetoSource Votage I S, Reverse rain Current () 00 T J = 50 C 0 T J = 25 C V GS = 0V V S, Sourcetorain Votage (V) I I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00us ms T = 25 C 0ms TJ = 50 C Singe Puse V S, raintosource Votage (V) Fig 7. Typica Sourcerain iode Fig 8. Maximum Safe Operating rea Forward Votage 4
5 V S R Q G 0V Q GS Q G R G V GS.U.T. V V G Charge Fig 9a. Basic Gate Charge Waveform 0V Puse Width µs uty Factor 0. % Fig 0a. Switching Time Test Circuit Current Reguator Same Type as.u.t. 2V.2µF 50KΩ.3µF V GS t d(on) t r t d(off) t f 0%.U.T. V S V GS 3m I G I Current Samping Resistors 90% V S Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 Therma Response (Z thj ) 0 = SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectanguar Puse uration (sec) PM t Fig. Maximum Effective Transient Therma Impedance, Junctiontombient 5
6 Fig 2a. Uncamped Inductive Test Circuit I S V S L R G.U.T V IS 20V RIVER tp 0.0Ω 5V E S, Singe Puse vaanche Energy (mj) I TOP BOTTOM Starting T, Junction Temperature ( o J C) Fig 2c. Maximum vaanche Energy Vs. rain Current tp V (BR)SS Fig 2b. Uncamped Inductive Waveforms 6
7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controed by R G I S controed by uty Factor "".U.T. evice Under Test * V * Reverse Poarity for PChanne ** Use PChanne river for PChanne Measurements river Gate rive Period P.W. = P.W. Period [ V GS =0V] ***.U.T. I S Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop V [ ] [ I S ] *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3. For PChanne HEXFETS 7
8 SO8 Package Outine imensions are shown in miimeters (inches) E 6 6X e B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. 8X L [.255] 3X.27 [.050] 8X c FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] SO8 Part Marking EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 T E COE (YWW) P = E S IGNT E S L E F RE E PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER Notes:. For an utomotive Quaified version of this part pease see 2. For the most current drawing pease refer to IR website at 8
9 SO8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (30) TC Fax: (30) Visit us at for saes contact information.08/
1 Top View
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More informationV DSS R DS(on) max I D. 30V GS = 10V 13A. 100 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems 8 S 2 7 S
More informationIRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
EN: This Datasheet is presented by the m anufacturer. Pease v isit our website for pricing and avaiabiity at www.hest ore.hu. Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationHEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.045Ω I D = 3.9A
Surface Mount Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fuy Avaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationHEXFET Power MOSFET V DSS = 100V. R DS(on) = 23mΩ I D = 57A
Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationIRFZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 17.5mΩ I D = 49A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationV DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Appications High frequency DC-DC converters Pasma Dispay Pane Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design, (See
More informationIRF9530N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.20Ω I D = -14A
dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
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Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationIRLL3303. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.031Ω I D = 4.6A SOT-223. Thermal Resistance PD C
l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationIRF1404SPbF IRF1404LPbF HEXFET Power MOSFET
Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Seventh Generation HEXFET Power MOSFETs from Internationa
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technoogy Surface Mount (IRFZ44ES) Low-profie through-hoe (IRFZ44EL) 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free S Description Fifth Generation HEXFETs from
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationPRELIMINARY. Symbol Maximum Units N-Channel P-Channel Drain-Source Voltage V DS Gate-Source Voltage V GS ± 20 T A = 25 C 2.
l l l l l Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET Surface Mount Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing
More informationIRLL014N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.14Ω I D = 2.0A SOT-223
Surface Mount dvanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationIRLMS6702. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.20Ω. Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET
P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier
More informationSMPS MOSFET. Symbol Parameter Max. Units
P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
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SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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PD- 937C IRLR/U2705 HEXFET Power MOSFET Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Surface Mount (IRF9Z34NS) l Lowprofile throughhole (IRF9Z34NL) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription G P 9.1525 IRF9Z34NS/L
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationHEXFET Power MOSFET V DS -20 V V GS max ±12 V. Top View. Orderable part number Package Type Standard Pack. IRLTS2242TRPbF TSOP-6 Tape and Reel 3000
P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
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P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationIRF9520N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.48Ω I D = -6.8A
Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
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