Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
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1 P B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET V SS = 30V R S(on) = 0.029Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. Top View The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. SO-8 bsoute Maximum Ratings ( T = 25 C Uness Otherwise Noted) Symbo Maximum Units rain-source Votage V S 30 Gate-Source Votage V GS ± 20 V T = 25 C 6.5 Continuous rain Current I T = 70 C 5.2 Pused rain Current I M 30 Continuous Source Current (iode Conduction) I S 2.5 Maximum Power issipation T = 25 C 2.0 P T = 70 C.3 W Singe Puse vaanche Energy E S 82 mj vaanche Current I R 4.0 Repetitive vaanche Energy E R 0.20 mj Peak iode Recovery dv/dt ƒ dv/dt 5.8 V/ ns Junction and Storage Temperature Range T J, T STG -55 to + 50 C Therma Resistance Ratings Parameter Symbo Limit Units Maximum Junction-to-mbient R θj 62.5 C/W 9/2/02
2 IRF733 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 30 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m V GS = 0V, I = 5.8 R S(on) Static rain-to-source On-Resistance Ω V GS = 4.5V, I = 4.7 V GS(th) Gate Threshod Votage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 4 S V S = 5V, I = 5.8 I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µ 25 V S = 24V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage 00 V GS = 20V n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Tota Gate Charge I = 5.8 Q gs Gate-to-Source Charge nc V S = 5V Q gd Gate-to-rain ("Mier") Charge V GS = 0V, See Fig. 0 t d(on) Turn-On eay Time 8. 2 V = 5V t r Rise Time I =.0 ns t d(off) Turn-Off eay Time R G = 6.0Ω t f Fa Time 726 R = 5Ω C iss Input Capacitance 650 V GS = 0V C oss Output Capacitance 320 pf V S = 25V C rss Reverse Transfer Capacitance 30 ƒ =.0MHz, See Fig. 9 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.5 (Body iode) showing the I SM Pused Source Current integra reverse G 30 (Body iode) p-n junction diode. V S iode Forward Votage V T J = 25 C, I S =.7, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F =.7 Q rr Reverse RecoveryCharge 58 87nC di/dt = 00/µs ƒ S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 0mH R G = 25Ω, I S = 4.0. ƒ I S 4.0, di/dt 74/µs, V V (BR)SS, T J 50 C Puse width 300µs; duty cyce 2%. Surface mounted on FR-4 board, t 0sec.
3 IRF733 I, rain-to-source Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V I, rain-to-source Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics VS I, rain-to-source Current () 0 T J = 25 C T = 50 C J V S = 0V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) I S, Reverse rain Current () T J = 50 C 0 T J = 25 C V GS = 0V V S, Source-to-rain Votage (V) Fig 3. Typica Transfer Characteristics Fig 4. Typica Source-rain iode Forward Votage
4 IRF733 R S(on), rain-to-source On Resistance (Normaized) 2.0 I = V GS= 0V T J, Junction Temperature ( C) RS (on), rain-to-source On Resistance (Ω) V = 4.5V GS V GS = 0V I, rain Current () Fig 5. Normaized On-Resistance Vs. Temperature Fig 6. Typica On-Resistance Vs. rain Current RS (on), rain-to-source On Resistance (Ω) V GS I = 5.8, Gate-to-Source Votage (V) E S, Singe Puse vaanche Energy (mj) I TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 7. Typica On-Resistance Vs. Gate Votage Fig 8. Maximum vaanche Energy Vs. rain Current
5 IRF733 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss Crss V GS, Gate-to-Source Votage (V) I = 5.8 V S = 5V V S, rain-to-source Votage (V) Q G, Tota Gate Charge (nc) Fig 9. Typica Capacitance Vs. rain-to-source Votage Fig 0. Typica Gate Charge Vs. Gate-to-Source Votage 00 Therma Response (Z thj ) Notes: SINGLE PULSE (THERML RESPONSE). uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient
6 IRF733 Package Outine SO8 Outine 5 E B H 0.25 (.00) M M e 6X e K x 45 θ - C (.004) L 6 C B 8X 8X 8X 0.25 (.00) M C S B S NOTES:. IMENSIONING N TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. IM INCHES MILLIMETERS MIN MX MIN MX B C E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X Part Marking Information SO8 EXMPLE : THIS IS N IRF70 INTERNTIONL RECTIFIER LOGO F70 TOP 32 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK WFER LOT COE PRT NUMBER (LST 4 IGITS) XXXX BOTTOM
7 Tape & Ree Information SO8 imensions are shown in miimeters (inches) IRF733 TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 007 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #0-02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 9/02
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l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
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l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationIRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A
HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
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Utra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Lead-Free Description G IRFR3303PbF IRFU3303PbF HEXFET Power MOSFET
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationIRF9520N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.48Ω I D = -6.8A
Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
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Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
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l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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HEXFET Power MOSFET PD - 9.235 IRLI620G Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive R DS(ON) Specified at V GS = 4V & 5V Fast Switching Ease
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l dvanced Process Technology l Surface Mount (IRF9Z34NS) l Lowprofile throughhole (IRF9Z34NL) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription G P 9.1525 IRF9Z34NS/L
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
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l l l l l dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
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SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
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