Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
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1 Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications G P IRLML2402 HEXFET Power MOSFET V SS = 20V R S(on) = 0 25Ω customized eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industrys smaest footprint This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium The ow profie ( mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards Micro3 bsoute Maximum Ratings Parameter Max Units T = 25 C Continuous rain Current, V 4 5V 2 T = 70 C Continuous rain Current, V 4 5V 0 95 I M Pused rain Current 7 4 = 25 C Power issipation 540 mw Linear erating Factor 4 3 mw/ C V GS Gate-to-Source Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5 0 V/ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ Max Units R θj Maximum Junction-to-mbient 230 C/W 0/5/03
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min Typ Max Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0 25 V GS = 4 5V, I = 0 93 ƒ Ω 0 35 V GS = 2 7V, I = 0 47 ƒ V GS(th) Gate Threshod Votage 0 70 V V S = V GS, I = 250µ g fs Forward Transconductance 3 S V S = V, I = 0 47 I SS rain-to-source Leakage Current 0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V n Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge I = 0 93 Q gs Gate-to-Source Charge nc V S = 6V Q gd Gate-to-rain ("Mier") Charge 7 V GS = 4 5V, See Fig 6 and 9 ƒ t d(on) Turn-On eay Time 2 5 V = V t r Rise Time 9 5 I = 0 93 ns t d(off) Turn-Off eay Time 9 7 R G = 6 2Ω t f Fa Time 4 8 R = Ω, See Fig ƒ C iss Input Capacitance V GS = 0V C oss Output Capacitance 5 pf V S = 5V C rss Reverse Transfer Capacitance 25 ƒ = 0MHz, See Fig 5 Source-rain Ratings and Characteristics Parameter Min Typ Max Units Conditions I S Continuous Source Current MOSFET symbo 0 54 (Body iode) showing the I SM Pused Source Current integra reverse 7 4 (Body iode) p-n junction diode V S iode Forward Votage 2 V T J = 25 C, I S = 0 93, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 0 93 Q rr Reverse RecoveryCharge 6 24 nc di/dt = 0/µs ƒ G S Notes: Repetitive rating; puse width imited by max junction temperature ( See fig ) I S 0 93, di/dt 90/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2 Surface mounted on FR-4 board, t 5sec
3 I, rain-to-source Current () 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH 0.0 T J = 25 C V S, rain-to-source Votage (V) I, rain-to-source Current () 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH 0.0 T J = 50 C V S, rain-to-source Votage (V) Fig Typica Output Characteristics Fig 2 Typica Output Characteristics I, rain-to-source Current () T J = 25 C T = 50 C J V S = V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) I = 0.93 V GS = 4.5V T J, Junction Temperature ( C) Fig 3 Typica Transfer Characteristics Fig 4 Normaized On-Resistance Vs Temperature
4 C, Capacitance (pf) 200 V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd 60 C oss = C ds + Cgd C iss 20 Coss 80 C rss V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) I = 0.93 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5 Typica Capacitance Vs rain-to-source Votage Fig 6 Typica Gate Charge Vs Gate-to-Source Votage I S, Reverse rain Current () T J = 50 C T J = 25 C I, rain Current () 0 OPERTION IN THIS RE LIMITE BY RS(on) 0µs ms T = 25 C ms T J = 50 C V GS = 0V 0.0 Singe Puse V S, Source-to-rain Votage (V) V S, rain-to-source Votage (V) Fig 7 Typica Source-rain iode Forward Votage Fig 8 Maximum Safe Operating rea
5 Q G V S R 4 5V Q GS Q G R G V GS U T + - V V G 4 5V Charge Puse Width µs uty Factor Fig 9a Basic Gate Charge Waveform Current Reguator Same Type as.u.t. Fig a Switching Time Test Circuit V S 2V.2µF 50KΩ.3µF 90.U.T. + V - S V GS V GS t d(on) t r t d(off) t f 3m I G I Current Samping Resistors Fig 9b Gate Charge Test Circuit Fig b Switching Time Waveforms 00 Therma Response (Z thj ) 0 = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T t, Rectanguar Puse uration (sec) PM t t2 Fig Maximum Effective Transient Therma Impedance, Junction-to-mbient
6 river Gate rive Period P.W. = P.W. Period V GS =V.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5 I S Fig 2 For N-Channe HEXFETS
7 Package Outine Micro3 (SOT-23 / TO-236B) imensions are shown in miimeters (inches) 3 E C - B 3X - B e e 0. (.004) M C S B S 3 LE SSIGNMENTS - GTE 2 - SOURCE 3 - RIN H 0.20 (.008 ) M M (.003) θ L 3X C 3X INCHES MILLIMETERS IM MIN MX MIN MX B C e.0750 BSIC.90 BSIC e.0375 BSIC 0.95 BSIC E H L θ MINIMUM RECOMMENE FOOTPRINT 0.80 (.03 ) 3X 0.90 (.035 ) 3X 2.00 (.079 ) NOTES:. IMENSIONING TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3 IMENSIONS O NOT INCLUE MOL FLSH (.037 ) 2X Part Marking Information Micro3 (SOT-23 / TO-236B) I r )Uuv ƒh h xv tv s h v hƒƒyvr qr vpr ƒ qˆprqirs r!!! (;03/(7+,6,6,5/0/ 35780( (52(5()(5((,5/0/,5/0/,5/0/,5/0/ (,5/0/ ),5/0/ *,5/0/ +,5/0/ 7(2((;03/(6 :: :: () 7( 2( ::,)35(((/67,*,72)/(5(5 (5 (5 ( ) * + -. :25. :((. ::,)35(((/(77(5 :25. :((. : ; = : ; = RWHV7KLVSUWPUNLQJLQIRUPWLRQSSOLHVWRGHYLFHVSURGXFHGIWHU :,)35(((/67,*,72)/(5( ( (52(5()(5((,5/0/,5/0/,5/0/,5/0/ (,5/0/ ),5/0/ *,5/0/ +,5/0/ (5 : :((. /27 2( (5 (5 ( ) * + -. :25. :((. ; = :,)35(((/(77(5 :25. :((. : : ; =
8 Tape Ree Information Micro3 (SOT-23 / TO-236B) imensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEE IRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 EI-54. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information. 0/03
Micro3. 1
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More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
EN: This Datasheet is presented by the m anufacturer. Pease v isit our website for pricing and avaiabiity at www.hest ore.hu. Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C
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HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 8 S l ual N-Channel Mosfet 2 7 l Surface Mount G l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
More informationSMPS MOSFET. Symbol Parameter Max. Units
P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationIRFZ48VS. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 12mΩ I D = 72A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Optimized for SMPS Appications Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationIRFP254N. HEXFET Power MOSFET V DSS = 250V. R DS(on) = 125mΩ I D = 23A
PD 9423 HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Ease of Paraeing Simpe Drive Requirements G D S V DSS = 250V R DS(on)
More informationIRF530N. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 90mΩ I D = 17A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationV DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Appications High frequency DC-DC converters Pasma Dispay Pane Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design, (See
More informationV DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A
PD - 90861B IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Seventh Generation HEXFET Power MOSFETs from Internationa
More informationParameter Typ. Max. Units R qja Junction-to-Amb. (PCB Mount, steady state)* R qja Junction-to-Amb. (PCB Mount, steady state)** 48 60
PD - 91368B IRFL4310 HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paraeing Advanced Process Technoogy Utra Low On-Resistance Description Fifth Generation HEXFETs from Internationa
More informationPRELIMINARY. Symbol Maximum Units N-Channel P-Channel Drain-Source Voltage V DS Gate-Source Voltage V GS ± 20 T A = 25 C 2.
l l l l l Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET Surface Mount Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationSMPS MOSFET. V DSS R DS(on) max I D. l TO-220AB
PD 94208 SMPS MOSFET IRFB42N20D Appications High frequency DCDC converters Motor Contro Uninterrutibe Power Suppies HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 44A Benefits Low GatetoDrain Charge
More informationW Linear Derating Factor 0.016
HEXFET Power MOSFET l Generation V Technology l Ultra Low OnResistance 8 S l ual PChannel Mosfet 2 7 G l Surface Mount l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance
PD - 9352 HEXFET Power MOSFET dvanced Process Technoogy Surface Mount (IRF530NS) Low-profie through-hoe (IRF530NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated G D S V DSS =V R DS(on) =
More informationIRFZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 17.5mΩ I D = 49A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationSMPS MOSFET. V DSS R DS(on) max I D
P- 94036B SMPS MOSFET IRF747 Applications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
More informationLinear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 P- 94243 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω
More informationIRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance
l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
More informationV DSS R DS(on) max I D. 20V GS = 10V 20A. 160 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters in Networking Systems l Lead-Free S S 2 IRF377PbF HEXFET Power MOSFET 8 7 P - 9579
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationIRLL014N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.14Ω I D = 2.0A SOT-223
Surface Mount dvanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
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P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More informationIRLMS6702. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.20Ω. Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET
P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier
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