V DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A

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1 PD B IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation HEXFETs from Internationa Rectifier provide the designer with the best combination of fast switching, ruggedized device design, ow on-resistance and cost-effectiveness. G D S V DSS = 100V R DS(on) = 0.54Ω I D = 1.5A The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave sodering techniques. Its unique package design aows for easy automatic pick-andpace as with other SOT or SOIC packages but has the added advantage of improved therma performance due to an enarged tab for heatsinking. Power dissipation of grreater than 1.25W is possibe in a typica surface mount appication. Absoute Maximum Ratings SOT-223 Parameter Max. Units I Tc = 25 C Continuous Drain Current, V 10 V 1.5 I Tc = 100 C Continuous Drain Current, V 10 V 0.96 I DM Pused Drain Current 12 A P = 25 C Power Dissipation 3.1 P A = 25 C Power Dissipation (PCB Mount)** 2.0 W Linear Derating Factor Linear Derating Factor (PCB Mount)** W/ C V GS Gate-to-Source Votage -/+20 V E AS Singe Puse Avaanche Energy 150 mj I AR Avaanche Current 1.5 A E AR Repetitive Avaanche Energy 0.31 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.5 V/ns T J, T STG Junction and Storage Temperature Range -55 to Sodewring Temperature, for 10 seconds 300 (1.6mm from case) C Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-PCB 40 C/W R θja Junction-to-Ambient. (PCB Mount)** 60 ** When mounted on 1'' square pcb (FR-4 or G-10 Materia). For recommended footprint and sodering techniques refer to appication note #AN /12/06

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 100 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.12 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 0.54 Ω V GS = 10V, I D = 0.90A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 1.1 S V DS = 50V, I D = 0.90A I DSS Drain-to-Source Leakage Current 25 V DS = 100V, V GS = 0V µa 250 V DS = 80V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 100 V GS = 20V na Gate-to-Source Reverse Leakage -100 V GS = -20V Q g Tota Gate Charge 8.3 I D = 5.6A Q gs Gate-to-Source Charge 2.3 nc V DS = 80V Q gd Gate-to-Drain ("Mier") Charge 3.8 V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Deay Time 6.9 V DD = 50V t r Rise Time 16 I D = 5.6A ns t d(off) Turn-Off Deay Time 15 R G = 24 Ω t f Fa Time 9.4 R D = 8.4 Ω, See Fig. 10 L D Interna Drain Inductance 4.0 L S Interna Source Inductance 6.0 nh Between ead, 6mm(0.25in) from package and center of die contact. G D S C iss Input Capacitance 180 V GS = 0V C oss Output Capacitance 81 pf V DS = 25V C rss Reverse Transfer Capacitance 15 ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 1.5 (Body Diode) showing the A I SM Pused Source Current integra reverse 12 (Body Diode) p-n junction diode. V SD Diode Forward Votage 2.5 V T J = 25 C, I S = 1.5A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 5.6A Q rr Reverse RecoveryCharge µc di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S +L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11 ) ƒ I SD 5.6A, di/dt 75A/µs, V DD V (BR)DSS, T J 150 C V DD= 25V, starting T J = 25 C, L = 25 mh R G = 25Ω, I AS = 3.0A (See Figure 12) Puse width 300µs; duty cyce 2%. 2

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7 Package Outine SOT-223 (TO-261AA) Outine IRFL110 Part Marking Information SOT-223 THIS IS AN IRFL014 INT ERNATIONAL PART NUMBER LOT CODE RECTIFIER FL014 LOGO DATE CODE (YYWW) XXXX YY = YEAR WW = WEE K P = DES IGNATES LEAD-FREE TOP PRODUCT (OPTION) BOTTOM 7

8 Tape & Ree Information SOT-223 Outine TR 2.05 (.080) 1.95 (.077) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) (.641) (.619) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION (.475) (.469) 7.10 (.279) 6.90 (.272) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA EACH O (13.00) REEL CONTAINS 2,500 DEVICES (.519) (.504) (.607) (.469) (13.000) MAX (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.566) (.488) (.724) MAX. 4 IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (310) TAC Fax: (310) Visit us at for saes contact information. 04/06 8