Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units

Transcription

1 HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. G S P IRFZ24NPbF V SS = 55V R S(on) = 0 07Ω I = 7 The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. bsolute Maximum Ratings TO-220B Parameter Max Units T C = 25 C Continuous rain Current, V 0V 7 T C = 00 C Continuous rain Current, V 0V 2 I M Pulsed rain Current # 68 C = 25 C Power issipation 45 W Linear erating Factor 0 30 W/ C V GS Gate-to-Source Voltage ±20 V E S Single Pulse valanche Energy 7 mj I R valanche Current 0 E R Repetitive valanche Energy 4 5mJ dv/dt Peak iode Recovery dv/dt ƒ 5 0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 ( 6mm from case) Mounting torque, 6-32 or M3 screw 0 lbf in ( N m) Thermal Resistance Parameter Min Typ Max Units R θjc Junction-to-Case 3 3 R θcs Case-to-Sink, Flat, Greased Surface 0 50 C/W R θj Junction-to-mbient /0/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min Typ Max Units Conditions V (BR)SS rain-to-source Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0 07 Ω V GS = 0V, I = 0 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 4 5 S V S = 25V, I = 0 I SS rain-to-source Leakage Current 25V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 20V n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Total Gate Charge 20 I = 0 Q gs Gate-to-Source Charge 5 3 nc V S = 44V Q gd Gate-to-rain ("Miller") Charge 7 6 V GS = 0V, See Fig 6 and 3 t d(on) Turn-On elay Time 4 9 V = 28V t r Rise Time 34 I = 0 ns t d(off) Turn-Off elay Time 9 R G = 24Ω t f Fall Time 27 R = 2 6Ω, See Fig 0 Between lead, L Internal rain Inductance 4 5 6mm (0 25in ) nh from package L S Internal Source Inductance 7 5 and center of die contact C iss Input Capacitance 370 V GS = 0V C oss Output Capacitance 40 pf V S = 25V C rss Reverse Transfer Capacitance 65 ƒ = 0MHz, See Fig 5 G S Source-rain Ratings and Characteristics Parameter Min Typ Max Units Conditions I S Continuous Source Current MOSFET symbol 7 (Body iode) showing the I SM Pulsed Source Current integral reverse 68 (Body iode) p-n junction diode V S iode Forward Voltage 3 V T J = 25 C, I S = 0, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 0 Q rr Reverse RecoveryCharge nc di/dt = 00/µs G S Notes: Repetitive rating; pulse width limited by max junction temperature ( See fig ) V = 25V, starting T J = 25 C, L = 0mH R G = 25Ω, I S = 0 (See Figure 2) ƒ I S 0, di/dt 280/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2% 2

3 I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C V S, rain-to-source Voltage (V) Fig Typical Output Characteristics, T J = 25 o C 20µs PULSE WITH T C = 75 C V S, rain-to-source Voltage (V) Fig 2 Typical Output Characteristics, T J = 75 o C I, rain-to-source Current () 00 0 T = 25 C J T = 75 C J V S= 25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) I = 7 V GS = 0V T J, Junction Temperature ( C) Fig 3 Typical Transfer Characteristics Fig 4 Normalized On-Resistance Vs Temperature 3

4 C, Capacitance (pf) 700 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE 600 C rss = Cgd C oss = C ds Cgd 500 C iss 400 C oss C rss V S, rain-to-source Voltage (V) V, Gate-to-Source Voltage (V) GS I = 0 V S = 44V V S = 28V FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5 Typical Capacitance Vs rain-to-source Voltage Fig 6 Typical Gate Charge Vs Gate-to-Source Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V S, Source-to-rain Voltage (V) I, rain Current () 000 OPERTION IN THIS RE LIMITE BY RS(on) 00 0µs 0 00µs T ms C = 25 C T J = 75 C Single Pulse 0ms 0 00 V S, rain-to-source Voltage (V) Fig 7 Typical Source-rain iode Forward Voltage Fig 8 Maximum Safe Operating rea 4

5 I, rain Current (mps) Fig 0a Switching Time Test Circuit V S 90% R G V GS 0V V S Pulse Width µs uty Factor 0. % R U T - V T C, Case Temperature ( C) 0% V GS t d(on) t r t d(off) t f Fig 9 Maximum rain Current Vs Case Temperature Fig 0b Switching Time Waveforms 0 Thermal Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) 2. Peak T J = P M x Z thjc T C t, Rectangular Pulse uration (sec) Notes:. uty factor = t / t 2 PM t t 2 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 L V S.U.T. R G V - 0 V I S t p 0.0Ω Fig 2a Unclamped Inductive Test Circuit V (BR)SS t p V V S E S, Single Pulse valanche Energy (mj) I TOP BOTTOM 0 V = 25V Starting T J, Junction Temperature ( C) I S Fig 2b Unclamped Inductive Waveforms Fig 2c Maximum valanche Energy Vs rain Current Current Regulator Same Type as.u.t. 50KΩ 0 V Q GS Q G Q G 2V.2µF.3µF.U.T. V - S V G V GS 3m Charge I G I Current Sampling Resistors Fig 3a Basic Gate Charge Waveform Fig 3b Gate Charge Test Circuit 6

7 Peak iode Recovery dv/dt Test Circuit U T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as U T I S controlled by uty Factor "" U T - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4 For N-Channel HEXFET power MOSFETs 7

8 TO-220B Package Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.49) 3.54 (.39) (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) (.255) 6.0 (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LE SSIGNMENTS LE SSIGNMENTS HEXFET IGBTs, CoPCK - GTE - GTE 2 - RIN - GTE 2- RIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - RIN 3- EMITTER 4- RIN 4- COLLECTOR 3X.40 (.055).5 (.045) 2.54 (.00) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.04) IMENSIONING & TOLERNCING PER NSI Y4.5M, OUTLINE CONFORMS TO JEEC OUTLINE TO-220B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS. TO-220B Part Marking Information EXMPLE: T HIS IS N IRF00 LOT COE 789 S S EMBLE ON WW 9, 997 IN THE SSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT ERNT IONL RE CT IFIER LOGO S S E MB L Y LOT COE PRT NUMBER TE COE YER 7 = 997 WEEK 9 LINE C ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.02/04 8

9 Note: For the most current drawings please refer to the IR website at: