IRFZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 17.5mΩ I D = 49A
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1 Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO220 contribute to its wide acceptance throughout the industry. G IRFZ44N HEXFET Power MOSFET D S TO220AB V DSS = 55V R DS(on) = 7.5mΩ I D = 49A Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain V 49 I T C = 0 C Continuous Drain V 35 A I DM Pused Drain Current 60 P C = 25 C Power Dissipation 94 W Linear Derating Factor 0.63 W/ C GatetoSource Votage ± 20 V I AR Avaanche Current 25 A E AR Repetitive Avaanche Energy 9.4 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Therma Resistance Storage Temperature Range Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew bf in (.N m) Parameter Typ. Max. Units R θjc JunctiontoCase.5 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 C
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage 55 V = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance 7.5 mω = V, I D = 25A (th) Gate Threshod Votage V V DS =, I D = 250µA g fs Forward Transconductance 9 S V DS = 25V, I D = 25A I DSS DraintoSource Leakage Current 25 V µa DS = 55V, = 0V 250 V DS = 44V, = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 0 = 20V na GatetoSource Reverse Leakage 0 = 20V Q g Tota Gate Charge 63 I D = 25A Q gs GatetoSource Charge 4 nc V DS = 44V Q gd GatetoDrain ("Mier") Charge 23 = V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 2 V DD = 28V t r Rise Time 60 I D = 25A ns t d(off) TurnOff Deay Time 44 R G = 2Ω t f Fa Time 45 = V, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 470 = 0V C oss Output Capacitance 360 V DS = 25V C rss Reverse Transfer Capacitance 88 pf ƒ =.0MHz, See Fig. 5 E AS Singe Puse Avaanche Energy mj I AS = 25A, L = 0.47mH D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 49 (Body Diode) showing the A G I SM Pused Source Current integra reverse 60 (Body Diode) pn junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 25A, = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 25A Q rr Reverse Recovery Charge nc di/dt = 0A/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. (See fig. ) Starting T J = 25 C, L = 0.48mH R G = 25Ω, I AS = 25A. (See Figure 2) ƒ I SD 25A, di/dt 230A/µs, V DD V (BR)DSS, T J 75 C Puse width 400µs; duty cyce 2%. This is a typica vaue at device destruction and represents operation outside rated imits. This is a cacuated vaue imited to T J = 75 C.
3 I D, DraintoSource Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, DraintoSource Votage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D = 49A I D, DraintoSource Current (A) 0 T = 25 J C T J = 75 C V DS= 25V 20µs PULSE WIDTH , GatetoSource Votage (V) R DS(on), DraintoSource On Resistance (Normaized) = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature
4 I D, DraintoSource Current (A) IRFZ44N C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds Crss = Cgd Coss = Cds Cgd C iss C oss SHORTED, GatetoSource Votage (V) I D = 25A V DS = 44V V DS = 27V V DS = V C rss 0 0 V DS, DraintoSource Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current (A) 00 0 T J = 75 C T J = 25 C = 0 V V SD,SourcetoDrain Votage (V) Tc = 25 C Tj = 75 C Singe Puse OPERATION IN THIS AREA LIMITED BY R DS (on) 0µsec msec msec 0 V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating Area
5 50 V DS R D I D, Drain Current (A) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature V DS 90% R G Puse Width µs Duty Factor 0. % D.U.T. Fig a. Switching Time Test Circuit % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms V DD Therma Response (Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase
6 Fig 2a. Uncamped Inductive Test Circuit I AS R G VDS 20V tp tp L D.U.T I AS 0.0Ω 5V V (BR)DSS DRIVER V DD A E AS, Singe Puse Avaanche Energy (mj) TOP BOTTOM I D A 8A 25A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. V DS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 3b. Gate Charge Test Circuit
7 Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD * Reverse Poarity of D.U.T for PChanne Driver Gate Drive Period P.W. D = P.W. Period [ =V ] *** D.U.T. I SD Waveform Reverse Recovery Current ReAppied Votage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 4. For Nchanne HEXFET power MOSFETs
8 Package Outine TO220AB Dimensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) A 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.255) 6. (.240) (.045) M IN LEAD ASSIGNMENTS GATE 2 DRAIN 3 SOU RC E 4 DRAIN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40) 3X.40 (.055).5 (.045) 2.54 (.0) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 4.5M, O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO 2 20 A B. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF W ITH ASSEMBLY LOT CODE 9BM INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CO DE IRF B M A PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK
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More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
EN: This Datasheet is presented by the m anufacturer. Pease v isit our website for pricing and avaiabiity at www.hest ore.hu. Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
EN: This Datasheet is presented by the m anufacturer. Pease v isit our website for pricing and avaiabiity at www.hest ore.hu. Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C
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More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
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Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
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Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
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HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
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PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 27
PD 96329 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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