IRF9530N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.20Ω I D = -14A
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- Bathsheba Harvey
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1 dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G PD 9482C HEXFET Power MOSFET D S V DSS = V R DS(on) = 0.20Ω I D = 4 The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma TO220B resistance and ow package cost of the TO220 contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain V 4 I T C = C Continuous Drain V I DM Pused Drain Current 56 P C = 25 C Power Dissipation 79 W Linear Derating Factor 0.53 W/ C GatetoSource Votage ± 20 V E S Singe Puse vaanche Energy 250 mj I R vaanche Current 8.4 E R Repetitive vaanche Energy 7.9 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 screw bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase.9 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θj Junctiontombient 62 5/3/98
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage V = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I D = m R DS(on) Static DraintoSource OnResistance 0.20 Ω = V, I D = 8.4 (th) Gate Threshod Votage V V DS =, I D = 250µ g fs Forward Transconductance 3.2 S V DS = 50V, I D = 8.4 I DSS DraintoSource Leakage Current 25 V µ DS = V, = 0V 250 V DS = 80V, = 0V, T J = 50 C I GSS GatetoSource Forward Leakage = 20V n GatetoSource Reverse Leakage = 20V Q g Tota Gate Charge 58 I D = 8.4 Q gs GatetoSource Charge 8.3 nc V DS = 80V Q gd GatetoDrain ("Mier") Charge 32 = V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 5 V DD = 50V t r Rise Time 58 I D = 8.4 ns t d(off) TurnOff Deay Time 45 R G = 9.Ω t f Fa Time 46 R D = 6.2Ω, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 760 = 0V C oss Output Capacitance 260 pf V DS = 25V C rss Reverse Transfer Capacitance 70 ƒ =.0MHz, See Fig. 5 D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 4 (Body Diode) showing the I SM Pused Source Current integra reverse G 56 (Body Diode) pn junction diode. S V SD Diode Forward Votage.6 V T J = 25 C, I S = 8.4, = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 8.4 Q rr Reverse RecoveryCharge nc di/dt = /µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 7.0mH R G = 25Ω, I S = 8.4. (See Figure 2) ƒ I SD 8.4, di/dt 490/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%.
3 I D, DraintoSource Current () VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current () VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T c = 25 C V DS, DraintoSource Votage (V) 20µs PULSE W IDTH 0. T C = 75 C 0. V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics 2.5 I D = 4 I D, DraintoSource Current () T = 25 C J V DS = 50V 20µs PULSE WIDTH V, GatetoSource Votage (V) GS T J = 75 C R DS(on), DraintoSource On Resistance (Normaized) = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature
4 C, Capacitance (pf) = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss C oss C rss 0 V DS, DraintoSource Votage (V), GatetoSource Votage (V) I = D 8.4 V DS =80V V DS =50V V DS =20V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current () T J = 50 C T J = 25 C 0. = 0V V SD, SourcetoDrain Votage (V) I I D, Drain Current () 0 OPERTION IN THIS RE LIMITED BY R DS(on) us us ms TC = 25 C TJ = 75 C Singe Puse ms 0 V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating rea
5 I D, Drain Current () R G V DS V Puse Width µs Duty Factor 0. % R D D.U.T. Fig a. Switching Time Test Circuit V DD T, Case Temperature ( C C) t d(on) t r t d(off) t f % Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase
6 Fig 2a. Uncamped Inductive Test Circuit I S V DS L R G D.U.T V DD IS 20V DRIVER tp 0.0Ω 5V E S, Singe Puse vaanche Energy (mj) I D TOP BOTTOM Starting T, Junction Temperature ( J C) Fig 2c. Maximum vaanche Energy Vs. Drain Current tp V (BR)DSS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. V Q G 2V.2µF 50KΩ.3µF Q GS Q GD D.U.T. V DS V G 3m Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD * Reverse Poarity of D.U.T for PChanne Driver Gate Drive Period P.W. D = P.W. Period [ =V ] *** D.U.T. I SD Waveform Reverse Recovery Current Reppied Votage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 4. For PChanne HEXFETS
8 Package Outine TO220B Outine Dimensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.255) 6. (.240) (.045) M IN LED SSIGNMENTS GTE 2 DRIN 3 SOU RC E 4 DRIN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40) 3X.40 (.055).5 (.045) 2.54 (.) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) D IM E N S IO N IN G & TO L E R N C ING P E R N S I Y 4.5M, O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO 2 20 B. 2 CONTROLLING DIMENSION : INCH 4 HETSINK & LED MESUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF W ITH W ITH SSEMBLY LOT LOT CODE CODE 9BM 9BM INTERNTIONL RECTIFIER RECTIFIER IRF IRF LOGO LOGO B 9B M M SSEMBLY SSEMBLY LOT LOT CO DE CO DE PRT PRT NUMBER NUMBER DTE DTE CODE CODE (YYWW) (YYWW) YY YY = YER = YER WW WW = WEEK = WEEK WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CND: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, Toshimaku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Buiding, Singapore 036 Te: Data and specifications subject to change without notice. 5/98
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Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
More informationV DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Appications High frequency DC-DC converters Pasma Dispay Pane Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design, (See
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Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
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HEXFET Power MOSFET PD - 9.235 IRLI620G Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive R DS(ON) Specified at V GS = 4V & 5V Fast Switching Ease
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SMPS MOSFET PD 980 IRFIB7N50 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationIRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
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pplications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Seventh Generation HEXFET Power MOSFETs from Internationa
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF 8 7 6 4 5 HEXFET Power MOSFET P 9624 V SS =
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l Ultra Low OnResistance l Surface Mount (IRFR5305) l Straight Lead (IRFU5305) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from International
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l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
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PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
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HEXFET Power MOSFET Dynamic dv/dt Rating Current Sense 175 C Operating Temperature Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation HEXFETs from Internationa Rectifier
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PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
More informationParameter Typ. Max. Units R qja Junction-to-Amb. (PCB Mount, steady state)* R qja Junction-to-Amb. (PCB Mount, steady state)** 48 60
PD - 91368B IRFL4310 HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paraeing Advanced Process Technoogy Utra Low On-Resistance Description Fifth Generation HEXFETs from Internationa
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PD 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications l High frequency DCDC converters V DSS R DS(on) max I D 200V 0.040Ω 56A Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized
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SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
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l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
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l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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P 9604 IRF7304QPbF dvanced Process Technoogy Utra Low OnResistance ua P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S G S2 G2 8 2 3 4 5 HEXFET Power MOSFET 7 V
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PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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P - 9.26 Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET Very Sma SOIC Package Low Profie (
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