IRF3205 PD D. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.008Ω I D = 110A

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1 P HEXFET Power MOSFET dvanced Process Technoogy Utra Low On-Resistance ynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. G S V SS = 55V R S(on) = 0.008Ω I = 1 The TO-220 package is universay preferred for a commercia-industria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO-220 contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings TO-220B Parameter Max. Units T C = 25 C Continuous rain Current, V V 1 T C = C Continuous rain Current, V V 80 I M Pused rain Current 390 C = 25 C Power issipation 200 W Linear erating Factor 1.3 W/ C V GS Gate-to-Source Votage ±20 V E S Singe Puse vaanche Energy 480 mj I R vaanche Current 59 E R Repetitive vaanche Energy 20 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. bf in (1.1N m) Therma Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case 0.75 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 8/25/97

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = 1m R S(on) Static rain-to-source On-Resistance Ω V GS = V, I = 59 V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance 42 S V S = 25V, I = 59 I SS rain-to-source Leakage Current 25 V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage V GS = 20V n Gate-to-Source Reverse Leakage - V GS = -20V Q g Tota Gate Charge 170 I = 59 Q gs Gate-to-Source Charge 32 nc V S = 44V Q gd Gate-to-rain ("Mier") Charge 74 V GS = V, See Fig. 6 and 13 t d(on) Turn-On eay Time 14 V = 28V t r Rise Time I = 59 ns t d(off) Turn-Off eay Time 43 R G = 2.5Ω t f Fa Time 70 R = 0.39Ω, See Fig. Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 4000 V GS = 0V C oss Output Capacitance 1300 pf V S = 25V C rss Reverse Transfer Capacitance 480 ƒ = 1.0MHz, See Fig. 5 G S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 1 (Body iode) showing the G I SM Pused Source Current 390 integra reverse (Body iode) p-n junction diode. V S iode Forward Votage 1.3 V T J = 25 C, I S = 59, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 59 Q rr Reverse Recovery Charge nc di/dt = /µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L ) S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11 ) V = 25V, starting T J = 25 C, L = 190µH R G = 25Ω, I S = 59. (See Figure 12) ƒ I S 59, di/dt 290/µs, V V (BR)SS, T J 175 C Puse width 300µs; duty cyce 2%. Cacuated continuous current based on maximum aowabe junction temperature; for recommended current-handing of the package refer to esign Tip # 93-4

3 I, rain-to-source C urrent () VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C V S, rain-to-source Votage (V) I, rain-to-source C urrent () VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 175 C V S, rain-to-source Votage (V) Fig 1. Typica Output Characteristic Fig 2. Typica Output Characteristic I, rain-to-s ource C urrent ( ) T = 25 C J V S= 25V 20µs PULSE W ITH V GS T = 175 C J, Gate-to-Source Votage (V) R S(on), rain-to-s ource On Resistance (Normaized) I = 98 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature

4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = 1MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 1 V S, rain-to-source Votage (V) V, G ate-to-source V otage (V ) GS I = 59 V S = 44V V S = 28V V S = 11V FOR TEST CIRCUIT 0 SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () T = 175 C J T = 25 C J I, rain Current ( ) OPERTION IN THIS RE LIMITE BY R S(on) µs µs 1ms ms V GS = 0V V S, Source-to-rain Votage (V) Fig 7. Typica Source-rain iode Forward Votage T C = 25 C T J = 175 C 1 Singe Puse 1 V S, rain-to-source Votage (V) Fig 8. Maximum Safe Operating rea

5 120 LIMITE BY PCKGE V S R I, rain Current () R G V GS V Puse Width 1 µs uty Factor 0.1 %.U.T. Fig a. Switching Time Test Circuit - V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature V S 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 1 Therma Response (Z thjc ) 0.1 = t SINGLE PULSE t (THERML RESPONSE) Notes: 1. uty factor = t 1 / t Peak T J= P M x Z thjc TC t 1, Rectanguar Puse uration (sec) Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case PM

6 L V S.U.T. R G V - V I S t p 0.01Ω Fig 12a. Uncamped Inductive Test Circuit V (BR)SS t p V V S E S, Singe Puse vaanche Energy (mj) TOP BOTTOM V = 25V Starting T J, Junction Temperature ( C) Fig 12c. Maximum vaanche Energy Vs. rain Current I I S Fig 12b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. 50KΩ Q G 12V.2µF.3µF V Q GS Q G.U.T. V - S V GS V G 3m Charge I G I Current Samping Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 14. For N-Channe HEXFETS

8 Package Outine TO-220B Outine imensions are shown in miimeters (inches) 2.87 (.113) 2.62 (.3) (.41 5) (.40 5) 3.78 (.14 9) 3.54 (.13 9) (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.25 5) (.24 0) (.0 4 5) M IN LE SSIGNMENTS 1 - G TE 2 - R IN 3 - SOURCE 4 - R IN (.555) (.530) (.16 0) (.14 0) 1.40 (.055) 1.15 (.045) 2.54 (.) 2X 0.93 (.037) 0.69 (.027) (.01 4) M B M (.02 2) (.01 8) 2.92 (.115) 2.64 (.4) NOTES: 1 IM E N S IO N IN G & TO L ER N C IN G P ER N S I Y 14.5 M, O U TL IN E C O N FO R M S TO JE E C OU T LIN E TO B. 2 CONTR OLLING IMENSION : INCH 4 HETSIN K & LE M ESUREMENTS O NOT INCLUE BU RRS. Part Marking Information TO-220B EXMPLE : THIS IS N IRF WITH SSEMBLY LOT COE 9B1M INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE IRF B 1M PRT NUMBER TE COE (YYWW) YY = YER WW = WEEK WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 7321 Victoria Park ve., Suite 201, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 157, Bad Homburg Te: IR ITLY: Via Liguria 49, 71 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Te: IR SOUTHEST SI: 315 Outram Road, #-02 Tan Boon Liat Buiding, Singapore 0316 Te: ata and specifications subject to change without notice. 8/97

9 Package Outine TO-220B Outine imensions are shown in miimeters (inches) 2.87 (.113) 2.62 (.3) (.600) (.584) (.555) (.530).54 (.415).29 (.405) (.255) 6. (.240) 1.15 (.045) MIN 3.78 (.149) 3.54 (.139) 4.06 (.160) 3.55 (.140) (.185) 4.20 (.165) - B (.052) 1.22 (.048) LE SSIGNMENTS 1 - GTE 2 - RIN 3 - SOURCE 4 - RIN NOTES: 1.40 (.055) 1.15 (.045) 2.54 (.) 2X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B M 2.92 (.115) 2.64 (.4) 0.55 (.022) 0.46 (.018) 1 IMENSIONING & TOLERNCING PER NSI Y14.5M, OUTLINE CONFORMS TO JEEC OUTLINE TO-220-B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS.