Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Transcription

1 l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G S P B IRFIZ34N HEXFET Power MOSFET V SS = 55V R S(on) = 0.04Ω I = 2 The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab TO-220 FULLPK and external heatsink. This isolation is equivalent to using a 0 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. bsolute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 2 T C = 0 C Continuous rain Current, V V 5 I M Pulsed rain Current 0 C = 25 C Power issipation 37 W Linear erating Factor 0.24 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy mj I R valanche Current 6 E R Repetitive valanche Energy 3.7 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 screw lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 4. C/W R θj Junction-to-mbient 65 7/9/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0.04 Ω V GS = V, I = V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 6.5 S V S = 25V, I = 6 I SS rain-to-source Leakage Current 25 V µ S = 55V, V GS = 0V 250 V S = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V n Gate-to-Source Reverse Leakage -0 V GS = -20V Q g Total Gate Charge 34 I = 6 Q gs Gate-to-Source Charge 6.8 nc V S = 44V Q gd Gate-to-rain ("Miller") Charge 4 V GS = V, See Fig. 6 and 3 t d(on) Turn-On elay Time 7.0 V = 28V t r Rise Time 49 I = 6 ns t d(off) Turn-Off elay Time 3 R G = 8Ω t f Fall Time 40 R =.8Ω, See Fig. Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 240 pf V S = 25V C rss Reverse Transfer Capacitance 0 ƒ =.0MHz, See Fig. 5 C rain to Sink Capacitance 2 ƒ =.0MHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2 (Body iode) showing the I SM Pulsed Source Current integral reverse G 0 (Body iode) p-n junction diode. V S iode Forward Voltage.6 V T J = 25 C, I S =, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 6 Q rr Reverse RecoveryCharge nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) S S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V = 25V, starting T J = 25 C, L = 6µH R G = 25Ω, I S = 6. (See Figure 2) ƒ I S 6, di/dt 420/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%. t=60s, ƒ=60hz Uses IRFZ34N data and test conditions

3 I, rain-to-source Current () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, rain-to-source Current () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH TC J = 25 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics 20µs PULSE WITH TC J = 75 C 0. 0 V S, rain-to-source Voltage (V) Fig 2. Typical Output Characteristics I, rain-to-source Current () 0 T = 25 C J T = 75 C J V S = 25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) I = 26 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C iss C oss = C ds Cgd C oss C rss V, Gate-to-Source Voltage (V) GS I = 6 V S = 44V V S = 28V 0 0 V S, rain-to-source Voltage (V) 0 FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V S, Source-to-rain Voltage (V) I, rain Current () 00 OPERTION IN THIS RE LIMITE BY RS(on) 0 µs 0µs ms T C = 25 C T J = 75 C ms Single Pulse 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea

5 25 20 R G V GS V S IRFIZ34N R.U.T. - V I, rain Current () 5 5 Fig a. Switching Time Test Circuit V S 90% V Pulse Width µs uty Factor 0. % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t Peak T J= P M x Z thjc TC t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 L V S.U.T. R G V - I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)SS t p V E S, Single Pulse valanche Energy (mj) I TOP 6.5 BOTTOM 6 V = 25V Starting T J, Junction Temperature ( C) V S Fig 2c. Maximum valanche Energy Vs. rain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF V Q GS Q G.U.T. V - S V GS V G 3m Charge Fig 3a. Basic Gate Charge Waveform I G I Current Sampling Resistors Fig 3b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For N-Channel HEXFETS

8 Package Outline TO-220 Fullpak Outline imensions are shown in millimeters (inches) 6.00 (.630) 5.80 (.622).60 (.47).40 (.409) (.33) ø 3. (.23) (.45) 3.20 (.26).5 (.045) MIN (.30) 3. (.22) 4.80 (.89) 4.60 (.8) 7. (.280) 6.70 (.263) 2.80 (.) 2.60 (.2) LE SSIGNMENTS - GTE 2 - RIN 3 - SOURCE NOTES: IMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING IMENSION: INCH (.540) 3.50 (.530) - B - C 3X.40 (.055).05 (.042) 2.54 (.0) 2X 0.90 (.035) 3X 0.70 (.028) Part Marking Information TO-220 Fullpak 0.25 (.0) M M B EXMPLE : THIS IS N IRFI840G WITH SSEMBLY LOT COE E40 INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE 0.48 (.09) 3X 0.44 (.07) 2.85 (.2) 2.65 (.4) IRFI840G E B MINIMUM CREEPGE ISTNCE BETWEEN -B-C- = 4.80 (.89) PRT NUMBER TE COE (YYWW) YY = YER WW = WEEK WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Building, Singapore 036 Tel: ata and specifications subject to change without notice. 7/04

9 Note: For the most current drawings please refer to the IR website at: