Absolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
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1 P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R G escription This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency C-C converters that power the latest generation of microprocessors. The IRF7809V has been optimized for all parameters that are critical in synchronous buck converters including R S(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809V offers particulary low R S(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. S S S G SO-8 Top View EVICE CHRCTERISTICS IRF7809V R S(on) 7.0mΩ Q G 41nC Q sw 14nC Q oss 30nC bsolute Maximum Ratings Parameter Symbol IRF7809 V Units rain-source Voltage V S 30 V Gate-Source Voltage V GS ±12 Continuous rain or Source T = 25 C I 13.3 Current (V GS 4.5V) T L = 90 C 14.6 Pulsed rain Current I M Power issipation T = 25 C P 2.5 W T L = 90 C 3.0 Junction & Storage Temperature Range T J, T STG 55 to 150 C Continuous Source Current (Body iode) I S 2.5 Pulsed Source Current I SM 50 Thermal Resistance Parameter Max. Units Maximum Junction-to-mbientƒ R θj 50 C/W Maximum Junction-to-Lead R θjl 20 C/W 8/23/05
2 IRF7809V Electrical Characteristics Parameter Min Typ Max Units Conditions rain-to-source BV SS 30 V V GS = 0V, I = 250µ Breakdown Voltage Static rain-source R S(on) mω V GS = 4.5V, I = 15 on Resistance Gate Threshold Voltage V GS(th) 1.0 V V S = V GS,I = 250µ rain-source Leakage I SS 30 V S = 24V, V GS = 0 Current Current* 150 µ V S = 24V, V GS = 0, Tj = C Gate-Source Leakage I GSS ± n V GS = ±12V Current* Total Gate Chg Cont FET Q G V GS =5V, I =15, V S =20V Total Gate Chg Sync FET Q G V GS = 5V, V S < mv Pre-Vth Q GS1 7.0 V S = 20V, I = 15 Gate-Source Charge Post-Vth Q GS2 2.3 nc Gate-Source Charge Gate to rain Charge Q G 12 I =15, V S =16V Switch Chg(Q gs2 + Q gd ) Q sw Output Charge* Q oss V S = 16V, V GS = 0 Gate Resistance R G Ω Turn-on elay Time t d (on) 14 V = 16V, I = 15 Rise Time t r 36 ns V GS = 5V Turn-off elay Time t d (off) 96 Clamped Inductive Load Fall Time t f Input Capacitance C iss 3780 Output Capacitance C oss 60 pf V S = 16V, V GS = 0 Reverse Transfer Capacitance C rss 130 Source-rain Rating & Characteristics Parameter Min Typ Max Units Conditions iode Forward V S 1.3 V I S = 15, V GS = 0V Voltage* Reverse Recovery Charge Q rr 120 nc di/dt ~ 700/µs V S = 16V, V GS = 0V, I S = 15 Reverse Recovery Q rr(s) 150 nc di/dt = 700/µs Charge (with Parallel (with BQ040) Schottky) V S = 16V, V GS = 0V, I S = 15 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. ƒ When mounted on 1 inch square copper board, t < sec. Typ = measured - Q oss Typical values measured at V GS = 4.5V, I F =
3 IRF7809V I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 150 C V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 0 T J = 150 C T J = 25 C V S = 15V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = V GS = V T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 IRF7809V C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTE V GS, Gate-to-Source Voltage (V) I = 15 V S = 20V C rss 0 1 V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 0 1 T J = 150 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) us us 1ms T = 25 C ms TJ = 150 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 IRF7809V 16 V S R I, rain Current () T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width 1 µs uty Factor 0.1 %.U.T. % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms + - V Thermal Response (Z thj ) = SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J= P M x Z thj + T t 1, Rectangular Pulse uration (sec) PM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5
6 R S (on), rain-to-source On Resistance (Ω) IRF7809V R S(on), rain-to -Source On Resistance ( Ω) V GS = 4.5V V GS = V I = I, rain Current () V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. rain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 12V I S V GS.2µF 50KΩ 3m.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 13a&b. Basic Gate Charge Test Circuit and Waveform tp V (BR)SS R G V S 20V V G tp Q GS L.U.T IS 0.01Ω Q G Q G Charge 15V RIVER + - V E S, Single Pulse valanche Energy (mj) I TOP BOTTOM Starting T, Junction Temperature( J C) Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum valanche Energy and Waveforms Vs. rain Current 6
7 IRF7809V SO-8 Package etails E X e B H 0.25 [.0] IM INCHES MILLIMET ERS MIN MX MIN MX b c E e e1 H K L y BSIC 1.27 BSIC.025 BSIC BSIC e1 C y K x 45 SO-8 Part Marking 8X b [.0] C B 0. [.004] NOT ES : 1. IMENSIONING & TOLERNCING PER SME Y14.5M CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.15 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. 8X L 8X c [.255] 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] EXMPLE: THIS IS N IRF71 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F71 TE COE (YWW) P = ES IGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER 7
8 IRF7809V SO-8 Tape and Reel TERMINL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-481 & EI (12.992) MX. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-481 & EI (.566 ) (.488 ) IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. 08/05 8
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More informationIRLR8503 IRLR8503 PD-93839C. HEXFET MOSFET for DC-DC Converters Absolute Maximum Ratings. Thermal Resistance Parameter
PD-93839C N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction es Minimizes Parallel MOSFETs for high current applications 100% R G Tested HEXFET MOSFET for DC-DC Converters
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationD 2 Pak TO
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationIRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance
l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
More informationThermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient 100 C/W
P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
More informationIRF9953. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.25Ω PRELIMINARY
Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
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l Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (
More informationmj I AR Avalanche Currentc 22 Linear Derating Factor
P 95823C IRF6620 l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
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Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery
More informationAbsolute Maximum Ratings
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationIRL3803 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.006Ω I D = 120A PRELIMINARY. Description. Absolute Maximum Ratings
l Logic-Level Gate rive l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs
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Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
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l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
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IGITL UIO MOSFET Features Latest MOSFET Silicon technology Key parameters optimized for Class- audio amplifier applications Low R S(on) for improved efficiency Low Q g for better TH and improved efficiency
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Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
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l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
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P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationApplications DSS 150V RDS(on) typ. 12m max. 15m Benefits 85A Absolute Maximum Ratings Symbol Parameter Max. Units
P - 975C IRFS432PbF IRFSL432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95071A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
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IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationIRLIZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 30A. Description. Thermal Resistance PD A TO-220 FULLPAK
l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
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Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
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Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (
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Typical R S (on) (mω), Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More information8 S1, D2. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode Ideal for Synchronous Buck DC-DC Converters Up to A Peak Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier D D 2
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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