IRLMS6702PbF HEXFET Power MOSFET
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- Opal Gaines
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1 l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R S(on) 60% less than a similar size SOT23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R S(on) reduction enables a currenthandling increase of nearly 300% compared to the SOT23. G 2 Top View IRLMS6702PbF HEXFET Power MOSFET S Micro6 P V SS = 20V R S(on) = 0.20Ω bsolute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V 4.5V 2.4 T = 70 C Continuous rain Current, V 4.5V.9 I M Pulsed rain Current 3 = 25 C Power issipation.7 W Linear erating Factor 3 mw/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Thermal Resistance Ratings Parameter Min. Typ. Max Units R θj Maximum Junctiontombient 75 C/W /4/05
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 20 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m V GS = 4.5V, I =.6 ƒ R S(on) Static raintosource OnResistance Ω V GS = 2.7V, I = 0.80 ƒ V GS(th) Gate Threshold Voltage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance.5 S V S = 0V, I = 0.80 I SS raintosource Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 00 V GS = 2V n GatetoSource Reverse Leakage 00 V GS = 2V Q g Total Gate Charge I =.6 Q gs GatetoSource Charge nc V S = 6V Q gd Gatetorain ("Miller") Charge V GS = 4.5V, See Fig. 6 and 9 ƒ t d(on) TurnOn elay Time 3 V = 0V t r Rise Time 20 I =.6 ns t d(off) TurnOff elay Time 2 R G = 6.0Ω t f Fall Time 8 R = 6.Ω, See Fig. 0 ƒ C iss Input Capacitance 20 V GS = 0V C oss Output Capacitance 30 pf V S = 5V C rss Reverse Transfer Capacitance 73 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol.7 (Body iode) showing the I SM Pulsed Source Current integral reverse G 3 (Body iode) pn junction diode. V S iode Forward Voltage.2 V T J = 25 C, I S =.6, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F =.6 Q rr Reverse RecoveryCharge 5 22 nc di/dt = 00/µs ƒ S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) I S.6, di/dt 00/µs, V V (BR)SS, T J 50 C ƒ Pulse width 300µs; duty cycle 2%. Surface mounted on FR4 board, t 5sec. 2
3 I, raintosource Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.75V.75V I, raintosource Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.75V.75V 20µs PULSE WITH 0. T J = 25 C 0. 0 V S, raintosource Voltage (V) Fig. Typical Output Characteristics 20µs PULSE WITH 0. T J = 50 C 0. 0 V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics I, raintosource Current () 00 0 T J = 25 C T J = 50 C V S = 0V 20µs PULSE WITH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics R S(on), raintosource On Resistance (Normalized) I =.6 V GS = 4.5V T J, Junction Temperature ( C) Fig 4. Normalized OnResistance Vs. Temperature 3
4 C, Capacitance (pf) 400 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd 300 C iss C oss 200 C rss V S, raintosource Voltage (V) V GS, GatetoSource Voltage (V) I =.6 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY RS(on) 00µs ms 0ms V GS = 0V V S, Sourcetorain Voltage (V) T = 25 C T J = 50 C Single Pulse V, raintosource Voltage (V) S Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 4.5V Q GS Q G Q G R G V GS V S R.U.T. V V G 4.5V Pulse Width µs uty Factor 0. % Charge Fig 9a. Basic Gate Charge Waveform Fig 0a. Switching Time Test Circuit 2V Current Regulator Same Type as.u.t..2µf 50KΩ.3µF V GS t d(on) t r t d(off) t f 0%.U.T. V S V GS 3m I G I Current Sampling Resistors 90% V S Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J=P M x Z thj T t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient 5
6 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test * V * Reverse Polarity of.u.t for PChannel river Gate rive Period P.W. = P.W. Period [ V GS =0V ] ***.U.T. I S Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 2. For Pchannel HEXFET power MOSFETs 6
7 Micro6 (SOT23 6L) Package Outline imensions are shown in milimeters (inches) 3.00 (.8 ) 2.80 (. ) B LE SSIGNMENTS RECOMMENE FOOTPRINT S 2X 0.95 (.0375 ).75 (.068 ).50 (.060 ) (.8 ) 2.60 (.03 ) (.087 ) 6X (.06 (.042 ) 0.95 (.0375 ) 2X 0.50 (.09 ) 6X 0.35 (.04 ) 0.5 (.006 ) M C S B S G 6X 0.65 (.025 ).30 (.05 ) 0.90 (.036 ).45 (.057 ) 0.90 (.036 ) O O (.007 ) 6X 0.09 (.004 ) C 0.5 (.006 ) MX. 0.0 (.004 ) 6 SURFCES 0.60 (.023 ) 0.0 (.004 ) NOTES :. IMENSIONING & TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : MILLIMETER. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). Micro6 (SOT23 6L) Part Marking Information PRT NUMBER PRT NUMBER COE REFERENCE: = IRLMS902 B = IRLMS503 C = IRL MS 6702 = IRLMS 5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 TOP Note: line above the work week (as shown here) indicates LeadFree. Y = YER W = WE EK LOT COE W = (26) IF PRECEE BY LS T IGIT OF CLENR YER W = (2752) IF PRECEE BY LETTER 27 B 28 C E F G H J K YER YER Y Y WORK WE EK WORK WE EK W B C X Y Z W B C Y X Z
8 Micro6 Tape & Reel Information imensions are shown in milimeters (inches) 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EI48 & EI ( ) MX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI54. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information0/05 8
IRLMS5703PbF. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.18Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationV DSS R DS(on) max I D. 30V GS = 10V 13A. 100 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems 8 S 2 7 S
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l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
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Typical R S(on) (mω) RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) pplication Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
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l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
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Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
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UTOMOTIVE GRE UIRF746Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
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UTOMOTIVE GRE UIRF7207Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P-Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
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l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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