W Linear Derating Factor 0.016

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1 HEXFET Power MOSFET l Generation V Technology l Ultra Low OnResistance 8 S l ual PChannel Mosfet 2 7 G l Surface Mount l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching Top View escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO8 has been modified through a customized leadframe for enhanced thermal characteristics and multipledie capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. P 9.240C IRF7304 V SS = 20V R S(on) = 0.090Ω SO8 bsolute Maximum Ratings Parameter Max. Units T = 25 C Sec. Pulsed rain Current, V 4.5V 4.7 T = 25 C Continuous rain Current, V 4.5V 4.3 T = 70 C Continuous rain Current, V 4.5V 3.4 I M Pulsed rain Current 7 = 25 C Power issipation 2.0 W Linear erating Factor 0.06 W/ C V GS GatetoSource Voltage ±2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Thermal Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junctiontombient 62.5 C/W 8/25/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.02 V/ C Reference to 25 C, I = m R S(ON) Static raintosource OnResistance V GS = 4.5V, I = 2.2 ƒ Ω 0.40 V GS = 2.7V, I =.8 ƒ V GS(th) Gate Threshold Voltage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 4.0 S V S = 6V, I = 2.2 I SS raintosource Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C GatetoSource Forward Leakage 0 V GS = 2V I GSS n GatetoSource Reverse Leakage 0 V GS = 2V Q g Total Gate Charge 22 I = 2.2 Q gs GatetoSource Charge 3.3 nc V S = 6V Q gd Gatetorain ("Miller") Charge 9.0 V GS = 4.5V, See Fig. 6 and 2 ƒ t d(on) TurnOn elay Time 8.4 V = V t r Rise Time 26 I = 2.2 ns t d(off) TurnOff elay Time 5 R G = 6.0Ω t f Fall Time 33 R = 4.5Ω, See Fig. ƒ L Internal rain Inductance 4.0 L S Internal Source Inductance 6.0 Between lead tip and center of die contact C iss Input Capacitance 6 V GS = 0V C oss Output Capacitance 3 pf V S = 5V C rss Reverse Transfer Capacitance 70 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.5 (Body iode) showing the I SM Pulsed Source Current integral reverse G 7 (Body iode) pn junction diode. S V S iode Forward Voltage.0 V T J = 25 C, I S =.8, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.2 Q rr Reverse RecoveryCharge 7 µc di/dt = 0/µs ƒ t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L ) nh G S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) ƒ Pulse width 300µs; duty cycle 2%. I S 2.2, di/dt 50/µs, V V (BR)SS, T J 50 C

3 I, raintosource Current () 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V I, raintosource C urrent ( ) 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULSE WITH T J = 25 C V S, raintosource Voltage (V) 20µs PULSE WITH T J = 50 C V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintosource C urrent ( ) 0 T J = 25 C T J = 50 C V S = 5 V 20µs PULSE W ITH V GS, GatetoSource Voltage (V) R S(on), raintosource On R esistance (N ormalized) I = 3.6 V 0.0 GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature

4 C, Capacitance (pf) 500 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C is s 00 C oss C rss V S, raintosource Voltage (V) V GS, GatetoSource V oltage (V ) I = 2.2 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () 0 T J = 50 C T J = 25 C 0. V GS = 0V V S, Sourcetorain Voltage (V) I I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) ms T = 25 C ms TJ = 50 C Single Pulse 0 V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea

5 V S R I, rain Current () Fig a. Switching Time Test Circuit V S 90% R G V GS 4.5 V Pulse Width µs uty Factor 0. %.U.T. V T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. mbient Temperature Fig b. Switching Time Waveforms 0 Thermal Response (Z thj ) = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj T t, Rectangular Pulse uration (sec) PM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient

6 Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 4.5 V Q GS Q G.U.T. V S V GS V G 3m Charge Fig 2a. Basic Gate Charge Waveform I G I Current Sampling Resistors Fig 2b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer ** V GS * R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test * V * Reverse Polarity for PChannel ** Use PChannel river for PChannel Measurements river Gate rive Period P.W. = P.W. Period [ V GS =V] ***.U.T. I S Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 3. For PChannel HEXFETS

8 Package Outline SO8 Outline 5 E B H 0.25 (.0) M M e 6X e K x 45 θ C 0. (.004) L 6 B 8X 8X 0.25 (.0) M C S B S NOTES:. IMENSIONING N TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS02. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. C 8X INCHES MILLIMETERS IM MIN MX MIN MX B C E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L θ RECOMMENE FOOTPRINT 6.46 (.255 ).27 (.050 ) 3X 0.72 (.028 ) 8X.78 (.070) 8X Part Marking Information SO8 EXMPLE : THIS IS N IRF7 INTERNTIONL RECTIFIER LOGO F7 TOP 32 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK PRT NUMBER W FER LOT COE (LST 4 IGITS) XXXX BOTTOM

9 Tape & Reel Information SO8 imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTIO N NOTES:. CO NTR O LL IN G IM EN S IO N : M ILL IM E TE R. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Building, Singapore 036 Tel: ata and specifications subject to change without notice. 8/97

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