Parameter Maximum Units
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1 l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, P, etc. IRF7526 MOSFET & Schottky iode K K P -9649C V SS = -30V R S(on) = 0.20Ω Schottky Vf = 0.39V The new Micro8 TM package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro8 TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCI cards. Micro8 TM bsolute Maximum Ratings Parameter Maximum Units T = 25 C -2.0 Continuous rain Current, V T = 70 C -4.5V -.6 I M Pulsed rain Current ➀ -6 = 25 C.25 Power issipation = 70 C 0.8 W Linear erating Factor 0 mw/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak iode Recovery dv/dt ➁ -5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to +50 C Thermal Resistance Ratings Parameter Maximum Units R θj Junction-to-mbient ➃ 00 C/W Notes: Repetitive rating pulse width limited by max. junction temperature (see Fig. 9) I S -.2, di/dt 60/µs, V V (BR)SS, T J 50 C ƒ Pulse width 300µs duty cycle 2% When mounted on inch square copper board to approximate typical multi-layer PCB thermal resistance 5/7/99
2 IRF7526 MOSFET Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -30 V V GS = 0V, I = -250µ R V GS = -0V, I = -.2 ƒ S(on) Static rain-to-source On-Resistance Ω V GS = -4.5V, I = ƒ V GS(th) Gate Threshold Voltage -.0 V V S = V GS, I = -250µ g fs Forward Transconductance 0.94 S V S = -0V, I = V S = -24V, V GS = 0V I SS rain-to-source Leakage Current µ -25 V S = -24V, V GS = 0V, T J = 25 C I Gate-to-Source Forward Leakage -00 V GS = -20V GSS n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge 7.5 I = -.2 Q gs Gate-to-Source Charge.3.9 nc V S = -24V Q gd Gate-to-rain ("Miller") Charge V GS = -0V, See Fig. 6 ƒ t d(on) Turn-On elay Time 9.7 V = -5V t r Rise Time 2 I = -.2 ns t d(off) Turn-Off elay Time 9 R G = 6.2Ω t f Fall Time 9.3 R = 2Ω, ƒ C iss Input Capacitance 80 V GS = 0V C oss Output Capacitance 87 pf V S = -25V C rss Reverse Transfer Capacitance 42 ƒ =.0MHz, See Fig. 5 MOSFET Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current(Body iode) -.25 I SM Pulsed Source Current (Body iode) -9.6 V S Body iode Forward Voltage -.2 V T J = 25 C, I S = -.2, V GS = 0V t rr Reverse Recovery Time (Body iode) ns T J = 25 C, I F = -.2 Q rr Reverse Recovery Charge nc di/dt = 00/µs ƒ Schottky iode Maximum Ratings Parameter Max. Units Conditions I F(av) Max. verage Forward Current.9 50% uty Cycle. Rectangular Wave, T = 25 C.3 See Fig. 4 T = 70 C I SM Max. peak one cycle Non-repetitive 20 5µs sine or 3µs Rect. pulse Following any rated Surge current 0ms sine or 6ms Rect. pulse load condition & with V RRM applied Schottky iode Electrical Specifications Parameter Max. Units Conditions V FM Max. Forward voltage drop 0.50 I F =.0, T J = 25 C 0.62 I F = 2.0, T J = 25 C V 0.39 I F =.0, T J = 25 C 0.57 I F = 2.0, T J = 25 C. I RM Max. Reverse Leakage current 0.06 V R = 30V T J = 25 C m 6 T J = 25 C C t Max. Junction Capacitance 92 pf V R = 5Vdc ( 00kHz to MHz) 25 C dv/dt Max. Voltage Rate of Charge 3600 V/µs Rated V R ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2
3 IRF7526 Power Mosfet Characteristics -I, rain-to-source Current () 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V -I, rain-to-source Current () 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) 20µs PULSE WITH T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I, rain-to-source Current () 0 0. T J = 25 C T J = 50 C V S = -0V 20µs PULSE W ITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (N orm alized) I = -.2 V GS = -0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 IRF7526 Power Mosfet Characteristics C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd V S, rain-to-source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = -.2 V S = -24V V S = -5V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I S, Reverse rain Current () 0 0. T J = 50 C T J = 25 C V GS = 0V V S, Source-to-rain Voltage (V) -I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00µs ms 0ms T = 25 C T J = 50 C Single P u lse V, rain-to-source Voltage (V) S Fig 7. Typical Source-rain iode Fig 8. Maximum Safe Operating rea Forward Voltage 4
5 IRF7526 Power Mosfet Characteristics 000 Thermal Response (Z thjc ) 00 = PM 0.0 t SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thjc + TC t, Rectangular Pulse uration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-mbient RS (on), rain-to-source On Resistance (Ω) VGS = -4.5V VGS = -0V RS (on), rain-to-source On Resistance (Ω) I = I, rain Current () -V GS, G ate-to-source Voltage (V) Fig 0. Typical On-Resistance Vs. rain Current Fig. Typical On-Resistance Vs. Gate Voltage 5
6 IRF7526 Schottky iode Characteristics T J = 50 C Instantaneous Forward Current - I F () T J = 50 C T J = 25 C T J = 25 C Forward Forward Voltage rop - V FM (V) F (V) Fig. 2 -Typical Forward Voltage rop Characteristics Reverse Current - IR (m) llowable mbient Temperature - ( C) C 00 C 75 C 50 C 25 C Reverse Voltage - V R (V) Fig. 3 - Typical Values of Reverse Current Vs. Reverse Voltage = 3/4 = /2 =/3 = /4 = /5 V r = 80% Rated R thj = 00 C /W Square wave C verage Forward Current - I F(V) () Fig.4 - Maximum llowable mbient Temp. Vs. Forward Current 6
7 Micro8 TM Package etails 3 E - - e 6X - B e - C - B 8X 0.08 (.003) M C S B S H 0.25 (.00) M M 0.0 (.004) θ LE SSIGNMENTS SINGLE L 8X UL S S S G S G S2 G2 C 8X INCHES MILLIMETERS IM MIN MX MIN MX B C e.0256 BSIC 0.65 BSIC e.028 BSIC 0.33 BSIC E H L θ (.04 ) 8X RECOMMENE FOOTPRINT 3.20 (.26 ) 0.38 (.05 ) 8X (.67 ) (.208 ) IRF7526 Part Marking NOTES: IMENSIONING N TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3 IMENSIONS O NOT INCLUE MOL FLSH (.0256 ) 6X 7
8 IRF7526 Micro8 TM Tape & Reel TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. OUTLINE CONFORMS TO EI-48 & EI CONTROLLING IMENSION : MILLIMETER (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) IR GRET BRITIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 007 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: IR TIWN:6 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Tel: ata and specifications subject to change without notice. 5/99 8
SMPS MOSFET. Symbol Parameter Max. Units
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l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
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l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
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P- 94036B SMPS MOSFET IRF747 Applications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
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SMPS MOSFET PD 980 IRFIB7N50 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg
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HEXFET Power MOSFET PD - 9.235 IRLI620G Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive R DS(ON) Specified at V GS = 4V & 5V Fast Switching Ease
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
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pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9878C IRF830 HEXFET Power MOSFET V DSS Rds(on) max I D 500V.40Ω 5.0 Benefits l
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HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
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l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
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l l l l l dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
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l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge
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HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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P - 9.26 Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET Very Sma SOIC Package Low Profie (
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
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Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to
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l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
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Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification
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pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9809B IRFBN50 HEXFET Power MOSFET V DSS Rds(on) max I D 500V 0.52Ω Benefits l
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P - 95039 IRF733PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (
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pplications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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UTOMOTIVE GRE UIRF746Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
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UTOMOTIVE GRE UIRF7207Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P-Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
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Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
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l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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PD - 91368B IRFL4310 HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paraeing Advanced Process Technoogy Utra Low On-Resistance Description Fifth Generation HEXFETs from Internationa
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pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters in Networking Systems l Lead-Free S S 2 IRF377PbF HEXFET Power MOSFET 8 7 P - 9579
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l dvanced Process Technology l Ultra Low OnResistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription Fifth Generation HEXFETs from International
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Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
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