V DSS R DS(on) max Qg 30V GS = 10V 44nC

Transcription

1 pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits l Very Low Gate Charge l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized valanche Voltage and Current l 20V V GS Max. Gate Rating l % tested for Rg l Lead-Free S S S G Top View SO-8 escription The incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency C-C converters that power the latest generation of processors for notebook and Netcom applications. bsolute Maximum Ratings Parameter V S V GS T = 25 C T = 70 C I M = 25 C = 70 C T J T STG rain-to-source Voltage Gate-to-Source Voltage Continuous rain Current, V V Continuous rain Current, V V Pulsed rain Current c Power issipation Power issipation Linear erating Factor Operating Junction and Storage Temperature Range Max. 30 ± to 50 Units V W W/ C C Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead g 20 C/W R θj Junction-to-mbient fg 50 Notes through are on page 9 8/8/08

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250μ ΔΒV SS /ΔT J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance V GS = V, I = 24 e mω V GS = 4.5V, I = 9 e V GS(th) Gate Threshold Voltage V V S = V GS, I = μ ΔV GS(th) Gate Threshold Voltage Coefficient mv/ C I SS rain-to-source Leakage Current.0 V μ S = 24V, V GS = 0V 50 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage V n GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 95 S V S = 5V, I = 9 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 2 V S = 5V Q gs2 Post-Vth Gate-to-Source Charge 4.7 V nc GS = 4.5V Q gd Gate-to-rain Charge 4 I = 9 Q godr Gate Charge Overdrive 3.3 See Figs. 7a & 7b Q sw Switch Charge (Q gs2 Q gd ) 8.7 Q oss Output Charge 22 nc V S = 6V, V GS = 0V R g Gate Resistance Ω t d(on) Turn-On elay Time 23 V = 5V, V GS = 4.5V t r Rise Time 24 I ns = 9 t d(off) Turn-Off elay Time 23 R G =.8Ω t f Fall Time See Fig. 5a & 5b C iss Input Capacitance 5720 V GS = 0V C oss Output Capacitance 980 pf V S = 5V C rss Reverse Transfer Capacitance 450 ƒ =.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 230 mj I R valanche Current c 9 iode Characteristics Parameter Min. Typ. Max. Units Conditions Conditions I S Continuous Source Current 3. MOSFET symbol (Body iode) showing the G I SM Pulsed Source Current integral reverse 90 (Body iode)c S p-n junction diode. V S iode Forward Voltage.0 V T J = 25 C, I S = 9, V GS = 0V e 0.75 V T J = 25 C, I S = 2.2, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 9, V = 5V Q rr Reverse Recovery Charge nc di/dt = 230/μs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSL) 2

3 I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () 0 VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 0 VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V V 60μs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 2.3V 60μs PULSE WITH Tj = 50 C 0. V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 V S = 5V 60μs PULSE WITH 2.0 I = 24 V GS = V.5 T J = 50 C T J = 25 C V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3

4 I S, Reverse rain Current () I, rain-to-source Current () C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 6 2 I = 9 V S = 24V V S = 5V 00 C iss 8 C oss 0 C rss 4 V S, rain-to-source Voltage (V) Q g, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0 0 OPERTION IN THIS RE LIMITE BY R S (on) T J = 50 C μsec T J = 25 C V GS = 0V V S, Source-to-rain Voltage (V) 0. T = 25 C Tj = 50 C Single Pulse msec msec 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 I, rain Current () V GS(th), Gate Threshold Voltage (V) I = 250μ I = μ T, mbient Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current vs. mbient Temperature Fig. Threshold Voltage vs. Temperature = 0.50 Thermal Response ( Z thj ) SINGLE PULSE ( THERML RESPONSE ) τj τj τ τ Ci= τi/ri R R E-006 E τ2 τ2 R2 R2 R3 R3 t, Rectangular Pulse uration (sec) τ3 τ3 R4 R4 τ4 τ4 R5 R5 τ5 τ5 R6 R6 τ6 τ6 R7 R7 τ7 τ7 R8 R8 τ8 τ8 τa Ri ( C/W) τι (sec) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R S (on), rain-to -Source On Resistance (mω) E S, Single Pulse valanche Energy (mj) 7 6 I = I TOP BOTTOM T J = 25 C T J = 25 C V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On-Resistance vs. Gate Voltage Fig 3. Maximum valanche Energy vs. rain Current 5V tp V (BR)SS V S L RIVER R G 20V V GS tp.u.t I S 0.0Ω - V Fig 4a. Unclamped Inductive Test Circuit I S Fig 4b. Unclamped Inductive Waveforms V S R V S 90% V GS.U.T. R G - V V GS Pulse Width µs uty Factor 0. % % V GS t d(on) t r t d(off) t f Fig 5a. Switching Time Test Circuit Fig 5b. Switching Time Waveforms 6

7 -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 6. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Id Vds Vgs 0 20K K UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 7a. Gate Charge Test Circuit Fig 7b. Gate Charge Waveform 7

8 SO-8 Package Outline imensions are shown in milimeters (inches) E 6 6X e B H 0.25 [.0] IM INCHES MILLIME T E RS MIN MX MIN MX b c E e e H K L y BS IC.27 BS IC.025 BS IC BSIC e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c F OOT PRINT NOTES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE [.255] 8X 0.72 [.028] SO-8 Part Marking Information EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO 3X.27 [.050] XXXX F7 TE COE (YWW) P = ISGNTES LE - FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER 8X.78 [.070] Note: For the most current drawing please refer to IR website at 8

9 SO-8 Tape and Reel imensions are shown in milimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.25mH, R G = 25Ω, I S = 9. ƒ Pulse width 400μs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 90 C. Note: For the most current drawing please refer to IR website at ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.08/08 9