IRF9910PbF HEXFET Power MOSFET R DS(on) max

Transcription

1 Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 2V Max. Gate Rating 6 * 6 * IRF99PbF HEXFET Power MOSFET R DS(on) max 2V Q 3.4m:@ = V A Q2 9.3m:@ = V 2A ' ' ' ' PD A SO-8 Absolute Maximum Ratings Parameter Q Max. Q2 Max. Units Drain-to-Source Voltage 2 V Gate-to-Source Voltage ± T A Continuous Drain V T A = 7 C Continuous Drain V A M Pulsed Drain Current c P A Power Dissipation 2. W P A = 7 C Power Dissipation Linear Derating Factor.3.6 W/ C Operating Junction and -55 to 5 C Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-Drain Lead 42 C/W R θja Junction-to-Ambient fg 62.5 Notes through are on page 7/23/8

2 IRF99PbF (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BS Drain-to-Source Breakdown Voltage Q&Q2 2 V = V, = 25µA ΒS/ Breakdown Voltage Temp. Coefficient Q.6 V/ C Reference to 25 C, = ma Q2.4 Q = V, = A e R DS(on) Static Drain-to-Source On-Resistance mω = 4.5V, = 8.3A e Q = V, = 2A e 9..3 = 4.5V, = 9.8A e (th) Gate Threshold Voltage Q&Q V =, = 25µA (th)/ Gate Threshold Voltage Coefficient Q -4.9 mv/ C Q2-5. SS Drain-to-Source Leakage Current Q&Q2. µa = 6V, = V Q&Q2 = 6V, = V, I GSS Gate-to-Source Forward Leakage Q&Q2 na = 2V Gate-to-Source Reverse Leakage Q&Q2 - = -2V gfs Forward Transconductance Q 9 S = V, = 8.3A Q2 27 = V, = 9.8A Q g Total Gate Charge Q 7.4 Q Q gs Pre-Vth Gate-to-Source Charge Q 2.6 Q Q2 4.3 = V Q gs2 Post-Vth Gate-to-Source Charge Q.85 nc = 4.5V, = 8.3A Q2.4 Q gd Gate-to-Drain Charge Q 2.5 Q2 Q2 5.4 = V Q godr Gate Charge Overdrive Q.5 = 4.5V, = 9.8A Q2 3.9 Q sw Switch Charge (Q gs2 Q gd) Q 3.4 Q2 6.8 Q oss Output Charge Q 4. nc = V, = V Q2 8.7 t d(on) Turn-On Delay Time Q 6.3 Q Q2 8.3 V DD = 6V, = 4.5V t r Rise Time Q = 8.3A Q2 4 ns t d(off) Turn-Off Delay Time Q 9.2 Q2 Q2 5 V DD = 6V, = 4.5V t f Fall Time Q 4.5 = 9.8A Q2 7.5 Clamped Inductive Load C iss Input Capacitance Q 9 Q2 86 = V C oss Output Capacitance Q 29 pf = V Q2 6 ƒ =.MHz C rss Reverse Transfer Capacitance Q 4 Q2 3 Avalanche Characteristics Parameter Typ. Q Max. Q2 Max. Units E AS Single Pulse Avalanche Energy d mj I AR Avalanche Current c A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current Q&Q2 2.5 A MOSFET symbol D (Body Diode) showing the I SM Pulsed Source Current Q 83 A integral reverse G (Body Diode)c Q2 98 p-n junction diode. S V SD Diode Forward Voltage Q. V, I S = 8.3A, = V e Q2., I S = 9.8A, = V e t rr Reverse Recovery Time Q 7 ns Q, I F = 8.3A, Q V DD = V, di/dt = A/µs e Q rr Reverse Recovery Charge Q nc Q2, I F = 9.8A, Q V DD = V, di/dt = A/µs e 2

3 , Drain-to-Source Current (Α), Drain-to-Source Current (Α), Drain-to-Source Current (A), Drain-to-Source Current (A), Drain-to-Source Current (A), Drain-to-Source Current (A) Typical Characteristics IRF99PbF Q - Control FET Q2 - Synchronous FET VGS VGS TOP V 8.V 5.V 4.5V 4.V 3.5V 3.V BOTTOM 2.5V TOP V 5.V 4.5V 4.V 3.5V 3.V 2.8V BOTTOM 2.5V. 2.5V 6µs PULSE WIDTH Tj.., Drain-to-Source Voltage (V) Fig. Typical Output Characteristics. 2.5V 6µs PULSE WIDTH Tj.., Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics VGS VGS TOP V TOP V 8.V 5.V 5.V 4.5V 4.V 4.5V 4.V 3.5V 3.5V 3.V 3.V 2.8V BOTTOM 2.5V BOTTOM 2.5V 2.5V 2.5V. 6µs PULSE WIDTH Tj = 5 C. 6µs PULSE WIDTH Tj = 5 C.., Drain-to-Source Voltage (V), Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics = 5 C = 5 C = V = V. 6µs PULSE WIDTH. 6µs PULSE WIDTH , Gate-to-Source Voltage (V), Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics 3

4 , Drain-to-Source Current (A), Drain-to-Source Current (A), Gate-to-Source Voltage (V), Gate-to-Source Voltage (V) C, Capacitance(pF) C, Capacitance(pF) IRF99PbF Q - Control FET Typical Characteristics Q2 - Synchronous FET = V, f = MHZ = V, f = MHZ C iss = C gs C gd, C ds SHORTED C iss = C gs C gd, C ds SHORTED C rss = C gd C rss = C gd C oss = C ds C gd C oss = C ds C gd C iss C iss C oss C oss C rss C rss, Drain-to-Source Voltage (V), Drain-to-Source Voltage (V) Fig 7. Typical Capacitance Vs.Drain-to-Source Voltage Fig 8. Typical Capacitance Vs.Drain-to-Source Voltage = 8.3A = 6V = V = 9.8A = 6V = V Q G Total Gate Charge (nc) Q G Total Gate Charge (nc) Fig. 9. Gate-to-Source Voltage vs Typical Gate Charge Fig.. Gate-to-Source Voltage vs Typical Gate Charge OPERATION IN THIS AREA LIMITED BY R DS (on) OPERATION IN THIS AREA LIMITED BY R DS (on) µsec µsec T A Tj = 5 C Single Pulse msec msec., Drain-to-Source Voltage (V) Fig. Maximum Safe Operating Area., Drain-to-Source Voltage (V) Fig 2. Maximum Safe Operating Area 4 T A Tj = 5 C Single Pulse msec msec

5 R DS(on), Drain-to-Source On Resistance (Normalized) R DS(on), Drain-to-Source On Resistance (Normalized) Q - Control FET Typical Characteristics IRF99PbF Q2 - Synchronous FET.5 = A = V.5 = 2A = V , Junction Temperature ( C), Junction Temperature ( C) Fig 3. Normalized On-Resistance vs. Temperature Fig 4. Normalized On-Resistance vs. Temperature I SD, Reverse Drain Current (A) = 5 C I SD, Reverse Drain Current (A) = 5 C = V = V V SD, Source-to-Drain Voltage (V) Fig 5. Typical Source-Drain Diode Forward Voltage V SD, Source-to-Drain Voltage (V) Fig 6. Typical Source-Drain Diode Forward Voltage R DS(on), Drain-to -Source On Resistance (mω) I = A D T J R DS(on), Drain-to -Source On Resistance (mω) = 2A T J T J , Gate -to -Source Voltage (V), Gate -to -Source Voltage (V) Fig 7. Typical On-Resistance vs. Gate Voltage Fig 8. Typical On-Resistance vs. Gate Voltage 5

6 IRF99PbF 2 Q - Control FET Typical Characteristics 4 2 Q2 - Synchronous FET, Drain Current (A) 8 6 4, Drain Current (A) T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temperature 2.5 T A, Ambient Temperature ( C) Fig 2. Maximum Drain Current vs. Ambient Temperature 2.5 (th) Gate threshold Voltage (V) 2..5 = 25µA (th) Gate threshold Voltage (V) 2..5 = 25µA , Temperature ( C ) Fig 2. Threshold Voltage vs. Temperature , Temperature ( C ) Fig 22. Threshold Voltage vs. Temperature E AS, Single Pulse Avalanche Energy (mj) TOP 2.2A 2.6A BOTTOM 8.3A E AS, Single Pulse Avalanche Energy (mj) TOP 5.5A 6.2A BOTTOM 9.8A Starting, Junction Temperature ( C) Starting, Junction Temperature ( C) Fig 23. Maximum Avalanche Energy Fig 24. Maximum Avalanche Energy vs. Drain Current vs. Drain Current 6

7 IRF99PbF Thermal Response ( Z thja )... D = SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri E-6 E t, Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja Tc Current Regulator Same Type as D.U.T. 5KΩ L 5V DRIVER tp V (BR)DSS 2V.2µF.3µF D.U.T. V - DS R G 2V VGS tp D.U.T I AS.Ω - V DD A I AS 3mA I G Current Sampling Resistors Fig 26. Unclamped Inductive Test Circuit and Waveform Fig 27. Gate Charge Test Circuit L D V DD - 9% D.U.T % Pulse Width < µs Duty Factor <.% t d(on) t r t d(off) t f Fig 28. Switching Time Test Circuit Fig 29. Switching Time Waveforms 7

8 IRF99PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt D = P.W. Period =V V DD * R G dv/dt controlled by RG V DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * = 5V for Logic Level Devices Fig 3. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 3. Gate Charge Waveform 8

9 IRF99PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' % ',,&(6, $;,//,(7(56, $; $ $ $ ( >@ $ E F ' ( H %$6,& %$6,& H %$6,& %$6,& ; H. / \ ƒ ƒ ƒ ƒ H $.[ƒ & \ ;E $ >@ ;/ ;F >@ & $ % 27(6 ',(6,2,* 72/(5$&,*3(5$6(< &2752//,*',(6,2,//,(7(5 ',(6,26$5(62:,,//,(7(56>,&(6@ 287/,(&2)25672-('(&287/,(6$$ ',(6,2'2(627,&/8'(2/' ,26 2/' ,262772(;&(('>@ ',(6,2'2(627,&/8'(2/' ,26 2/' ,262772(;&(('>@ ',(6,2,67(/(*72)/($')2562/'(5,*72 $68%675$7( >@ )22735,7 ;>@ ;>@ ;>@ SO-8 Part Marking Information (;$3/(7,6,6$,5)26)(7,7(5$7,2$/ 5(&7,),(5 /2*2 ) ;;;; '$7(&2'(<:: 3 ',6*$7(6/($')5(( 352'8&7237,2$/ < /$67',*,72)7(<($5 :: :((. $ $66(%/<6,7(&2'( /27&2'( 3$578%(5 Note: For the most current drawing please refer to IR website at: 9

10 IRF99PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.4 (.488 ) Note: For the most current drawing please refer to IR website at: Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting, Q: L =.95mH R G = 25Ω, I AS = 8.3A; Q2: L =.54mH R G = 25Ω, I AS = 9.8A. ƒ Pulse width 4µs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at approximately 9 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.7/28

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