Lower Conduction Losses
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- Marshall O’Connor’
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1 PD B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical) Bus in-rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<.5 mω) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8 C/W) Enable better thermal dissipation % Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity IRFH5250TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5250TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Note Absolute Maximum Ratings V DS V GS Drain-to-Source Voltage Gate-to-Source Voltage Parameter Max. 25 ± 20 Units V I T A = 25 C I T A = 70 C I T mb = 25 C I T mb = C I DM P A = 25 C P mb = 25 C T J T STG Continuous Drain Current, V 0V Continuous Drain Current, V 0V Continuous Drain Current, V 0V Continuous Drain Current, V 0V Pulsed Drain Current c Power Dissipation g Power Dissipation g Linear Derating Factor g Operating Junction and Storage Temperature Range 45 3 h h to 50 A W W/ C C Notes through are on page /2/2
2 IRFH5250PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = 0V, I D = 250μA ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.02 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 0V, e mω.4.75 V GS = 4.5V, e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 50μA ΔV GS(th) Gate Threshold Voltage Coefficient -6.3 mv/ C I DSS I GSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage 5.0 Gate-to-Source Reverse Leakage 50 - μa na gfs Forward Transconductance 8 S Q g Total Gate Charge 0 nc Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 3 Q gs2 Post-Vth Gate-to-Source Charge 7.8 Q gd Gate-to-Drain Charge 7 nc Q godr Gate Charge Overdrive 5 Q sw Switch Charge (Q gs2 Q gd ) 25 Q oss Output Charge 36 nc R G Gate Resistance.3 Ω t d(on) Turn-On Delay Time 28 t r Rise Time 46 t d(off) Turn-Off Delay Time 30 ns t f Fall Time 9 C iss Input Capacitance 774 C oss Output Capacitance 758 pf C rss Reverse Transfer Capacitance 828 Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 468 mj I AR Avalanche Current c 50 A Diode Characteristics V DS = 20V, V GS = 0V V DS = 20V, V GS = 0V, T J = 25 C V GS = 20V V GS = -20V V DS = 3V, V GS = 0V, V DS = 3V, V DS = 3V V GS = 4.5V V DS = 6V, V GS = 0V V DD = 3V, V GS = 4.5V R G =.8Ω V GS = 0V V DS = 3V ƒ =.0MHz I S I SM V SD Diode Forward Voltage.0 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc t on Parameter Min. Typ. Max. Units Continuous Source Current h (Body Diode) A Pulsed Source Current 400 (Body Diode)Ãc Forward Turn-On Time Time is dominated by parasitic Inductance Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 50A, V GS = 0V e T J = 25 C, I F = 50A, V DD = 3V di/dt = 200A/μs eã G D S Thermal Resistance Parameter Typ. Max. Units R θj-mb Junction-to-Mounting Base R θjc (Top) Junction-to-Case f 5 C/W R θja Junction-to-Ambient g 35 R θja (<0s) Junction-to-Ambient g 2 2
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFH5250PbF 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V BOTTOM 2.7V 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V BOTTOM 2.7V 0 2.7V 2.7V 60μs PULSE WIDTH Tj = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 60μs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics V GS = 0V 0 0. T J = 50 C T J = 25 C V DS = 5V 60μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss V DS = 20V V DS = 3V C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage 3
4 V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRFH5250PbF 0 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0 0 T J = 50 C μsec msec T J = 25 C V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Limited by Package Tc = 25 C Tj = 50 C Single Pulse 0msec DC V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 300 Limited By Package T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature.0 I D =.0A ID =.0mA ID = 500μA ID = 50μA T J, Temperature ( C ) Fig 0. Threshold Voltage Vs. Temperature D = Thermal Response ( Z thjc ) C/W 0.00 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4
5 R DS(on), Drain-to -Source On Resistance (m Ω) Avalanche Current (A) E AS, Single Pulse Avalanche Energy (mj) IRFH5250PbF I D TOP 8A 24A BOTTOM 50A 2 T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On-Resistance vs. Gate Voltage Fig 3. Maximum Avalanche Energy vs. Drain Current 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 25 C and Tstart =25 C (Single Pulse) 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25 C and Tstart = 25 C..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 4. Typical Avalanch Current vs. Pulsewidth 5
6 IRFH5250PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =0V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 5. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T IAS 0.0Ω - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. - V DD V DS 90% V0V GS Pulse Width µs Duty Factor 0. 0% V GS t d(on) t r t d(off) t f Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs 0 K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform 6
7 IRFH5250PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-54 at PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: 7
8 IRFH5250PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Industrial (per JEDEC JES D47F guidelines ) MS L PQFN 5mm x 6mm (per JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.37mH, R G = 25Ω, I AS = 50A. ƒ Pulse width 400μs; duty cycle 2%. R θ is measured at T J of approximately 90 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to A by production test capability Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 0N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information.09/
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
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PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
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l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
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I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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