Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques

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1 IRF794PbF HEXFET Power MOSFET V DS 3 V R DS(on) max Q (@V GS = V).2 R DS(on) max Q2 (@V GS = V).8 Q g (typical) Q 7.5 Q g (typical) Q2 4 I D(@TA = 25 C)Q 7. I D(@TA = 25 C)Q2 mω nc A G S2 S2 G D S / D2 S / D2 S / D2 SO8 Applications l Dual SO8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and SetTop Box Features Benefits Industrystandard pinout SO8 Package MultiVendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, HalogenFree Environmentally Friendlier MSL, Industrial qualification Increased Reliability Base Part Number IRF794PbF Package Type SO8 Standard Pack Form Quantity Orderable Part Number Tube/Bulk 95 IRF794PbF Tape and Reel 4 IRF794TRPbF Absolute Maximum Ratings Parameter Q Max. Q2 Max. Units V DS DraintoSource Voltage 3 V V GS GatetoSource Voltage ± 2 I T A = 25 C Continuous Drain Current, V V 7. I T A = 7 C Continuous Drain Current, V V. 8.9 A I DM Pulsed Drain Current c 89 P A = 25 C Power Dissipation.4 2. W P A = 7 C Power Dissipation.9.3 Linear Derating Factor.. W/ C T J Operating Junction and 55 to 5 C T STG Storage Temperature Range Thermal Resistance Parameter Q Max. Q2 Max. Units R θjl JunctiontoDrain Lead g 2 2 C/W R θja JunctiontoAmbient fg International Rectifier Submit Datasheet Feedback May 9, 24

2 IRF794PbF (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS DraintoSource Breakdown Voltage Q&Q2 3 V V GS = V, I D = 25μA ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient Q.24 V/ C Reference to 25 C, I D = ma Q2.24 Q.4.2 V GS = V, I D = 7.A e R DS(on) Static DraintoSource OnResistance mω V GS = 4.5V, I D =.A e Q V GS = V, I D = A e 3 V GS = 4.5V, I D = 8.8A e V GS(th) Gate Threshold Voltage Q&Q V Q: V DS = V GS, I D = 25μA ΔV GS(th) /ΔT J Gate Threshold Voltage Coefficient Q 5. mv/ C Q2: V DS = V GS, I D = 5μA Q2 5. I DSS DraintoSource Leakage Current Q&Q2. μa V DS = 24V, V GS = V Q&Q2 5 V DS = 24V, V GS = V, I GSS GatetoSource Forward Leakage Q&Q2 na V GS = 2V GatetoSource Reverse Leakage Q&Q2 V GS = 2V gfs Forward Transconductance Q 7 S V DS = 5V, I D =.A Q2 23 V DS = 5V, I D = 8.8A Q g Total Gate Charge Q 7.5 Q2 4 2 Q gs PreVth GatetoSource Charge Q 2.2 Q Q2 3.7 V DS = 5V Q gs2 PostVth GatetoSource Charge Q. nc V GS = 4.5V, I D =.A Q2. Q gd GatetoDrain Charge Q 2.5 Q2 Q2 4.8 V DS = 5V Q godr Gate Charge Overdrive Q 2.2 V GS = 4.5V, I D = 8.8A Q2 4.4 Q sw Switch Charge (Q gs2 Q gd ) Q 3. Q2 5.9 Q oss Output Charge Q 4.5 nc V DS = V, V GS = V Q2 9. R G Gate Resistance Q Ω Q t d(on) TurnOn Delay Time Q.9 Q Q2 7.8 V DD = 5V, V GS = 4.5V t r Rise Time Q 7.3 I D =.A Q2 ns t d(off) TurnOff Delay Time Q Q2 Q2 5 V DD = 5V, V GS = 4.5V t f Fall Time Q 3.2 I D = 8.8A Q2 4. Clamped Inductive Load C iss Input Capacitance Q 9 Q2 78 V GS = V C oss Output Capacitance Q 9 pf V DS = 5V Q2 39 ƒ =.MHz C rss Reverse Transfer Capacitance Q 94 Q2 8 Avalanche Characteristics Parameter Typ. Q Max. Q2 Max. Units E AS Single Pulse Avalanche Energy d 4 25 mj I AR Avalanche Current c. 8.8 A Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current Q.8 A (Body Diode) Q2 2.5 I SM Pulsed Source Current Q A (Body Diode)c Q2 88 V SD Diode Forward Voltage Q. V Q2. t rr Reverse Recovery Time Q 7 ns Q2 24 Q rr Reverse Recovery Charge Q nc Q2.9 Conditions MOSFET symbol showing the integral reverse pn junction diode., I S =.A, V GS = V e, I S = 8.8A, V GS = V e Q, I F =.A, V DD = 5V, di/dt = A/μs e Q2, I F = 8.8A, V DD = 5V, di/dt = A/μs e International Rectifier Submit Datasheet Feedback May 9, 24

3 I D, DraintoSource Current (Α) I D, DraintoSource Current (Α) I D, DraintoSource Current (A) I D, DraintoSource Current (A) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRF794PbF Typical Characteristics Q Control FET Q2 Synchronous FET VGS TOP V 8.V 5.V 4.5V 4.V 3.5V 3.V BOTTOM 2.5V 2.5V VGS TOP V 8.V 5.V 4.5V 4.V 3.5V 3.V BOTTOM 2.5V 2.5V μs PULSE WIDTH Tj = 25 C μs PULSE WIDTH Tj = 25 C Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5V VGS TOP V 8.V 5.V 4.5V 4.V 3.5V 3.V BOTTOM 2.5V 2.5V VGS TOP V 8.V 5.V 4.5V 4.V 3.5V 3.V BOTTOM 2.5V μs PULSE WIDTH Tj = 5 C μs PULSE WIDTH Tj = 5 C Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics... T J = 5 C. T J = 5 C.. V DS = 5V μs PULSE WIDTH V GS, GatetoSource Voltage (V) V DS = 5V μs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 5. Typical Transfer Characteristics Fig. Typical Transfer Characteristics International Rectifier Submit Datasheet Feedback May 9, 24

4 I D, DraintoSource Current (A) I D, DraintoSource Current (A) V GS, GatetoSource Voltage (V) V GS, GatetoSource Voltage (V) C, Capacitance (pf) C, Capacitance (pf) IRF794PbF Typical Characteristics Q Control FET Q2 Synchronous FET V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C rss = C gd C oss = C ds C gd Ciss Ciss Coss Crss Coss Crss Fig 7. Typical Capacitance vs. DraintoSource Voltage Fig 8. Typical Capacitance vs. DraintoSource Voltage 2 I D =.A V DS = 24V VDS= 5V 2 I D = 8.8A V DS = 24V VDS= 5V Q G Total Gate Charge (nc) Fig 9. Typical Gate Charge vs. GatetoSource Voltage T A = 25 C OPERATION IN THIS AREA LIMITED BY R DS (on) msec msec msec μsec Tj = 5 C Single Pulse V DS, DraintoSource Voltage (V) Fig. Maximum Safe Operating Area Q G Total Gate Charge (nc) Fig. Typical Gate Charge vs. GatetoSource Voltage Tj = 5 C Single Pulse V DS, DraintoSource Voltage (V) Fig 2. Maximum Safe Operating Area International Rectifier Submit Datasheet Feedback May 9, 24 T A = 25 C OPERATION IN THIS AREA LIMITED BY R DS (on) msec msec msec μsec

5 I SD, Reverse Drain Current (A) R DS (on), Drainto Source On Resistance (mω) R DS(on), DraintoSource On Resistance (Normalized) R DS(on), DraintoSource On Resistance I SD, Reverse Drain Current (A) R DS (on), Drainto Source On Resistance (mω) (Normalized) IRF794PbF Typical Characteristics Q Control FET Q2 Synchronous FET.5 I D = 7.A V GS = V.5 I D = A V GS = V T J, Junction Temperature ( C) Fig 3. Normalized OnResistance vs. Temperature T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature.. T J = 5 C. T J = 5 C.. V GS = V V SD, SourcetoDrain Voltage (V) Fig 5. Typical SourceDrain Diode Forward Voltage V GS = V V SD, SourcetoDrain Voltage (V) Fig. Typical SourceDrain Diode Forward Voltage 4 I D = 7.A 25 I D = A V GS, GatetoSource Voltage (V) V GS, GatetoSource Voltage (V) Fig 7. Typical OnResistance vs.gate Voltage Fig 8. Typical OnResistance vs.gate Voltage International Rectifier Submit Datasheet Feedback May 9, 24

6 E AS, Single Pulse Avalanche Energy (mj) E AS, Single Pulse Avalanche Energy (mj) V GS(th) Gate threshold Voltage (V) V GS(th) Gate threshold Voltage (V) I D, Drain Current (A) I D, Drain Current (A) IRF794PbF Typical Characteristics Q Control FET Q2 Synchronous FET T J, Ambient Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temp. 2. Fig 2. Maximum Drain Current vs. Ambient Temp T J, Ambient Temperature ( C) I D = 25μA.8 I D = 25μA T J, Temperature ( C ) Fig 2. Threshold Voltage vs. Temperature T J, Temperature ( C ) Fig 22. Threshold Voltage vs. Temperature I D TOP.34A.48A BOTTOM.A 8 I D TOP.57A.77A BOTTOM 8.8A Starting T J, Junction Temperature ( C) Starting T J, Junction Temperature ( C) Fig 23. Maximum Avalanche Energy vs. Drain Current Fig 24. Maximum Avalanche Energy vs. Drain Current 24 International Rectifier Submit Datasheet Feedback May 9, 24

7 IRF794PbF Thermal Response ( Z thja ).. D = SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri E E5... t, Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, JunctiontoAmbient (Q) τ C τ Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja Tc D =.5 Thermal Response ( Z thja ) SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri E E5... t, Rectangular Pulse Duration (sec) Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja Tc Fig 2. Maximum Effective Transient Thermal Impedance, JunctiontoAmbient (Q2) τ C τ Fig 27. Layout Diagram International Rectifier Submit Datasheet Feedback May 9, 24

8 IRF794PbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω V DD A I AS Fig 29a. Unclamped Inductive Test Circuit Fig 29b. Unclamped Inductive Waveforms L D V DS V DD V DS 9% D.U.T % V GS Pulse Width < μs Duty Factor < % V GS t d(on) t r t d(off) t f Fig 3a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. Fig 3b. Switching Time Waveforms Vds Id 5KΩ Vgs 2V.2μF.3μF D.U.T. V DS V GS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 3a. Gate Charge Test Circuit Fig 3b. Gate Charge Waveform International Rectifier Submit Datasheet Feedback May 9, 24

9 IRF794PbF SO8 Package Outline Dimensions are shown in milimeters (inches) A E X D e B H.25 [.] A DIM INCHES MILLIMET ERS MIN MAX MIN MAX A A b c D E e e H K L y BASIC.27 BASIC.25 BASIC.35 BASIC e A C y K x 45 SO8 Part Marking 8X b A.25 [.] C A B. [.4] NOT ES:. DIMENS IONING & TOLERANCING PER ASME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS 2AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 5 [.]. DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED.25 [.]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 8X L 8X c 7.4 [.255] 3X.27 [.5] F OOT PRINT 8X.72 [.28] 8X.78 [.7] EXAMPLE: THIS IS AN IRF7 (MOSFET) INTERNATIONAL RECTIFIER LOGO XXXX F7 DATE CODE (YWW) P = DESIGNATES LEADFREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback May 9, 24

10 IRF794PbF SO8 Tape and Reel (Dimensions are shown in millimeters (inches)) TERMINAL NUMBER 2.3 (.484 ).7 (.4 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA48 & EIA (.5 ) 2.4 (.488 ) Note: For the most current drawing please refer to IR website at Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting, Q: L = 7.7mH, R G = 25Ω, I AS =.A; Q2: L =.5mH, R G = 25Ω, I AS = 8.8A. ƒ Pulse width 4μs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J approximately 9 C. Qualification information Qualification level Industrial (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS compliant SO8 MS L (per JEDE C JS TD2D ) Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback May 9, 24