100% Rg tested Increased Reliability
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1 V DS 20 V V gs max ± 12 V R DS(on) max (@V GS = 4.5V) 3.0 (@V GS = 2.5V) 4.0 Q g typ 44 nc 80i A I D (@T c(bottom) = 25 C) mω HEXFET Power MOSFET PQFN 5X6 mm Applications Battery Protection Switch Features and Benefits Features Benefits Low Thermal Resistance to PCB (< 2.4 C/W) Enable better thermal dissipation % Rg tested Increased Reliability Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity Note IRLH6224TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRLH6224TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice # 259 Absolute Maximum Ratings V DS V GS I T A = 25 C I T A = 70 C I T C(Bottom) = 25 C I T C(Bottom) = C I T C = 25 C I DM P A = 25 C P C(Bottom) = 25 C T J T STG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V Continuous Drain Current, V V (Package Limited) Pulsed Drain Current c Power Dissipation g Power Dissipation g Linear Derating Factor g Operating Junction and Storage Temperature Range Max. 20 ± hi 67h 80i to 150 Units V A W W/ C C Notes through are on page International Rectifier Submit Datasheet Feedback July 7, 2015
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 20 V ΔΒV DSS/Δ T J Breakdown Voltage Temp. Coefficient 5.0 mv/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 50μA Δ V GS(th) Gate Threshold Voltage Coefficient -4.2 mv/ C I DSS Drain-to-Source Leakage Current 1 V DS = 16V, V GS = 0V μa 150 V DS = 16V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage V GS = 12V na Gate-to-Source Reverse Leakage - V GS = -12V gfs Forward Transconductance 150 S Q g Total Gate Charge 86 nc Q g Total Gate Charge 44 Q gs1 Pre-Vth Gate-to-Source Charge 3.8 Q gs2 Post-Vth Gate-to-Source Charge 4.7 Q gd Gate-to-Drain Charge 8.5 nc Q godr Gate Charge Overdrive 27 Q sw Switch Charge (Q gs2 Q gd) 13 Q oss Output Charge 30 nc R G Gate Resistance 2.0 Ω t d(on) Turn-On Delay Time 9.4 t r Rise Time 23 t d(off) Turn-Off Delay Time 67 ns t f Fall Time 36 C iss Input Capacitance 37 C oss Output Capacitance 50 pf C rs s Reverse Transfer Capacitance 770 Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 125 mj I AR Avalanche Current c 20 A Diode Characteristics I S I SM Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol 67 (Body Diode) showing the A Pulsed Source Current integral reverse 400 p-n junction diode. T J = 25 C, I S = 20A, V GS = 0V e (Body Diode)c V SD Diode Forward Voltage 1.2 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc V GS = 4.5V I D = 20A t on Forward Turn-On Time Time is dominated by parasitic Inductance V DS = V, I D = 20A V GS = V, V DS = 15V, I D = 20A V DS = 16V, V GS = 0V V DD = 15V, V GS = 4.5V I D = 20A R G=1.8Ω V GS = 0V V DS = V Conditions V GS = 0V, I D = 250μA Reference to 25 C, I D = 1.0mA V GS = 4.5V, I D = 20A e V GS = 2.5V, I D = 16A e V DS = V ƒ = 1.0MHz T J = 25 C, I F = 20A, V DD = 15V di/dt = 300A/μs e G D S Thermal Resistance Parameter Typ. Max. Units R θjc (Bottom) Junction-to-Case f 2.4 R θjc (Top) Junction-to-Case f 34 C/W R θja Junction-to-Ambient g 35 R θja (<s) Junction-to-Ambient g International Rectifier Submit Datasheet Feedback July 7, 2015
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRLH6224PbF 0 VGS TOP V 7.00V 4.50V 2.50V 2.30V 2.00V 1.75V BOTTOM 1.50V 0 VGS TOP V 7.00V 4.50V 2.50V 2.30V 2.00V 1.75V BOTTOM 1.50V 1.50V 1.50V 1 60μs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 0 Fig 1. Typical Output Characteristics T J = 150 C 60μs PULSE WIDTH Tj = 150 C V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D = 20A V GS = V T J = 25 C V DS = V 60μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss I D = 20A V DS = 16V V DS = V VDS= 4.0V 0 C oss C rss Q G Total Gate Charge (nc) V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.drain-to-source Voltage Fig 6. Typical Gate Charge vs.gate-to-source Voltage International Rectifier Submit Datasheet Feedback July 7, 2015
4 V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRLH6224PbF 0 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0 T J = 150 C msec μsec T J = 25 C V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1 Limited by Package i Tc = 25 C Tj = 150 C Single Pulse 1msec V DS, Drain-to-Source Voltage (V) DC Fig 8. Maximum Safe Operating Area 120 Limited By Packagei T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature I D = 50μA I D = 250μA 0.6 I D = 1.0mA I D = 1.0A T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) 1E-006 1E t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) International Rectifier Submit Datasheet Feedback July 7, 2015
5 R DS(on), Drain-to -Source On Resistance (mω) E AS, Single Pulse Avalanche Energy (mj) IRLH6224PbF 8 6 I D = 20A I D TOP 5.7A 9.3A BOTTOM 20A T J = 125 C T J = 25 C V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V (BR)DSS 15V tp V DS L DRIVER R G 20V tp D.U.T IAS 0.01Ω - V DD A I AS Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. - V DD V DS 90% VV GS Pulse Width 1 µs Duty Factor 0.1 % V GS t d(on) t r t d(off) t f Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms International Rectifier Submit Datasheet Feedback July 7, 2015
6 - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs 0 1K DUT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform International Rectifier Submit Datasheet Feedback July 7, 2015
7 PQFN 5x6 Outline "E" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: For more information on package inspection techniques, please refer to application note AN-1154: Note: For the most current drawing please refer to IR website at: International Rectifier Submit Datasheet Feedback July 7, 2015
8 PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P 1 DES CRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimension are nominal Package Type Reel Diameter (Inch) QTY Reel Width W1 Ao Bo Ko P1 W Pin 1 Quadrant 5 X 6 PQFN Q1 Note: For the most current drawing please refer to IR website at: International Rectifier Submit Datasheet Feedback July 7, 2015
9 Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F guidelines ) MS L1 PQFN 5mm x 6mm (per JE DE C J-S TD-020D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.63mH, R G = 50Ω, I AS = 20A. ƒ Pulse width 400μs; duty cycle 2%. R θ is measured at T J of approximately 90 C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 80A by die-source to lead-frame bonding technology Revision History Date 5/12/2014 6/2/2015 Comment Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) Updated Tape and Reel on page 8. Updated data sheet based on corporate template. Updated package outline for option E and added package outline for option G on page 7. Updated "IFX" logo on page 1 & 9. Updated tape and reel on page 8. 7/7/2015 Corrected package outline for option E on page 7. IR WORLD HEADQUARTERS: 1 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback July 7, 2015
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRLH6224TRPBF
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PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
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l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationIRF6602/IRF6602TR1 HEXFET Power MOSFET
l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A
HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationStrongIRFET IRFB7740PbF
I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationIRF6668PbF IRF6668TRPbF
Typical R DS(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIndustry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques
IRF794PbF HEXFET Power MOSFET V DS 3 V R DS(on) max Q (@V GS = V).2 R DS(on) max Q2 (@V GS = V).8 Q g (typical) Q 7.5 Q g (typical) Q2 4 I D(@TA = 25 C)Q 7. I D(@TA = 25 C)Q2 mω nc A G S2 S2 G2 2 3 4 8
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRFS4127PbF IRFSL4127PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More information8 S1, D2. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode Ideal for Synchronous Buck DC-DC Converters Up to A Peak Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier D D 2
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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