Orderable Part Number Form Quantity IRFHM8334PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8334TRPbF
|
|
- Sherman Henry
- 5 years ago
- Views:
Transcription
1 V DSS 30 V V GS max ±20 V R DS(on) max 9.0 (@ V GS = V) m (@ V GS = 4.5V) 13.5 Qg (typical) 7.1 nc I D (@T C (Bottom) = 25 C) 25 A HEXFET Power MOSFET S G S S D D D D D PQFN 3.3X3.3 mm Applications Control MOSFET for high frequency buck converter Features Benefits Low Thermal Resistance to PCB (<4.5 C/W) Enable better Thermal Dissipation Low Profile (<1.2mm) Increased Power Density Industry-Standard Pinout results in Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFHM8334PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ± 20 V I T A = 25 C Continuous Drain Current, V V 13 I T C(Bottom) = 25 C Continuous Drain Current, V V 43 I T C(Bottom) = C Continuous Drain Current, V V 27 I T C = 25 C Continuous Drain Current, V V 25 (Source Bonding Technology Limited) I DM Pulsed Drain Current 176 P A = 25 C Power Dissipation 2.7 P C(Bottom) = 25 C Power Dissipation 28 Linear Derating Factor W/ C T J Operating Junction and -55 to T STG Storage Temperature Range A W C Notes through are on page
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA BV DSS / T J Breakdown Voltage Temp. Coefficient 21 mv/ C Reference to 25 C, I D = 1.0mA R DS(on) Static Drain-to-Source On-Resistance V GS = V, I D = 20A m V GS = 4.5V, I D = 16A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA V GS(th) Gate Threshold Voltage Coefficient -6.6 mv/ C I DSS Drain-to-Source Leakage Current 1.0 V DS = 24V, V GS = 0V µa 150 V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage V GS = 20V na Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 44 S V DS = V, I D = 20A Q g Total Gate Charge 15 nc V GS = V, V DS = 15V, I D = 20A Q g Total Gate Charge Q gs1 Pre-Vth Gate-to-Source Charge 2.5 V DS = 15V Q gs2 Post-Vth Gate-to-Source Charge 1.0 nc V GS = 4.5V Q gd Gate-to-Drain Charge 2.3 I D = 20A Q godr Gate Charge Overdrive 1.3 Q sw Switch Charge (Q gs2 + Q gd ) 3.3 Q oss Output Charge 5.7 nc V DS = 16V, V GS = 0V R G Gate Resistance 1.2 t d(on) Turn-On Delay Time 8.3 V DD = 15V, V GS = 4.5V t r Rise Time 14 ns I D = 20A t d(off) Turn-Off Delay Time 7.0 R G =1.8 t f Fall Time 4.6 C iss Input Capacitance 1180 V GS = 0V C oss Output Capacitance 260 pf V DS = V C rss Reverse Transfer Capacitance 1 ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 35 mj Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 25 (Body Diode) showing the A I SM Pulsed Source Current integral reverse 176 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T J = 25 C, I S = 20A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 20A, V DD = 15V Q rr Reverse Recovery Charge nc di/dt = 380A/µs G D S Thermal Resistance Parameter Typ. Max. Units R JC (Bottom) Junction-to-Case 4.5 R JC (Top) Junction-to-Case 44 C/W R JA Junction-to-Ambient 47 R JA (<s) Junction-to-Ambient
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V BOTTOM 2.5V VGS TOP V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V BOTTOM 2.5V V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 1 2.5V 60µs PULSE WIDTH Tj = 150 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 20A V GS = V 1.4 T J = 150 C 1.2 T J = 25 C V DS = 15V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 0 V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = 20A V DS = 24V V DS = 15V V DS = 6.0V C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4 V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) µsec T J = 150 C Limited by package 1msec T J = 25 C 1 msec V GS = 0V V SD, Source-to-Drain Voltage (V) 0.1 Tc = 25 C DC Tj = 150 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area Limited By Source Bonding Technology I D = 25µA I D = 250µA I D = 1.0mA I D = 1.0A T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Drain-to Source Breakdown Voltage D = Thermal Response ( Z thjc ) C/W 0.01 SINGLE PULSE ( THERMAL RESPONSE ) E-006 1E t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 R DS(on), Drain-to -Source On Resistance (m ) I D = 20A T J = 125 C T J = 25 C E AS, Single Pulse Avalanche Energy (mj) I D TOP 4.3A 9.0A BOTTOM 20A V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V (BR)DSS 15V tp V DS L DRIVER R G 20V tp D.U.T I AS V DD A I AS Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms
6 Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs VDD Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform
7 PQFN 3.3 x 3.3 Outline C Package Details PQFN 3.3 x 3.3 Outline G Package Details # # For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: For more information on package inspection techniques, please refer to application note AN-1154:
8 PQFN 3.3mm x 3.3mm Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN 1 IDENTIFIER XXXX?YWW? XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at PQFN 3.3mm x 3.3mm Outline Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE DIMENSION (MM) DIMENSION (INCH) CODE MIN MAX MIN MAX Ao Bo Ko P W W Qty 4000 Reel Diameter 13 Inches CODE Ao Bo Ko W P1 DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at
9 Qualification Information Qualification Level Consumer (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS Compliant PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release. Notes: Starting T J = 25 C, L = 0.18mH, R G = 50, I AS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at T J of approximately 90 C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology. Pulse drain current is limited by source bonding technology
10 Revision History Date 6/5/2014 Updated schematic on page 1. Updated tape and reel on page 8. 7/1/2014 Remove SAWN package outline on page 7. 2/23/2016 Comments Updated datasheet with corporate template Corrected typo switch time test condition from V DD = 30V to V DD = 15V on page2 Updated package outline to reflect the PCN # (241-PCN30-Public) for Option C and Option G on page 7. Published by Infineon Technologies AG München, Germany Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
IRFHM8326PbF. HEXFET Power MOSFET. V DSS 30 V V GS max ±20 V R DS(on) max 4.7 V GS = 10V)
V DSS 30 V V GS max ±20 V R DS(on) max 4.7 (@ V GS = 0V) m (@ V GS = 4.5V) 6.7 Qg (typical) 20 nc I D (@T C (Bottom) = 25 C) 70 A HEXFET Power MOSFET S G S S D D D D D PQFN 3.3X3.3 mm Applications Charge
More informationLower Conduction Losses
IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More information100% Rg tested Increased Reliability
V DS 20 V V gs max ± 12 V R DS(on) max (@V GS = 4.5V) 3.0 (@V GS = 2.5V) 4.0 Q g typ 44 nc 80i A I D (@T c(bottom) = 25 C) mω HEXFET Power MOSFET PQFN 5X6 mm Applications Battery Protection Switch Features
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationAUIRF1324S-7P AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationAUTOMOTIVE GRADE C T STG
AUTOMOTIVE GRADE AUIRFN845 Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
More informationAUTOMOTIVE GRADE. Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationAUTOMOTIVE GRADE. Tube 50 AUIRFS4115-7P Tape and Reel Left 800 AUIRFS4115-7TRL
Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
More informationIR MOSFET StrongIRFET IRL40SC228
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationAUTOMOTIVE GRADE. Tube 50 AUIRFS3004-7P Tape and Reel Left 800 AUIRFS3004-7PTRL
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationIR MOSFET StrongIRFET IRF60R217
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationAUIRFR4105Z AUIRFU4105Z
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationBase Part Number Package Type Standard Pack Orderable Part Number
V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
More informationAUIRLS3034-7P AUTOMOTIVE GRADE. HEXFET Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
More informationAUIRFR540Z AUIRFU540Z
AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z Application Automatic Voltage Regulator (AVR) Solenoid Injection Body Control Low Power Automotive Applications V DSS HEXFET Power MOSFET 0V R DS(on) typ. 22.5m I
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.8 C/W)
PD -97538A IRFH5025PbF HEXFET Power MOSFET V DS 250 V R DS(on) max (@V GS = V) 0 mω Q g (typical) 37 nc R G (typical).6 Ω I D (@T c(bottom) = 25 C) 25 A PQFN 5X6 mm Applications Secondary Side Synchronous
More informationAUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More information100% Rg tested Increased Reliability. Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen
PD -96276 V DS 3 V R DS(on) max (@V GS = V).85 mω Q g (typical) 37 nc R G (typical).5 Ω I D (@T c(bottom) = 25 C) h IRFH53PbF HEXFET Power MOSFET PQFN 5X6 mm pplications OR-ing MOSFET for 2V (typical)
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.32 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z AUIRFZ44ZS D 2 Tube 50 AUIRFZ44ZS Tape and Reel Left 800 AUIRFZ44ZSTRL
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationEasier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen
V DS 4 V PD -9778 IRLH734PbF HEXFET Power MOSFET R DS(on) max (@V GS = V) 3.3 mω Q g (typical) 39 nc I D (@T c(bottom) = 25 C) 5 i PQFN 5X6 mm pplications Secondary Side Synchronous Rectification Inverters
More informationIR MOSFET StrongIRFET IRFP7718PbF
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationAUIRLS3034 AUTOMOTIVE GRADE. HEXFET Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 2.2 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features dvanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS Compliant
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
More informationIRF6641TRPbF DIGITAL AUDIO MOSFET. Key Parameters V DS 200 V R DS(ON) V GS = 10V 51 m Qg typ. 34 nc R G(int) typ. 1.0
Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low R DS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for
More informationAUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110
Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More informationV DSS V GS R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S(on) (m ) IRF6648PbF IRF6648TRPbF RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) Application Specific MOSFETs Optimized for Synchronous Rectification for 5V to 2V outputs Low Conduction
More informationAUTOMOTIVE GRADE. Standard Pack Orderable Part Number AUIRL3705Z TO-220 Tube 50 AUIRL3705Z AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL AUIRL3705ZS D 2 -Pak
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
More informationIR MOSFET StrongIRFET IRF60B217
I D, Drain Current (A) IR MOSFET StrongIRFET IRF6B27 HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.4 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features dvanced Planar Technology Low On-Resistance P-Channel Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS
More informationV DSS R DS(on) max Qg 30V GS = 10V 5.4nC
PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
More informationV DSS V GS R DS(on) R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S(on) (m ) RoHs Compliant Containing No Lead and Bromide Integrated Monolithic Schottky iode Low Profile (
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationStrongIRFET IRFB7546PbF
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D.
PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS
More informationOrderable Part Number IRL100HS121 PQFN 2mm x 2mm Tape and Reel 4000 IRL100HS121. Typical R DS(on) (m )
Target Applications Wireless charging Adapter Telecom Benefits Higher power density designs Higher switching frequency IR MOSFET - Uses OptiMOS TM 5 Chip Reduced parts count wherever 5V supplies are available
More informationPart Number Radiation Level RDS(on) I D IRHLUC7970Z4 100 krads(si) A IRHLUC7930Z4 300 krads(si) A LCC-6
PD-97574A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 6V, DUAL P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).6 -.65A IRHLUC793Z4 3 krads(si).6
More informationStrongIRFET IRL60B216
I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationAbsolute Maximum Ratings (Per Die)
PD-97887 IRHLG7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG7S7 krads(si).33.8a IRHLG7S3
More informationIRHLNM7S7110 2N7609U8
PD-97888 IRHLNM7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.2) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMN7S7 krads(si).29 6.5A IRHLMN7S3
More informationIRHYS9A7130CM JANSR2N7648T3
PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM
More informationIRFF230 JANTX2N6798 JANTXV2N6798
PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationStrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationIRF7MS V, N-CHANNEL HEXFET MOSFET TECHNOLOGY. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) PD-94609A
PD-9469A IRF7MS297 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 75V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF7MS297.55 45A* Description Seventh Generation HEXFET power
More information2N7622U2 IRHLNA797064
PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*
More informationR 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY
PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationAbsolute Maximum Ratings (Per Die)
PD-9778A IRHLG77 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG77 krads(si).285.8a IRHLG73 3 krads(si).285.8a
More informationStrongIRFET IRFB7740PbF
I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationR 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY.
PD-9732D 2N7624U3 IRHLNJ79734 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNJ79734 krads(si).72-22a*
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationIRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary
PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
More informationI D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a
More informationIRF5M V, P-CHANNEL HEXFET MOSFET TECHNOLOGY POWER MOSFET THRU-HOLE (TO-254AA) PD-94155A
PD-9455A IRF5M495 POWER MOSFET THRU-HOLE (TO-254AA) 55V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) I D IRF5M495.3-35A* TO-254AA Description Fifth Generation HEXFET power MOSFETs
More informationIRHNJ63C krads(si) A SMD-0.5
PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3
More informationIRHF57234SE 100 krads(si) A TO-39
PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY
PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE
More informationIRHY63C30CM 300k Rads(Si) A TO-257AA
PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM
More informationIRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary
PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationDirect Drive at High V GS. IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000
PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features
More informationOrdering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,
R DS(on), Drain-to -Source On Resistance (m Ω) I D, Drain Current (A) StrongIRFET TM Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge
More informationIRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, N-CHANNEL TECHNOLOGY PD-97836
PD-97836 IRHLMS7764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS7764 krads(si).2 45A*
More informationIRFYB9130C, IRFYB9130CM
PD-97896 IRFYB9130C, IRFYB9130CM POWER MOSFET THRU-HOLE (TO-257AA Low-Ohmic Tabless) 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D Eyelets IRFYB9130C 0.30-11.2A Ceramic
More informationIRF6646 DirectFET Power MOSFET
Typical R DS(on) (Ω) V GS, Gate-to-Source Voltage (V) l RoHS compliant containing no lead or bromide l Low Profile (
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationIRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY
PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE
More informationIRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY
PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D
PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationIRHNJ597Z30 JANSR2N7519U3 R 5 30V, P-CHANNEL REF: MIL-PRF-19500/732 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94661C TECHNOLOGY
PD-9466C IRHNJ597Z3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 3V, P-CHANNEL REF: MIL-PRF-95/732 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ597Z3
More informationIRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY
PD-91787J IRHNA57Z6 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57Z6 1 krads(si) 3.5m 75A* IRHNA53Z6 3 krads(si) 3.5m
More informationIRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, P-CHANNEL TECHNOLOGY PD-95860
PD-9586 IRHLMS79764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS79764 krads(si).8-45a*
More informationIRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY
PD-91852J IRHNA5764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA5764 1 krads(si) 5.6m 75A* IRHNA5364 3 krads(si) 5.6m
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRHMS JANSR2N7524T1 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E
PD-9473E IRHMS59764 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) 6V, P-CHANNEL REF: MIL-PRF-95/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number
More informationIRF9910PbF HEXFET Power MOSFET R DS(on) max
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationIRHNA9160 JANSR2N7425U
PD-91433D IRHNA9160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 100V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
More informationAbsolute Maximum Ratings for Each N-Channel Device
PD-967D IRHG7 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHG7 krads(si).6.a IRHG3 3 krads(si).7.a
More informationIRHI7360SE. 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) PD-91446B
PD-91446B IRHI7360SE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHI7360SE 100 krads(si) 0.20
More informationIRHG V, Combination 2N-2P CHANNEL R TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) PD-94246D
PD-94246D IRHG567 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, Combination 2N-2P CHANNEL R TECHNOLOGY 5 Product Summary Part Number Radiation Level RDS(on) I D IRHG567 krads(si).29.6a IRHG563
More information