Lower Conduction Losses

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1 IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and Hot Swap Battery Operated DC Motor Inverters Features Benefits Low R DSon (<0.95 m ) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8 C/W) Enable better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH420PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH420TRPbF Absolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ± 20 V I T A = 25 C Continuous Drain Current, V 0V 49 A I T C(Bottom) = 25 C Continuous Drain Current, V 0V 326 I T C(Bottom) = C Continuous Drain Current, V 0V 206 I T C(Bottom) = 25 C Continuous Drain Current, V 0V (Source Bonding Technology Limited) I DM Pulsed Drain Current 400 P A = 25 C Power Dissipation 3.5 W P C(Bottom) = 25 C Power Dissipation 56 Linear Derating Factor W/ C T J Operating Junction and -55 to + 50 C T STG Storage Temperature Range Notes through are on page International Rectifier Submit Datasheet Feedback March 6, 205

2 IRFH420PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = 0V, I D = 250µA BV DSS / T J Breakdown Voltage Temp. Coefficient 20 mv/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 0V, I D = 50A m V GS = 4.5V, I D = 50A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 50µA V GS(th) Gate Threshold Voltage Coefficient -5.9 mv/ C I DSS Drain-to-Source Leakage Current.0 µa V DS = 20V, V GS = 0V I GSS Gate-to-Source Forward Leakage V GS = 20V na Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 75 S V DS = 3V, I D = 50A Q g Total Gate Charge 94.0 nc V GS = 0V, V DS = 3V, I D = 50A Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge.0 V DS = 3V Q gs2 Post-Vth Gate-to-Source Charge 6.4 nc V GS = 4.5V Q gd Gate-to-Drain Charge 6.0 I D = 50A Q godr Gate Charge Overdrive 2.6 Q sw Switch Charge (Q gs2 + Q gd ) 22.4 Q oss Output Charge 46.0 nc V DS = 6V, V GS = 0V R G Gate Resistance t d(on) Turn-On Delay Time 20 V DD = 3V, V GS = 4.5V t r Rise Time 43 ns I D = 50A t d(off) Turn-Off Delay Time 24 R G =.8 t f Fall Time 9 C iss Input Capacitance 6 V GS = 0V C oss Output Capacitance 700 pf V DS = 3V C rss Reverse Transfer Capacitance 450 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. E AS Single Pulse Avalanche Energy 478 I AR Avalanche Current 50 Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 400 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.0 V T J = 25 C, I S = 50A, V GS = 0V t rr Reverse Recovery Time 3 47 ns T J = 25 C, I F = 50A, V DD = 3V Q rr Reverse Recovery Charge nc di/dt = 400A/µs Thermal Resistance Parameter Typ. Max. Units R JC (Bottom) Junction-to-Case 0.8 R JC (Top) Junction-to-Case 8 C/W R JA Junction-to-Ambient 36 R JA (<0s) Junction-to-Ambient International Rectifier Submit Datasheet Feedback March 6, 205

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFH420PbF 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.V 2.9V 2.7V BOTTOM 2.5V 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.V 2.9V 2.7V BOTTOM 2.5V 0 2.5V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 0 2.5V 60µs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0 R DS(on), Drain-to-Source On Resistance.6 I D = 50A.4 V GS = 0V T J = 50 C.2 0 T J = 25 C.0 V DS = 5V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss C oss I D = 50A V DS = 20V V DS = 3V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier Submit Datasheet Feedback March 6, 205

4 V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRFH420PbF T J = 50 C T J = 25 C 0 OPERATION IN THIS AREA LIMITED BY R DS (on) Limited by package µsec 0 msec V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 Tc = 25 C 0msec Tj = 50 C Single Pulse DC V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Limited by package I D = 50µA I D = 250µA I D =.0mA I D =.0A T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 0. Drain-to Source Breakdown Voltage D = Thermal Response ( Z thjc ) C/W SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case International Rectifier Submit Datasheet Feedback March 6, 205

5 E AS, Single Pulse Avalanche Energy (mj) R DS(on), Drain-to -Source On Resistance (m ) IRFH420PbF I D = 50A I D TOP 5A 24A BOTTOM 50A T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On Resistance vs. Gate Voltage Fig 3. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 0 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25 C and Tstart =25 C (Single Pulse) 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 25 C..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 4. Typical Avalanche Current vs. Pulsewidth International Rectifier Submit Datasheet Feedback March 6, 205

6 IRFH420PbF Fig 5. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T I AS V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 8. Gate Charge Test Circuit Fig 9. Gate Charge Waveform International Rectifier Submit Datasheet Feedback March 6, 205

7 IRFH420PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-36: For more information on package inspection techniques, please refer to application note AN-54: PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback March 6, 205

8 IRFH420PbF PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN ORIENTATION IN TAPE Note: All dimension are nominal Package Type Reel Diameter QTY Reel Width Ao Bo Ko P W Pin Quadrant (Inch) W 5 X 6 PQFN Q Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback March 6, 205

9 IRFH420PbF Qualification Information Qualification Level Industrial (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS Compliant PQFN 5mm x 6mm MSL (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.38mH, R G = 50, I AS = 50A. Pulse width 400µs; duty cycle 2%. R is measured at T J of approximately 90 C. When mounted on inch square PCB (FR-4). Please refer to AN-994 for more details: Calculated continuous current based on maximum allowable junction temperature. Current is limited to A by source bonding technology. Revision History Date 5/7/203 Comments Updated package 3D drawing, on page. Added Continuous Drain Current limited by source bonding technology, on page. Divided note 6 into note 6 & 7, on page 8. /5/203 Release of final data sheet. 3/6/205 Updated package outline and tape and reel on pages 7 and 8. IR WORLD HEADQUARTERS: 0 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback March 6, 205

10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRFH420TRPBF

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