Lower Conduction Losses
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- Giles Singleton
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1 IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and Hot Swap Battery Operated DC Motor Inverters Features Benefits Low R DSon (<0.95 m ) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8 C/W) Enable better thermal dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFH420PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH420TRPbF Absolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ± 20 V I T A = 25 C Continuous Drain Current, V 0V 49 A I T C(Bottom) = 25 C Continuous Drain Current, V 0V 326 I T C(Bottom) = C Continuous Drain Current, V 0V 206 I T C(Bottom) = 25 C Continuous Drain Current, V 0V (Source Bonding Technology Limited) I DM Pulsed Drain Current 400 P A = 25 C Power Dissipation 3.5 W P C(Bottom) = 25 C Power Dissipation 56 Linear Derating Factor W/ C T J Operating Junction and -55 to + 50 C T STG Storage Temperature Range Notes through are on page International Rectifier Submit Datasheet Feedback March 6, 205
2 IRFH420PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = 0V, I D = 250µA BV DSS / T J Breakdown Voltage Temp. Coefficient 20 mv/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 0V, I D = 50A m V GS = 4.5V, I D = 50A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 50µA V GS(th) Gate Threshold Voltage Coefficient -5.9 mv/ C I DSS Drain-to-Source Leakage Current.0 µa V DS = 20V, V GS = 0V I GSS Gate-to-Source Forward Leakage V GS = 20V na Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 75 S V DS = 3V, I D = 50A Q g Total Gate Charge 94.0 nc V GS = 0V, V DS = 3V, I D = 50A Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge.0 V DS = 3V Q gs2 Post-Vth Gate-to-Source Charge 6.4 nc V GS = 4.5V Q gd Gate-to-Drain Charge 6.0 I D = 50A Q godr Gate Charge Overdrive 2.6 Q sw Switch Charge (Q gs2 + Q gd ) 22.4 Q oss Output Charge 46.0 nc V DS = 6V, V GS = 0V R G Gate Resistance t d(on) Turn-On Delay Time 20 V DD = 3V, V GS = 4.5V t r Rise Time 43 ns I D = 50A t d(off) Turn-Off Delay Time 24 R G =.8 t f Fall Time 9 C iss Input Capacitance 6 V GS = 0V C oss Output Capacitance 700 pf V DS = 3V C rss Reverse Transfer Capacitance 450 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. E AS Single Pulse Avalanche Energy 478 I AR Avalanche Current 50 Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 400 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.0 V T J = 25 C, I S = 50A, V GS = 0V t rr Reverse Recovery Time 3 47 ns T J = 25 C, I F = 50A, V DD = 3V Q rr Reverse Recovery Charge nc di/dt = 400A/µs Thermal Resistance Parameter Typ. Max. Units R JC (Bottom) Junction-to-Case 0.8 R JC (Top) Junction-to-Case 8 C/W R JA Junction-to-Ambient 36 R JA (<0s) Junction-to-Ambient International Rectifier Submit Datasheet Feedback March 6, 205
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFH420PbF 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.V 2.9V 2.7V BOTTOM 2.5V 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.V 2.9V 2.7V BOTTOM 2.5V 0 2.5V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 0 2.5V 60µs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0 R DS(on), Drain-to-Source On Resistance.6 I D = 50A.4 V GS = 0V T J = 50 C.2 0 T J = 25 C.0 V DS = 5V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss C oss I D = 50A V DS = 20V V DS = 3V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier Submit Datasheet Feedback March 6, 205
4 V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRFH420PbF T J = 50 C T J = 25 C 0 OPERATION IN THIS AREA LIMITED BY R DS (on) Limited by package µsec 0 msec V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 Tc = 25 C 0msec Tj = 50 C Single Pulse DC V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Limited by package I D = 50µA I D = 250µA I D =.0mA I D =.0A T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 0. Drain-to Source Breakdown Voltage D = Thermal Response ( Z thjc ) C/W SINGLE PULSE Notes: ( THERMAL RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case International Rectifier Submit Datasheet Feedback March 6, 205
5 E AS, Single Pulse Avalanche Energy (mj) R DS(on), Drain-to -Source On Resistance (m ) IRFH420PbF I D = 50A I D TOP 5A 24A BOTTOM 50A T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On Resistance vs. Gate Voltage Fig 3. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 0 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25 C and Tstart =25 C (Single Pulse) 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 25 C..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 4. Typical Avalanche Current vs. Pulsewidth International Rectifier Submit Datasheet Feedback March 6, 205
6 IRFH420PbF Fig 5. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T I AS V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs VDD Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 8. Gate Charge Test Circuit Fig 9. Gate Charge Waveform International Rectifier Submit Datasheet Feedback March 6, 205
7 IRFH420PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-36: For more information on package inspection techniques, please refer to application note AN-54: PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP ) PIN IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback March 6, 205
8 IRFH420PbF PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN ORIENTATION IN TAPE Note: All dimension are nominal Package Type Reel Diameter QTY Reel Width Ao Bo Ko P W Pin Quadrant (Inch) W 5 X 6 PQFN Q Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback March 6, 205
9 IRFH420PbF Qualification Information Qualification Level Industrial (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS Compliant PQFN 5mm x 6mm MSL (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.38mH, R G = 50, I AS = 50A. Pulse width 400µs; duty cycle 2%. R is measured at T J of approximately 90 C. When mounted on inch square PCB (FR-4). Please refer to AN-994 for more details: Calculated continuous current based on maximum allowable junction temperature. Current is limited to A by source bonding technology. Revision History Date 5/7/203 Comments Updated package 3D drawing, on page. Added Continuous Drain Current limited by source bonding technology, on page. Divided note 6 into note 6 & 7, on page 8. /5/203 Release of final data sheet. 3/6/205 Updated package outline and tape and reel on pages 7 and 8. IR WORLD HEADQUARTERS: 0 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback March 6, 205
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRFH420TRPBF
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PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
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Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A
HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationV DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationV DSS. 40V R DS(on) typ. 1.4mΩ max. 1.8mΩ 250Ac. I D (Silicon Limited) I D (Package Limited) 195A. HEXFET Power MOSFET.
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z AUIRFZ44ZS D 2 Tube 50 AUIRFZ44ZS Tape and Reel Left 800 AUIRFZ44ZSTRL
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95071A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationIRF6668PbF IRF6668TRPbF
Typical R DS(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRFS4127PbF IRFSL4127PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF6602/IRF6602TR1 HEXFET Power MOSFET
l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationAUTOMOTIVE GRADE. Standard Pack Orderable Part Number AUIRL3705Z TO-220 Tube 50 AUIRL3705Z AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL AUIRL3705ZS D 2 -Pak
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationHEXFET Power MOSFET V DSS R DS(on) max (mw) I D
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free HEXFET Power MOSFET V DSS R DS(on) max (mw) I D -30V
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free
More information