IRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
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1 PD DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low Q RR for better THD and lower EMI 75 C operating junction temperature for ruggedness Can deliver up to 300W per channel into 8Ω load in half-bridge configuration amplifier Key Parameters V DS 200 V R DS(ON) V 80 m: Q g typ. 8 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 75 C D G S TO-220AB Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 75 C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 200 V V GS Gate-to-Source Voltage ±20 I T C = 25 C Continuous Drain Current, V V 8 A I T C = C Continuous Drain Current, V V 3 I DM Pulsed Drain Current c 52 P C = 25 C Power Dissipation f W P C = C Power Dissipation f Linear Derating Factor W/ C T J Operating Junction and -55 to + 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 6-32 or M3 screw 300 lbxin (.Nxm) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case f.43 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient f 62 Notes through are on page /03/06
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 200 V ΒV DSS / T J Breakdown Voltage Temp. Coefficient 0.23 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 80 mω V GS = V, I D = A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = µa V GS(th) / T J Gate Threshold Voltage Coefficient -3 mv/ C I DSS Drain-to-Source Leakage Current 20 µa V DS = 200V, V GS = 0V 250 V DS = 200V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage na V GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V g fs Forward Transconductance 24 S V DS = 50V, I D = A Q g Total Gate Charge 8 29 Q gs Pre-Vth Gate-to-Source Charge 4.5 V DS = V Q gs2 Post-Vth Gate-to-Source Charge.4 nc V GS = V Q gd Gate-to-Drain Charge 5.3 I D = A Q godr Gate Charge Overdrive 6.8 See Fig. 6 and 8 Q sw Switch Charge (Q gs2 + Q gd ) 6.7 R G(int) Internal Gate Resistance 3.2 Ω t d(on) Turn-On Delay Time 7.8 V DD = V, V GS = Ve t r Rise Time 2 I D = A t d(off) Turn-Off Delay Time 6 ns R G = 2.4Ω t f Fall Time 6.3 C iss Input Capacitance 200 V GS = 0V C oss Output Capacitance 9 pf V DS = 50V C rss Reverse Transfer Capacitance 20 ƒ =.0MHz, See Fig.5 C oss eff. Effective Output Capacitance V GS = 0V, V DS = 0V to 60V L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (0.25in.) L S Internal Source Inductance 7.5 from package G Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energyd 94 mj I AR Avalanche Currentg See Fig. 4, 5, 6a, 6b A E AR Repetitive Avalanche Energy g mj Diode Characteristics Parameter Min. Typ. Max. Units I T C = 25 C Continuous Source Current 8 (Body Diode) A I SM Pulsed Source Current 52 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Conditions V GS = 0V, I D = 250µA and center of die contact Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = A, V GS = 0V e T J = 25 C, I F = A di/dt = A/µs e S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.62mH, R G = 25Ω, I AS = A. ƒ Pulse width 400µs; duty cycle 2%. R θ is measured at T J of approximately 90 C. Limited by Tjmax. See Figs. 4, 5, 7a, 7b for repetitive avalanche information. 2
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 5V 2V V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS TOP 5V 2V V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 5.0V V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 60µs PULSE WIDTH Tj = 75 C V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics V DS = 25V 60µs PULSE WIDTH I D = A V GS = V T J = 75 C T J = 25 C V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = A V DS = 60V V DS = V V DS = 40V 6.0 C oss 4.0 C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs.drain-to-source Voltage Fig 6. Typical Gate Charge vs.gate-to-source Voltage 3
4 I D, Drain Current (A) V GS(th), Gate Threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) T J = 75 C 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 25 C µsec 0. V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Tc = 25 C Tj = 75 C Single Pulse DC msec msec 0 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area I D = µa T J, Junction Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Junction Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 τ 4 τ 4 τ C τ
5 E AR, Avalanche Energy (mj) R DS(on), Drain-to -Source On Resistance (m Ω) Avalanche Current (A) E AS, Single Pulse Avalanche Energy (mj) I D = A I D TOP.6A 2.4A BOTTOM A 200 T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage Starting T J, Junction Temperature ( C) Fig 3. Maximum Avalanche Energy vs. Drain Current 0 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature Fig 4. Typical Avalanche Current Vs.Pulsewidth TOP Single Pulse BOTTOM.0% Duty Cycle I D = A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 7a, 7b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure ) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 5V tp V (BR)DSS V DS L DRIVER R G 20V V GS tp D.U.T IAS 0.0Ω + - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms L D V DS V DD + - V DS 90% D.U.T % V GS Pulse Width < µs Duty Factor < 0.% V GS t d(on) t r t d(off) t f Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs 0 K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 8a. Gate Charge Test Circuit Fig 8b Gate Charge Waveform 6
7 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$,5) /27& 2'( $66(0%/('2::,7+($66(0%/</,(& Note: "P" in assembly line position indicates "Lead-Free",7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$5780%(5 '$7(&2'( <($5 :((. /,(& TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 03/06 7
8 Note: For the most current drawings please refer to the IR website at:
IRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
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More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationStrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationIRF9910PbF HEXFET Power MOSFET R DS(on) max
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More informationStrongIRFET IRFB7546PbF
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationV DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationStrongIRFET IRFB7740PbF
I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationStrongIRFET IRL60B216
I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationW/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 57
PD 974 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationIRF6646 DirectFET Power MOSFET
Typical R DS(on) (Ω) V GS, Gate-to-Source Voltage (V) l RoHS compliant containing no lead or bromide l Low Profile (
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More information120 P C = 25 C Power Dissipation 360 P C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97B IRFP4332PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.5
PD 9747B IRFB377PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 32
PD 9747 IRFS457PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 57
PD 9736A IRFB427PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRL8113 IRL8113S IRL8113L
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.0
PD 97323 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9728 IRFP336PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
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