SMPS MOSFET. V DSS R DS(on) max I D
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1 SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability PD A IRFR3412PbF IRFU3412PbF HEXFET Power MOSFET V DSS R DS(on) max I D V 0.025Ω 48A D-Pak IRFR3412 I-Pak IRFU3412 Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 48 I T C = C Continuous Drain Current, V V 34 A I DM Pulsed Drain Current 190 P C = 25 C Power Dissipation 140 W Linear Derating Factor 0.95 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt ƒ 6.4 V/ns T J Operating Junction and -55 to 175 C T STG Storage Temperature Range Soldering Temperature, for second 300(1.6mm from case ) Mounting torqe, 6-32 or M3 screw lbf in (1.1N m) Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 48 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 190 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 29A, V GS = 0V t rr Reverse Recovery Time 68 ns T J = 125 C, I F = 29A Q rr Reverse RecoveryCharge nc di/dt = A/µs I RRM Reverse RecoveryCurrent A t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) /03/04
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0. V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance Ω V GS = V, I D = 29A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 1.0 V µa DS = 95V, V GS = 0V 250 V DS = 80V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage V GS = 20V na Gate-to-Source Reverse Leakage - V GS = -20V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 25 S V DS = 50V, I D = 29A Q g Total Gate Charge I D = 29A Q gs Gate-to-Source Charge nc V DS = 50V Q gd Gate-to-Drain ("Miller") Charge V GS = V, t d(on) Turn-On Delay Time 19 V DD = 50V t r Rise Time 68 ns I D = 29A t d(off) Turn-Off Delay Time 44 R G = 6.8Ω t f Fall Time 37 V GS = V C iss Input Capacitance 3430 V GS = 0V C oss Output Capacitance 270 V DS = 25V C rss Reverse Transfer Capacitance 150 pf ƒ = 1.0MHz C oss Output Capacitance 40 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 170 V GS = 0V, V DS = 80V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 270 V GS = 0V, V DS = 0V to 80V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 160 mj I AR Avalanche Current 29 A E AR Repetitive Avalanche Energy 14 mj Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.05 R θja Junction-to-Ambient (PCB mount)* 50 C/W R θja Junction-to-Ambient 1 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting T J = 25 C, L = 0.38mH, R G = 25Ω, I AS = 29A, (See Figure 12a) ƒ I SD 29A, di/dt 420A/µs, V DD V (BR)DSS, T J 150 C Pulse width 300µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN
3 I D, Drain-to-Source Current (A) TOP BOTTOM VGS 15V V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) I D, Drain-to-Source Current (A) 0 TOP BOTTOM VGS 15V V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T J = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 48A 2.5 I D, Drain-to-Source Current (A) 1 T = 175 J C T = 25 J C V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRFR/U3412PbF V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 29A V DS = 80V VDS= 50V VDS= 20V Ciss 8 0 Coss 4 Crss 1 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on).0 T J = 175 C.0 µsec 1.0 T J = 25 C V GS = 0V V SD, Source-toDrain Voltage (V) Tc = 25 C Tj = 175 C Single Pulse 1msec msec 1 0 V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 50 LIMITED BY PACKAGE V DS R D 40 R G V GS D.U.T. - V DD I D, Drain Current (A) V GS Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit V DS 90% T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C t 1, Rectangular Pulse Duration (sec) P DM t 1 t 2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 R G V DS 20V V GS tp L D.U.T IAS 0.01Ω Fig 12a. Unclamped Inductive Test Circuit tp 15V DRIVER - V DD A V (BR)DSS E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D 12A 21A 29A Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF V GS Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs 7
8 D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMB LY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S E MBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = ASSEMBLY SITE CODE 8
9 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S E MBLY LOT CODE IRFU A PART NUMBER DATE CODE YEAR 9 = 1999 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S E MBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 19 A = ASSEMBLY SITE CODE 9
10 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.12/04
11 Note: For the most current drawings please refer to the IR website at:
SMPS MOSFET. V DSS R DS(on) max I D
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationIRFS4127PbF IRFSL4127PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More information