TO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)

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1 Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating.these features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings HEXFET Power MOSFET V DSS = 40V R DS(on) = 3.7mΩ I D = 75A 1 G TO-220AB IRF1404Z D S D 2 Pak IRF1404ZS IRF1404Z IRF1404ZS IRF1404ZL TO-262 IRF1404ZL Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited) 190 I T C = C Continuous Drain Current, V 10V 130 A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 75 I DM Pulsed Drain Current c 750 P C = 25 C Power Dissipation 220 W Linear Derating Factor 1.5 W/ C V GS Gate-to-Source Voltage ± 20 V E AS (Thermally limited) Single Pulse Avalanche Energyd 320 mj E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 480 I AR Avalanche Currentc See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Mounting Torque, 6-32 or M3 screw i Thermal Resistance PD B Parameter Typ. Max. Units R θjc Junction-to-Case 0.65 C/W R θcs Case-to-Sink, Flat Greased Surface i 0.50 R θja Junction-to-Ambient i 62 R θja Junction-to-Ambient (PCB Mount) j 40 10/12/11

2 IRF1404ZS_L Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 40 V ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250μA gfs Forward Transconductance 170 V V DS = 25V, I D = 75A I DSS Drain-to-Source Leakage Current 20 μa V DS = 40V, V GS = 0V 250 V DS = 40V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 na V GS = 20V Gate-to-Source Reverse Leakage -200 V GS = -20V Q g Total Gate Charge 150 I D = 75A Q gs Gate-to-Source Charge 31 nc V DS = 32V Q gd Gate-to-Drain ("Miller") Charge 42 V GS = 10V e t d(on) Turn-On Delay Time 18 V DD = 20V t r Rise Time 110 I D = 75A t d(off) Turn-Off Delay Time 36 ns R G = 3.0 Ω t f Fall Time 58 V GS = 10V e L D Internal Drain Inductance 4.5 Between lead, nh 6mm (0.25in.) L S Internal Source Inductance 7.5 from package and center of die contact C iss Input Capacitance 4340 V GS = 0V C oss Output Capacitance 1030 V DS = 25V C rss Reverse Transfer Capacitance 550 pf ƒ = 1.0MHz C oss Output Capacitance 3300 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 920 V GS = 0V, V DS = 32V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 1350 V GS = 0V, V DS = 0V to 32V f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 75 MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current 750 integral reverse (Body Diode)Ãc V SD Diode Forward Voltage 1.3 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Conditions V GS = 0V, I D = 250μA Reference to 25 C, I D = 1mA V GS = 10V, I D = 75A e p-n junction diode. T J = 25 C, I S = 75A, V GS = 0V e T J = 25 C, I F = 75A, V DD = 20V di/dt = A/μs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) 2

3 I D, Drain-to-Source Current ( A) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) Gfs, Forward Transconductance (S) IRF1404ZS_L 0 V GS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 0 V GS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V V 20μs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 4.5V 20μs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25 C T J = 175 C 160 T J = 175 C 120 T J = 25 C V DS = 15V 20μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) 40 0 V DS = 15V 20μs PULSE WIDTH I D, Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 3

4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRF1404ZS_L V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 75A V DS = 32V VDS= 20V Ciss Coss 4 Crss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on).0 T J = 175 C T J = 25 C μsec 1.0 V GS = 0V V SD, Source-toDrain Voltage (V) 10 1 Tc = 25 C Tj = 175 C Single Pulse 1msec 10msec V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) IRF1404ZS_L LIMITED BY PACKAGE 2.0 I D = 75A V GS = 10V T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 D = Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) 1E-006 1E t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) IRF1404ZS_L V DS L 15V DRIVER TOP BOTTOM I D 31A 53A 75A 400 R G 20V V GS tp D.U.T IAS 0.01Ω - V DD A 300 Fig 12a. Unclamped Inductive Test Circuit 200 tp V (BR)DSS Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Q G Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V Q GS Q GD 4.0 V G Current Regulator Same Type as D.U.T. Charge Fig 13a. Basic Gate Charge Waveform I D = 250μA 50KΩ 12V.2μF.3μF V GS D.U.T. V - DS mA T J, Temperature ( C ) I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6

7 Avalanche Current (A) E AR, Avalanche Energy (mj) IRF1404ZS_L 00 0 Duty Cycle = Single Pulse 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Δ Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax E E E E E E E E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth TOP Single Pulse BOTTOM 10% Duty Cycle I D = 75A Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc Fig 16. Maximum Avalanche Energy I av = 2DT/ [1.3 BV Z th ] Vs. Temperature E AS (AR) = P D (ave) t av 7

8 IRF1404ZS_L - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =10V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. - V DD 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit V DS 90% 10% V GS t d(on) t r t d(off) t f Fig 18b. Switching Time Waveforms 8

9 IRF1404ZS_L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) (.415) (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.255) 6.10 (.240) (.045) MIN LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN (.555) (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 1.15 (.045) 2.54 (.) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO PART NUMBER LOT CODE DATE CODE Notes: 1. For an Automotive Qualified version of this part please see 2. For the most current drawing please refer to IR website at 9

10 IRF1404ZS_L D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L For GB Production THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO F530S PART NUMBER LOT CODE DATE CODE Notes: 1. For an Automotive Qualified version of this part please see 2. For the most current drawing please refer to IR website at

11 IRF1404ZS_L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLEC- TOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 INTERNATIONAL ASSEMBLED ON WW 19, 1997 RECTIFIER IN THE ASSEMBLY LINE "C" LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: 1. For an Automotive Qualified version of this part please see 2. For the most current drawing please refer to IR website at

12 IRF1404ZS_L D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) (.429) (.421) (.457) (.449) (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by T Jmax, starting T J = 25 C, L = 0.11mH R G = 25Ω, I AS = 75A, V GS =10V. Part not recommended for use above this value. ƒ Pulse width 1.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. % tested to this value in production. This is only applied to TO-220AB pakcage. ˆ This is applied to D 2 Pak, when mounted on 1" square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information. 10/