D-Pak TO-252AA. I-Pak TO-251AA. 1
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- Gertrude Terry
- 6 years ago
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1 l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to.5 watts are possible in typical surface mount applications. IRFR54PbF IRFU54PbF HEXFET Power MOSFET D S DPak TO252AA V DSS = 0V R DS(on) = 0.205Ω I D = 3A IPak TO25AA PD 9534A Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 3 I T C = 0 C Continuous Drain Current, V V 8.2 A I DM Pulsed Drain Current 52 P C = 25 C Power Dissipation 66 W Linear Derating Factor 0.53 W/ C V GS GatetoSource Voltage ± 20 V E AS Single Pulse Avalanche Energy 94 mj I AR Avalanche Current 8.4 A E AR Repetitive Avalanche Energy 6.3 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase.9 R θja JunctiontoAmbient (PCB mount)** 50 C/W R θja JunctiontoAmbient 2/3/04
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 0 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I D =.0mA R DS(on) Static DraintoSource OnResistance Ω V GS = V, I D = 7.8A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA g fs Forward Transconductance 3.2 S V DS = 50V, I D = 7.8A I DSS DraintoSource Leakage Current 25 V µa DS = 0V, V GS = 0V 250 V DS = 80V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 0 V GS = 20V na GatetoSource Reverse Leakage 0 V GS = 20V Q g Total Gate Charge 58 I D = 8.4A Q gs GatetoSource Charge 8.3 nc V DS = 80V Q gd GatetoDrain ("Miller") Charge 32 V GS = V, See Fig. 6 and 3 t d(on) TurnOn Delay Time 5 V DD = 50V t r Rise Time 58 I D = 8.4A ns t d(off) TurnOff Delay Time 45 R G = 9.Ω t f Fall Time 46 R D =6.2Ω, See Fig. D Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact S C iss Input Capacitance 760 V GS = 0V C oss Output Capacitance 260 pf V DS = 25V C rss Reverse Transfer Capacitance 70 ƒ =.0MHz, See Fig. 5 SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 3 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G 52 (Body Diode) pn junction diode. S V SD Diode Forward Voltage.6 V T J = 25 C, I S = 7.8A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 8.4A Q rr Reverse Recovery Charge nc di/dt = 0A/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 6.4mH R G = 25Ω, I AS = 7.8A. (See Figure 2) ƒ I SD 7.8A, di/dt 200A/µs, V DD V (BR)DSS, T J 50 C Pulse width 300µs; duty cycle 2%. This is applied for IPAK, L S of DPAK is measured between lead and center of die contact Uses IRF9530N data and test conditions. ** When mounted on " square PCB (FR4 or G Material ). For recommended footprint and soldering techniques refer to application note #AN
3 I D, DraintoSource Current (A) 0 0. VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH 0.0 T J = 25 C 0. 0 V DS, DraintoSource Voltage (V) I D, DraintoSource Current (A) 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM4.5V 4.5V 20µs PULSE WIDTH 0. T J = 50 C 0. 0 V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, DraintoSource Current (A) 0 T J = 25 C T J= 50 C V DS= V 20µs PULSE WIDTH V GS, GatetoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 2.5 I D = 4A V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature 3
4 C, Capacitance (pf) 2000 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = Cgd 600 C oss = C ds Cgd 200 C iss 800 C oss Crss A 0 V DS, DraintoSource Voltage (V) V GS, GatetoSource Voltage (V) I = D 8.4A V DS =80V V DS =50V V DS =20V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. DraintoSource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,SourcetoDrain Voltage (V) I I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms TC = 25 C TJ = 50 C Single Pulse ms 0 00 V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 5 V DS R D I D, Drain Current (A) T C, Case Temperature ( C) R G V GS V Pulse Width µs Duty Factor 0. % D.U.T. Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % V DD 90% Fig 9. Maximum Drain Current Vs. Case Temperature V DS Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 5
6 Fig 2a. Unclamped Inductive Test Circuit I AS V DS L R G D.U.T IAS 20V DRIVER tp 0.0Ω V V DD DD A 5V E AS, Single Pulse Avalanche Energy (mj) I D TOP 3.5A 4.9A BOTTOM 7.8A Starting T, Junction Temperature ( J C) tp Fig 2c. Maximum Avalanche Energy Vs. Drain Current V (BR)DSS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. V Q G 2V.2µF 50KΩ.3µF Q GS Q GD D.U.T. V DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer V GS R G dv/dt controlled by R G I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD * Reverse Polarity of D.U.T for PChannel Driver Gate Drive Period P.W. D = P.W. Period [ V GS =V ] *** D.U.T. I SD Waveform Reverse Recovery Current ReApplied Voltage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Ripple 5% Forward Drop [ V DD ] [ ] I SD *** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 4. For PChannel HEXFETS 7
8 DPak (TO252AA) Package Outline Dimensions are shown in millimeters (inches) DPak (TO252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR20 WITH ASSEMBLY LOT CODE 234 ASSEMBLED ON WW 6, 999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "LeadFree" INTERNATIONAL RECTIFIER LOGO AS S E MBLY LOT CODE IRFU20 96A 2 34 PART NUMBER DATE CODE YEAR 9 = 999 WEEK 6 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEADFREE PRODUCT (OPTIONAL) YEAR 9 = 999 WEEK 6 A = ASSEMBLY SITE CODE 8
9 IPak (TO25AA) Package Outline Dimensions are shown in millimeters (inches) IRFR/U54PbF IPak (TO25AA) Part Marking Information EXAMPLE: THIS IS AN IRFU20 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 9, 999 IN THE ASSEMBLY LINE "A" Note: "P" in as sembly line position indicates "LeadFree" INTERNATIONAL RECT IFIER LOGO ASS EMB LY LOT CODE IRFU20 99A PART NUMBER DATE CODE YEAR 9 = 999 WEEK 9 LINE A OR INTERNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEADFREE PRODUCT (OPTIONAL) YEAR 9 = 999 WEEK 9 A = ASSEMBLY SITE CODE 9
10 DPak (TO252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA48 & EIA54. 3 INCH 6 mm NOTES :. OUTLINE CONFORMS TO EIA48. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.2/04
11 Note: For the most current drawings please refer to the IR website at:
D-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
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l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
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Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
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Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationV DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
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PD - 9729A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
Utra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Lead-Free Description G IRFR3303PbF IRFU3303PbF HEXFET Power MOSFET
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