IRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
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1 DIGITAL AUDIO MOSFET PD A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier applications Ÿ Low R DS(ON) for improved efficiency Ÿ Low Qg and Qsw for better THD and improved efficiency Ÿ Low Qrr for better THD and lower EMI Ÿ Can delivery up to 50W per channel into 4Ω load in half-bridge configuration amplifier Ÿ Lead-free package Key Parameters g V DS V R DS(ON) V 58 m: Q g typ. 2 nc Q sw typ. 6.9 nc R G(int) typ. 3.4 Ω T J max 50 C TO-220 Full-Pak 5 PIN G, G2 D, D2 S, S2 Description Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings g Parameter Max. Units V DS Drain-to-Source Voltage V V GS Gate-to-Source Voltage ±20 I T C = 25 C Continuous Drain Current, V V A I T C = C Continuous Drain Current, V V 6.8 I DM Pulsed Drain Current c 44 P C = 25 C Power Dissipation f 8 W P C = C Power Dissipation f Linear Derating Factor W/ C E AS Single Pulse Avalanche Energyd 4 mj T J Operating Junction and -55 to + 50 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 6-32 or M3 screw 300 lbxin (.Nxm) Thermal Resistance g Parameter Typ. Max. Units R θjc Junction-to-Case f 7. C/W R θja Junction-to-Ambient (free air) /2/06
2 IRFI422H-7P Electrical T J = 25 C (unless otherwise specified) g Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage V Conditions V GS = 0V, I D = 250µA ΒV DSS / T J Breakdown Voltage Temp. Coefficient 0.09 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance mω V GS = V, I D = 6.6A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA V GS(th) / T J Gate Threshold Voltage Coefficient - mv/ C I DSS Drain-to-Source Leakage Current 20 µa V DS = V, V GS = 0V 250 V DS = V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 na V GS = 20V Gate-to-Source Reverse Leakage -200 V GS = -20V g fs Forward Transconductance S V DS = 50V, I D = 6.6A Q g Total Gate Charge 2 8 Q gs Pre-Vth Gate-to-Source Charge.6 V DS = 80V Q gs2 Post-Vth Gate-to-Source Charge 0.7 nc V GS = V Q gd Gate-to-Drain Charge 6.2 I D = 6.6A Q godr Gate Charge Overdrive 3.5 See Fig. 6 and 5 Q sw Switch Charge (Q gs2 + Q gd ) 6.9 R G(int) Internal Gate Resistance 3.4 Ω t d(on) Turn-On Delay Time 4.7 V DD = 50V, V GS = Ve t r Rise Time 8.3 I D = 6.6A t d(off) Turn-Off Delay Time 9.5 ns R G = 2.5Ω t f Fall Time 4.3 C iss Input Capacitance 490 V GS = 0V C oss Output Capacitance 64 pf V DS = 50V C rss Reverse Transfer Capacitance 34 ƒ =.0MHz, See Fig.5 C oss eff. Effective Output Capacitance V GS = 0V, V DS = 0V to 80V L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package and center of die contact S Diode Characteristics g Parameter Min. Typ. Max. Units I T C = 25 C Continuous Source Current (Body Diode) A I SM Pulsed Source Current 44 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 6.6A, V GS = 0V e T J = 25 C, I F = 6.6A di/dt = A/µs e Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.9mH, R G = 25Ω, I AS = 6.6A. ƒ Pulse width 400µs; duty cycle 2%. R θ is measured at T J of approximately 90 C. Specifications refer to single MosFET. 2
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) IRFI422H-7P VGS TOP 5V 2V V 9.0V 8.0V 7.0V BOTTOM 6.0V VGS TOP 5V 2V V 9.0V 8.0V 7.0V BOTTOM 6.0V 6.0V 6.0V 60µs PULSE WIDTH Tj = 25 C 0. Fig. Typical Output Characteristics 60µs PULSE WIDTH Tj = 50 C 0. Fig 2. Typical Output Characteristics 2.5 I D = 6.6A V GS = V T J = 50 C T J = 25 C V DS = 50V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 6.6A V DS = 80V V DS = 50V V DS = 20V C iss 6.0 C oss C rss Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs.drain-to-source Voltage Fig 6. Typical Gate Charge vs.gate-to-source Voltage 3
4 I D, Drain Current (A) V GS(th), Gate Threshold Voltage (V) I SD, Reverse Drain Current (A) IRFI422H-7P 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 50 C µsec T J = 25 C 0. msec V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2 msec 0.0 Tc = 25 C Tj = 50 C Single Pulse DC Fig 8. Maximum Safe Operating Area I D = 250µA T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Junction Temperature T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature D = Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 τ 4 τ 4 τ C τ
5 E AS, Single Pulse Avalanche Energy (mj) R DS(on), Drain-to -Source On Resistance (m Ω) IRFI422H-7P I D = 6.6A I D TOP.2A 2.A BOTTOM 6.6A 25 T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage Starting T J, Junction Temperature ( C) Fig 3a. Maximum Avalanche Energy vs. Drain Current 5V tp V (BR)DSS V DS L DRIVER R G 20V V GS tp D.U.T I AS 0.0Ω + - V DD A I AS Fig 3b. Unclamped Inductive Test Circuit Fig 3c. Unclamped Inductive Waveforms L D V DS V DD + - V DS 90% D.U.T % V GS Pulse Width < µs Duty Factor < 0.% V GS t d(on) t r t d(off) t f Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms Vds Id Vgs 0 K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 5a. Gate Charge Test Circuit Fig 5b Gate Charge Waveform 5
6 IRFI422H-7P TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 7 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information Ã4 TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.08/06 6
7 Note: For the most current drawings please refer to the IR website at:
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationIRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95661 IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
More informationW/ C V GS Gate-to-Source Voltage ±20 dv/dt Peak Diode Recovery f 4.6. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b, E AR
PD 97363 IRLB334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.8 C/W)
PD -97538A IRFH5025PbF HEXFET Power MOSFET V DS 250 V R DS(on) max (@V GS = V) 0 mω Q g (typical) 37 nc R G (typical).6 Ω I D (@T c(bottom) = 25 C) 25 A PQFN 5X6 mm Applications Secondary Side Synchronous
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationW/ C V GS Gate-to-Source Voltage ±16 dv/dt Peak Diode Recovery f 8.0. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b E AR
PD 97357 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 32
PD 9747 IRFS457PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRF6668PbF IRF6668TRPbF
Typical R DS(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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