120 P C = 25 C Power Dissipation 360 P C = 100 C Power Dissipation Linear Derating Factor

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1 PDP SWITCH PD - 97B IRFP4332PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch pplications l Low Q G for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l75 C Operating Junction Temperature for Improved Ruggedness l Repetitive valanche Capability for Robustness and Reliability Key Parameters V DS min 25 V V DS (valanche) typ. 3 V R DS(ON) V 29 m: T J max 75 C G D S D TO-247C S D G G D S Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E PULSE rating. dditional features of this MOSFET are 75 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. bsolute Maximum Ratings Parameter Max. Units V GS Gate-to-Source Voltage ±3 V I T C = 25 C Continuous Drain Current, V V 57 I T C = C Continuous Drain Current, V V 4 I DM Pulsed Drain Current c 23 I T C = C Repetitive Peak Current gh 2 P C = 25 C Power Dissipation 36 W P C = C Power Dissipation Linear Derating Factor W/ C T J Operating Junction and -4 to 75 C T STG Storage Temperature Range Soldering Temperature for seconds Mounting Torque, 6-32 or M3 Screw 3 lbxin (.Nxm) N Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case f.42 R θcs Case-to-Sink, Flat, Greased Surface.24 C/W R θj Junction-to-mbient f 4 Notes through are on page 9 2/5/9

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = V, I D = 25µ ΒV DSS / T J Breakdown Voltage Temp. Coefficient 7 mv/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance mω V GS = V, I D = 35 e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µ V GS(th) / T J Gate Threshold Voltage Coefficient -4 mv/ C I DSS Drain-to-Source Leakage Current 2 µ V DS = 25V, V GS = V 2 µ V DS = 25V, V GS = V, T J = 25 C I GSS Gate-to-Source Forward Leakage n V GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V g fs Forward Transconductance S V DS = 25V, I D = 35 Q g Total Gate Charge 99 5 nc V DD = 25V, I D = 35, V GS = Ve Q gd Gate-to-Drain Charge 35 t st Shoot Through Blocking Time ns V DD = 2V, V GS = 5V, R G = 4.7Ω L = 22nH, C=.3µF, V GS = 5V 52 E PULSE Energy per Pulse µj V DS = 2V, R G = 5.Ω, T J = 25 C 92 L = 22nH, C=.3µF, V GS = 5V V DS = 2V, R G = 5.Ω, T J = C C iss Input Capacitance 586 V GS = V C oss Output Capacitance 53 pf V DS = 25V C rss Reverse Transfer Capacitance 3 ƒ =.MHz, C oss eff. Effective Output Capacitance 36 V GS = V, V DS = V to 2V L D Internal Drain Inductance 5. Between lead, nh 6mm (.25in.) L S Internal Source Inductance 3 from package valanche Characteristics Parameter E S Single Pulse valanche Energyd 2 mj E R Repetitive valanche Energy c 36 mj V DS(valanche) Repetitive valanche Voltagec 3 V I S valanche Currentd 35 Diode Characteristics Parameter Min. Typ. Max. Units I T C = 25 C Continuous Source Current 57 (Body Diode) I SM Pulsed Source Current 23 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 9 29 ns Q rr Reverse Recovery Charge nc Typ. and center of die contact Max. MOSFET symbol Conditions showing the integral reverse p-n junction diode. G Units T J = 25 C, I S = 35, V GS = V e T J = 25 C, I F = 35, V DD = 5V di/dt = /µs e D S 2

3 Energy per pulse (µj) Energy per pulse (µj) I D, Drain-to-Source Current (Α) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current () I D, Drain-to-Source Current () IRFP4332PbF VGS TOP 5V V 8.V 7.V 6.5V 6.V BOTTOM 5.5V VGS TOP 5V V 8.V 7.V 6.5V 6.V BOTTOM 5.5V 5.5V 5.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics T J = 75 C I D = 35 V GS = V 2. T J = 25 C.5. V DS = 25V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 8 L = 22nH C =.3µF C 25 C 8 L = 22nH C = Variable C 25 C V DS, Drain-to -Source Voltage (V) I D, Peak Drain Current () Fig 5. Typical E PULSE vs. Drain-to-Source Voltage Fig 6. Typical E PULSE vs. Drain Current 3

4 I D, Drain Current () C, Capacitance (pf) Energy per pulse (µj) I SD, Reverse Drain Current () I D, Drain-to-Source Current () V GS, Gate-to-Source Voltage (V) IRFP4332PbF 4 L = 22nH 2 8 C=.3µF C=.2µF C=.µF T J = 75 C Temperature ( C) Fig 7. Typical E PULSE vs.temperature T J = 25 C V GS = V V SD, Source-to-Drain Voltage (V) Fig 8. Typical Source-Drain Diode Forward Voltage 8 V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 2 6 I D = 35 V DS = 2V V DS = 25V V DS = 5V 6 Ciss Coss 2 4 Crss V DS, Drain-to-Source Voltage (V) Fig 9. Typical Capacitance vs.drain-to-source Voltage Q G Total Gate Charge (nc) Fig. Typical Gate Charge vs.gate-to-source Voltage 6 5 OPERTION IN THIS RE LIMITED BY R DS (on) µsec 4 µsec µsec T J, Junction Temperature ( C). Tc = 25 C Tj = 75 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig. Maximum Drain Current vs. Case Temperature Fig 2. Maximum Safe Operating rea 4

5 V GS(th) Gate threshold Voltage (V) Repetitive Peak Current () R DS (on), Drain-to -Source On Resistance (Ω) E S, Single Pulse valanche Energy (mj) IRFP4332PbF.4.3 I D = 35 8 I D TOP BOTTOM T J = 25 C 2 T J = 25 C V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Maximum valanche Energy Vs. Temperature I D = 25µ ton= µs Duty cycle =.25 Half Sine Wave Square Pulse T J, Temperature ( C ) Case Temperature ( C) Fig 5. Threshold Voltage vs. Temperature Fig 6. Typical Repetitive peak Current vs. Case temperature Thermal Response ( Z thjc ) D = R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri τ C τ Ri ( C/W) τι (sec) SINGLE PULSE ( THERML RESPONSE ) E-6 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 - R G D.U.T * ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD ** - Reverse Recovery Current Re-pplied Voltage Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Forward Drop D = P.W. Period *** V GS =V V DD Ripple 5% I SD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** V GS = 5V for Logic Level Devices Fig 8. Diode Reverse Recovery Test Circuit for HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IS.Ω - V DD I S Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms 2V Current Regulator Same Type as D.U.T..2µF 5KΩ.3µF Vds Vgs Id D.U.T. V - DS V GS Vgs(th) 3m I G I D Current Sampling Resistors Fig 2a. Gate Charge Test Circuit Qgs Qgs2 Qgd Qgodr Fig 2b. Gate Charge Waveform 6

7 RG DRIVER C PULSE L VCC PULSE B B RG Ipulse DUT t ST Fig 2a. t st and E PULSE Test Circuit Fig 2b. t st Test Waveforms Fig 2c. E PULSE Test Waveforms 7

8 TO-247C Package Outline Dimensions are shown in millimeters (inches) TO-247C package is not recommended for Surface Mount pplication. Note: For the most current drawing please refer to IR website at: 8

9 TO-247C Part Marking Information GPBP,5)3( I r)qv h r iy yv rƒ v v v qvph r Grhq rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F"$ GDI@C TO-247C Lead Option- 23 ll dimensions in millimeters (inches) Lead ssignments - Gate 2- Drain 3- Source Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.35mH, R G = 25Ω, I S = 35. ƒ Pulse width 4µs; duty cycle 2%. R θ is measured at T J of approximately 9 C. Half sine wave with duty cycle =.25, ton=µsec. pplicable to Sustain and Energy Recovery applications. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. 2/29 9