mj I AR Avalanche Currentg 7.6
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1 Typical R DS (on) (mω), Gate-to-Source Voltage (V) l RoHS Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques PD IRF6643TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) V DSS R DS(on) 50V max ±20V max 29mΩ@ V Q g tot Q gd V gs(th) 39nC nc 4.0V pplicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN Description The IRF6643PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6643PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC- DC converters. bsolute Maximum Ratings I D = 7.6 T J = 25 C T J = 25 C , Gate-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L = 0.43mH, R G = 25Ω, I S = MZ I D = 7.6 V DS = 20V V DS = 75V V DS = 30V DirectFET ISOMETRIC Parameter Max. Units V DS Drain-to-Source Voltage 50 V Gate-to-Source Voltage ±20 I T = 25 C Continuous Drain V e 6.2 I T = 70 C Continuous Drain V e 5.0 I T C = 25 C Continuous Drain V f 35 I DM Pulsed Drain Current g 76 E S Single Pulse valanche Energy h 50 mj I R valanche Currentg 7.6 /28/06
2 IRF6643TRPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 50 V = 0V, I D = 250µ ΒV DSS / T J Breakdown Voltage Temp. Coefficient 0.8 V/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance mω = V, I D = 7.6 i (th) Gate Threshold Voltage V V DS =, I D = 50µ (th) / T J Gate Threshold Voltage Coefficient - mv/ C I DSS Drain-to-Source Leakage Current 20 µ V DS = 50V, = 0V 250 V DS = 20V, = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage n = 20V Gate-to-Source Reverse Leakage - = -20V gfs Forward Transconductance 6 S V DS = V, I D = 7.6 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 9.6 V DS = 75V Q gs2 Post-Vth Gate-to-Source Charge 2.2 nc = V Q gd Gate-to-Drain Charge 7 I D = 7.6 Q godr Gate Charge Overdrive 6 See Fig. 5 Q sw Switch Charge (Q gs2 Q gd ) 3 Q oss Output Charge 4 nc V DS = 6V, = 0V R G Gate Resistance 0.8 Ω t d(on) Turn-On Delay Time 9.2 V DD = 75V, = Vi t r Rise Time 5.0 I D = 7.6 t d(off) Turn-Off Delay Time 3 ns Clamped Inductive Load t f Fall Time 4.4 C iss Input Capacitance 2340 = 0V C oss Output Capacitance 300 pf V DS = 25V C rss Reverse Transfer Capacitance 6 ƒ =.0MHz C oss Output Capacitance 950 = 0V, V DS =.0V, f=.0mhz C oss Output Capacitance 40 = 0V, V DS = 80V, f=.0mhz Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 58 (Body Diode) T J = 25 C I SM Pulsed Source Current 76 (Body Diode)g V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 67 ns Q rr Reverse Recovery Charge nc MOSFET symbol showing the integral reverse p-n junction diode. D G S T J = 25 C, I S = 7.6, = 0V i T J = 25 C, I F = 7.6, V DD = 50V di/dt = /µs c Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. 2
3 bsolute Maximum Ratings IRF6643TRPbF Parameter Max. Units P = 25 C Power Dissipation e 2.8 W P = 70 C Power Dissipation e.8 P C = 25 C Power Dissipation f 89 T P Peak Soldering Temperature 270 C T J Operating Junction and -40 to 50 T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient el 45 R θj Junction-to-mbient jl 2.5 R θj Junction-to-mbient kl 20 C/W R θjc Junction-to-Case fl.4 R θj-pcb Junction-to-PCB Mounted.0 D = 0.50 Thermal Response ( Z thj ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri SINGLE PULSE Notes: ( THERML RESPONSE ). Duty Factor D = t/t2 2. Peak Tj = Pdm x Zthja Ta 0.0 E-006 E t, Rectangular Pulse Duration (sec) R 4 Ri ( C/W) τi (sec) R Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient τ 4 τ 4 τ C τ Notes: ƒ Surface mounted on in. square Cu board, steady state. T C measured with thermocouple incontact with top (Drain) of part. ˆ Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R θ is measured at T J of approximately 90 C. ƒ Surface mounted on in. square Cu board (still air). Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 3
4 C, Capacitance(pF) I D, Drain-to-Source Current (Α) Typical R DS(on) (Normalized) I D, Drain-to-Source Current () I D, Drain-to-Source Current () IRF6643TRPbF 7.0V VGS TOP 5V V 8.0V BOTTOM 7.0V 7.0V VGS TOP 5V V 8.0V BOTTOM 7.0V 60µs PULSE WIDTH Tj = 25 C 0. V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 60µs PULSE WIDTH Tj = 50 C 0. V DS, Drain-to-Source Voltage (V) Fig 5. Typical Output Characteristics T J = 50 C T J = 25 C T J = -40 C I D = 7.6 = V.5 V DS = V 60µs PULSE WIDTH , Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature 000 = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED 00 C rss = C gd C oss = C ds C gd C iss 0 C oss Typical R DS(on) (mω) 45 T J = 25 C 40 = 7.0V = 8.0V = V = 5V 35 C rss 30 V DS, Drain-to-Source Voltage (V) I D, Drain Current () Fig 8. Typical Capacitance vs.drain-to-source Voltage Fig 9. Typical On-Resistance vs. Drain Current 4
5 E S, Single Pulse valanche Energy (mj) I D, Drain Current () (th) Gate threshold Voltage (V) I D, Drain-to-Source Current () IRF6643TRPbF I SD, Reverse Drain Current () T J = 50 C T J = 25 C T J = -40 C = 0V V SD, Source-to-Drain Voltage (V) Fig. Typical Source-Drain Diode Forward Voltage 0 T = 25 C OPERTION IN THIS RE LIMITED BY R DS (on) µsec msec Tj = 50 C msec Single Pulse V DS, Drain-toSource Voltage (V) Fig. Maximum Safe Operating rea I D = 250µ I D = 50µ T J, mbient Temperature ( C) Fig 2. Maximum Drain Current vs. mbient Temperature T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature I D TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy vs. Drain Current 5
6 IRF6643TRPbF Id Vds Vgs 0 20K K DUT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 5a. Gate Charge Test Circuit Fig 5b. Gate Charge Waveform V (BR)DSS 5V tp V DS L DRIVER VR GS G 20V tp D.U.T I S 0.0Ω - V DD I S Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms L D V DS V DD - 90% D.U.T % Second Pulse Width < µs Duty Factor < 0.% V DS t d(off) t f t d(on) t r Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms 6
7 IRF6643TRPbF - R G D.U.T * ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD ** - Reverse Recovery Current Re-pplied Voltage Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Forward Drop D = P.W. Period *** =V V DD Ripple 5% I SD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** = 5V for Logic Level Devices Fig 8. Diode Reverse Recovery Test Circuit for HEXFET Power MOSFETs DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note N-35 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. 7
8 IRF6643TRPbF DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note N-35 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. CODE B C D E F G H J K L M R P DIMENSIONS METRIC IMPERIL MIN MX MX MX DirectFET Part Marking 8
9 IRF6643TRPbF DirectFET Tape & Reel Dimension (Showing component orientation). LODED TPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE B C D E F G H MIN DIMENSIONS METRIC MX N.C.60 MIN IMPERIL MX N.C NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6643TRPBF). For 0 parts on 7" reel, order IRF6643TRPBF REEL DIMENSIONS STNDRD OPTION (QTY 4800) TR OPTION (QTY 0) METRIC IMPERIL METRIC IMPERIL CODE MIN MX MIN MX MIN MX MIN MX N.C N.C N.C 6.9 N.C B 20.2 N.C N.C 9.06 N.C 0.75 N.C C D.5 N.C N.C.5 N.C N.C E.0 N.C N.C N.C 2.3 N.C F N.C 8.4 N.C N.C 3.50 N.C 0.53 G N.C H N.C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information./06 9
10 Note: For the most current drawings please refer to the IR website at:
IRF6668PbF IRF6668TRPbF
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PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationIRF6609. HEXFET Power MOSFET V DSS R DS(on) max Qg. 20V GS = 10V 46nC GS = 4.5V
l Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (
More informationIRF6706S2TRPbF IRF6706S2TR1PbF DirectFET Power MOSFET
Typical R S(on) (mω) V S, ate-to-source Voltage (V) l RoHS Compliant and Halogen Free l Low Profile (
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRF6623PbF IRF6623TRPbF
l RoHS Compliant l LeadFree (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (
More informationIRL8113 IRL8113S IRL8113L
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.8 C/W)
PD -97538A IRFH5025PbF HEXFET Power MOSFET V DS 250 V R DS(on) max (@V GS = V) 0 mω Q g (typical) 37 nc R G (typical).6 Ω I D (@T c(bottom) = 25 C) 25 A PQFN 5X6 mm Applications Secondary Side Synchronous
More informationmj I AS Avalanche Currenth 13.4
Typical R S (on) (mω), atetosource Voltage (V) l RoHS Compliant l LeadFree (Qualified up to 26 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More information5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V)
9MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationIRFR3710ZPbF IRFU3710ZPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationV DSS V GS R DS(on) R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRF6717MPbF IRF6717MTRPbF DirectFET Power MOSFET
Typical R S(on) (m ) V GS, GatetoSource Voltage (V) l RoHs Compliant and Halgen Free l Low Profile (
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationmj I AR Avalanche Currentc 22 Linear Derating Factor
P 95823C IRF6620 l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More information8 S1, D2. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode Ideal for Synchronous Buck DC-DC Converters Up to A Peak Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier D D 2
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
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