IRF6618PbF IRF6618TRPbF
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- Brian Stanley
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1 Typical R S(on) (mω), atetosource Voltage (V) l RoHs Compliant l LeadFree (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques P IRF668TRPbF irectfet Power MOSFET V SS R S(on) R S(on) 30V max ±20V max 2.2mΩ@ 0V 3.4mΩ@ 4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 43nC 5nC 4.0nC 46nC 28nC.64V pplicable irectfet Package/Layout Pad (see p.7, 8 for details) irectfet ISOMETRIC SQ SX ST MQ MX MT escription The combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques. pplication note N035 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The balances industry leading onstate resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency CC converters that power high current loads such as the latest generation of microprocessors. The has been optimized for parameters that are critical in synchronous buck converter s SyncFET sockets. bsolute Maximum Ratings Parameter Max. Units V S raintosource Voltage 30 V atetosource Voltage ±20 T C = 25 C Continuous rain 0V e 70 T = 25 C Continuous rain Current, 0V e 30 T = 70 C Continuous rain 0V f 24 I M Pulsed rain Current g 240 E S Single Pulse valanche Energy h 20 mj I R valanche Currentg 24 MT T J = 25 C I = I = 24 V S = 24V V S = 5V T J = 25 C , ate to Source Voltage (V) Q Total ate Charge (nc) Fig. Typical OnResistance vs. atetosource Voltage Fig 2. Total ate Charge vs. atetosource Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L = 0.75mH, R = 25Ω, I S = /7/07
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS raintosource Breakdown Voltage 30 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 23 mv/ C R S(on) Static raintosource OnResistance mω 3.4 = 4.5V, I = 24 i (th) ate Threshold Voltage V V S =, I = 250µ (th) / T J ate Threshold Voltage Coefficient 5.7 mv/ C 5.0 V S = 30V, = 0V I SS raintosource Leakage Current.0 µ V S = 24V, = 0V 50 V S = 24V, = 0V, T J = 50 C I SS atetosource Forward Leakage 00 n = 20V atetosource Reverse Leakage 00 = 20V gfs Forward Transconductance 00 S V S = 5V, I = 24 Q g Total ate Charge Q gs PreVth atetosource Charge 2 V S = 5V Q gs2 PostVth atetosource Charge 4.0 nc = 4.5V Q gd atetorain Charge 5 23 I = 24 Q godr ate Charge Overdrive 2 See Fig. 4 Q sw Switch Charge (Q gs2 Q gd ) 9 Q oss Output Charge 28 nc V S = 5V, = 0V R ate Resistance Ω t d(on) TurnOn elay Time 2 V = 5V, = 4.5VÃi t r Rise Time 7 I = 24 t d(off) TurnOff elay Time 27 ns Clamped Inductive Load t f Fall Time 8. See Fig. 5 & 6 C iss Input Capacitance 5640 = 0V C oss Output Capacitance 260 pf V S = 5V C rss Reverse Transfer Capacitance 570 ƒ =.0MHz iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 89 (Body iode) I SM Pulsed Source Current 240 (Body iode)ãg V S iode Forward Voltage V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Conditions = 0V, I = 250µ Reference to 25 C, I = m = 0V, I = 30 i Conditions MOSFET symbol showing the integral reverse pn junction diode. T J = 25 C, I S = 24, = 0V i T J = 25 C, I F = 24 di/dt = 00/µs iãsee Fig. 7 S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. 2
3 bsolute Maximum Ratings Parameter Max. Units = 25 C Power issipation e 2.8 = 70 C Power issipation e.8 W C = 25 C Power issipation f 89 T P Peak Soldering Temperature 270 C T J Operating Junction and 40 to 50 T ST Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junctiontombient em 45 R θj Junctiontombient km 2.5 R θj Junctiontombient lm 20 C/W R θjc JunctiontoCase fm.4 R θjpcb JunctiontoPCB Mounted.0 Linear erating Factor e W/ C Thermal Response ( Z thj ) = R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ τ 3 2 τ 3 Ci= τi/ri Ci= τi/ri SINLE PULSE ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc E006 E t, Rectangular Pulse uration (sec) Ri ( C/W) τi (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junctiontombient R 4 R 4 τ 4 τ 4 τ τ Notes: Used double sided cooling, mounting pad. Š Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R θ is measured at T J of approximately 90 C. ƒ Surface mounted on in. square Cu Mounted to a PCB with Š Mounted on minimum (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air) 3
4 C, Capacitance(pF) I, raintosource Current (Α) R S(on), raintosource On Resistance (Normalized) I, raintosource Current () I, raintosource Current () VS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 000 VS TOP 0V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V V 2.7V µs PULSE WITH Tj = 25 C V S, raintosource Voltage (V) Fig 4. Typical Output Characteristics 60µs PULSE WITH Tj = 50 C V S, raintosource Voltage (V).5 Fig 5. Typical Output Characteristics I = 30 = 0V 00 T J = 50 C T J = 25 C 0.0 V S = 0V 60µs PULSE WITH , atetosource Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized OnResistance vs. Temperature = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0000 C iss C oss 000 C rss V S, raintosource Voltage (V) Fig 8. Typical Capacitance vs. raintosource Voltage 4
5 E S, Single Pulse valanche Energy (mj) I, rain Current () (th) ate threshold Voltage (V) I S, Reverse rain Current () I, raintosource Current () OPERTION IN THIS RE LIMITE BY R S (on) T J = 50 C 00 00µsec T.00 J = 25 C = 0V V S, Sourcetorain Voltage (V) Fig 9. Typical Sourcerain iode Forward Voltage 80 0 Tj = 50 C Single Pulse 0msec V S, raintosource Voltage (V) 2.5 T C = 25 C msec Fig 0. Maximum Safe Operating rea I = 250µ T C, Case Temperature ( C) Fig. Maximum rain Current vs. Case Temperature T J, Temperature ( C ) Fig 2. Threshold Voltage vs. Temperature I TOP 9.3 BOTTOM Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy vs. rain Current 5
6 Current Regulator Same Type as.u.t. Vds Id 2V.2µF 50KΩ.3µF Vgs.U.T. V S Vgs(th) 3m I I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 4a. ate Charge Test Circuit Fig 4b. ate Charge Waveform 5V tp V (BR)SS V S L RIVER R 20V tp.u.t I S 0.0Ω V I S Fig 5a. Unclamped Inductive Test Circuit Fig 5b. Unclamped Inductive Waveforms L V S V V S 90%.U.T 0% Pulse Width < µs uty Factor < 0.% t d(on) t r t d(off) t f Fig 6a. Switching Time Test Circuit Fig 6b. Switching Time Waveforms 6
7 .U.T ƒ Circuit Layout Considerations Low Stray Inductance round Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river ate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period =0V V * R di/dt controlled by R river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V Repplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * = 5V for Logic Level evices Fig 7. iode Reverse Recovery Test Circuit for NChannel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, MT Outline ƒ (Medium Size Can, Tesignation). Please see irectfet application note N035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. = TE = RIN S = SOURCE S S 7
8 irectfet Outline imension, MT Outline (Medium Size Can, Tesignation). Please see irectfet application note N035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F H J K L M R P IMENSIONS METRIC IMPERIL MX MX irectfet Part Marking 8
9 irectfet Tape & Reel imension (Showing component orientation) NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF668TRPBF). For 000 parts on 7" reel, order IRF668TRPBF COE B C E F H REEL IMENSIONS STNR OPTION (QTY 4800) TR OPTION (QTY 000) METRIC IMPERIL METRIC IMPERIL MX MX MX LOE TPE FEE IRECTION MX COE B C E F H IMENSIONS METRIC MX IMPERIL MX ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information. 08/
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Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationApplicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8. IRF7749L1TRPbF DirectFET Large Can Tape and Reel 4000 IRF7749L1TRPbF
Typical R (on), (mω) pplications l RoH Compliant, Halogen Free l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter Primary witch ocket l Optimized for ynchronous
More informationIRFHM9331PbF. HEXFET Power MOSFET. V DS -30 V R DS(on) max mω. Q g (typical) 32 nc I D -11 A. Absolute Maximum Ratings
P 9633 HEXFET Power MOFET V 3 V R (on) max (@V G = V) 4.6 mω Q g (typical) 32 nc I (@T A = 25 C) A 5 6 7 8 G 4 3 2 G 3mm x 3mm PQFN Applications l ystem/load switch Features and Benefits Features Benefits
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationIRF7240PbF HEXFET Power MOSFET
l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P- 95253 IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V -0.5 0.025@V GS = -4.5V
More informationV DSS R DS(on) max Qg 30V GS = 10V 5.4nC
PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationIRLL3303. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.031Ω I D = 4.6A SOT-223. Thermal Resistance PD C
l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationIRF7811AVPbF IRF7811AVPbF
P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More information120 P C = 25 C Power Dissipation 360 P C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97B IRFP4332PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationW Linear Derating Factor 0.016
HEXFET Power MOSFET l Generation V Technology l Ultra Low OnResistance 8 S l ual PChannel Mosfet 2 7 G l Surface Mount l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
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