IRF6706S2TRPbF IRF6706S2TR1PbF DirectFET Power MOSFET

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1 Typical R S(on) (mω) V S, ate-to-source Voltage (V) l RoHS Compliant and Halogen Free l Low Profile (<.7 mm) l ual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core C-C Converters l Optimized for Control FET pplication l Compatible with existing Surface Mount Techniques l % Rg tested IRF676S2TRPbF IRF676S2TRPbF irectfet Power MOSFET Typical values (unless otherwise specified) P V SS V S R S(on) R S(on) 25V max ±2V max 3.mΩ@V 5.2mΩ@4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 3nC 4.4nC.8nC 2nC 9.5nC.8V S pplicable irectfet Outline and Substrate Outline S S2 SB M2 M4 L4 L6 L8 5 5 T J = 25 C T J = 25 C V S, ate -to -Source Voltage (V) I = 7 irectfet ISOMETRIC escription The IRF676S2TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 8%. The IRF676S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency C-C converters that power the latest generation of processors operating at higher frequencies. The IRF676S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 2 volt bus converters. bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 25 V V S ate-to-source Voltage ±2 T = 25 C Continuous rain Current, V V e 7 T = 7 C Continuous rain Current, V V e 3 T C = 25 C Continuous rain Current, V V f 63 I M Pulsed rain Current g 3 E S Single Pulse valanche Energy h 42 mj I R valanche Currentg Q Total ate Charge (nc) Fig. Typical On-Resistance vs. ate Voltage Fig 2. Typical Total ate Charge vs ate-to-source Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L =.5mH, R = 25Ω, I S = I = 3 S V S = 2V V S = 3V 3/3/2

2 IRF676S2TR/TRPbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 25 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 8 mv/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance mω V S = V, I = 7 i V S = 4.5V, I = 3 i V S(th) ate Threshold Voltage V V S = V S, I = 25µ V S(th) / T J ate Threshold Voltage Coefficient -9. mv/ C I SS rain-to-source Leakage Current. µ V S = 2V, V S = V 5 V S = 2V, V S = V, T J = 25 C I SS ate-to-source Forward Leakage n V S = 2V ate-to-source Reverse Leakage - V S = -2V gfs Forward Transconductance 78 S V S = 3V, I =3 Q g Total ate Charge 3 2 Q gs Pre-Vth ate-to-source Charge 3. V S = 3V Q gs2 Post-Vth ate-to-source Charge.8 nc V S = 4.5V Q gd ate-to-rain Charge 4.4 I = 3 Q godr ate Charge Overdrive 3.7 See Fig. 8 Q sw Switch Charge (Q gs2 Q gd ) 6.2 Q oss Output Charge 9.5 nc V S = 6V, V S = V R ate Resistance.4 Ω t d(on) Turn-On elay Time 2 V = 3V, V S = 4.5VÃi t r Rise Time 2 I = 3 t d(off) Turn-Off elay Time 9.9 ns R = 6.8Ω t f Fall Time 9.2 C iss Input Capacitance 8 V S = V C oss Output Capacitance 47 pf V S = 3V C rss Reverse Transfer Capacitance 2 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 33 Conditions V S = V, I = 25µ ƒ =.MHz Conditions MOSFET symbol (Body iode) showing the I SM Pulsed Source Current 3 integral reverse (Body iode)ãg p-n junction diode. V S iode Forward Voltage. V T J = 25 C, I S = 3, V S = V i t rr Reverse Recovery Time 7 26 ns T J = 25 C, I F =3 Q rr Reverse Recovery Charge 2 32 nc di/dt = 25/µs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4µs; duty cycle 2%. 2

3 IRF676S2TR/TRPbF bsolute Maximum Ratings Parameter Max. Units = 25 C Power issipation e.8 W = 7 C Power issipation e.3 C = 25 C Power issipation f 26 T P Peak Soldering Temperature 27 C T J Operating Junction and -55 to 75 Storage Temperature Range T ST Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient el 82 R θj Junction-to-mbient jl 2.5 R θj Junction-to-mbient kl 2 C/W R θjc Junction-to-Case fl 5.7 R θj-pcb Junction-to-PCB Mounted. Linear erating Factor e.2 W/ C Thermal Response ( Z thj ). = SINLE PULSE ( THERML RESPONSE ). E-6 E t, Rectangular Pulse uration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient (t lower pulse widths Zth J & Zth JC are combined) Notes: ƒ Surface mounted on in. square Cu board, steady state. T C measured with thermocouple incontact with top (rain) of part. ˆ Used double sided cooling, mounting pad with large heatsink. τ τ R R Ci= τi/ri Ci= τi/ri τ2 τ 2 R2 R2 R3 R 3 τ3 τ3 R 4 R 4 τ4 τ4 R 5 R5 τ5 τ5 R 6 R6 τ6 τ6 R 7 R7 τ7 τ7 R 8 R8 τ8 τ8 Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R θ is measured at T J of approximately 9 C. R9 R9 τ τ Ri ( C/W) τi (sec) ƒ Surface mounted on in. square Cu Mounted on minimum footprint full size board with metalized board (still air). back and with small clip heatsink. (still air) 3

4 C, Capacitance(pF) Typical R S (on) (mω) I, rain-to-source Current () Typical R S(on) (Normalized) I, rain-to-source Current () I, rain-to-source Current () IRF676S2TR/TRPbF VS TOP V 5.V 4.5V 4.V 3.5V 3.V 2.8V BOTTOM 2.5V VS TOP V 5.V 4.5V 4.V 3.5V 3.V 2.8V BOTTOM 2.5V 2.5V 6µs PULSE WITH Tj = 25 C.. V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 2.5V 6µs PULSE WITH Tj = 75 C. V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics V S = 5V 6µs PULSE WITH T J = 75 C T J = 25 C T J = -4 C 2..5 I = 7 V S = V V S = 4.5V V S, ate-to-source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature V S = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss Vgs = 4.V Vgs = 4.5V Vgs = 5.V Vgs = V T J = 25 C C oss C rss 5 V S, rain-to-source Voltage (V) I, rain Current () Fig 8. Typical Capacitance vs.rain-to-source Voltage Fig 9. Typical On-Resistance vs. rain Current and ate Voltage 4

5 fs, Forward Transconductance (S) E S, Single Pulse valanche Energy (mj) I, rain Current () Typical V S(th) ate threshold Voltage (V) I S, Reverse rain Current () I, rain-to-source Current () T J = 75 C T J = 25 C T J = -4 C V S = V V S, Source-to-rain Voltage (V) IRF676S2TR/TRPbF OPERTION IN THIS RE LIMITE BY R S (on) C msec µsec msec. T = 25 C T J = 5 C Single Pulse V S, rain-to-source Voltage (V) Fig. Typical Source-rain iode Forward Voltage Fig. Maximum Safe Operating rea I = 25µ I = 25µ I =.m I = T C, Case Temperature ( C) Fig 2. Maximum rain Current vs. Case Temperature T J = 25 C 8 6 T J = 75 C T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature I TOP BOTTOM 3 2 V S = 4.5V 2 38µs PULSE WITH I,rain-to-Source Current () Starting T J, Junction Temperature ( C) Fig 4. Typ. Forward Transconductance Fig 5. Maximum valanche Energy vs. rain Current vs. rain Current

6 E R, valanche Energy (mj) valanche Current () IRF676S2TR/TRPbF uty Cycle = Single Pulse llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse)..5.. llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E-.E.E.E2 tav (sec) Fig 6. Typical valanche Current vs.pulsewidth Single Pulse I = Starting T J, Junction Temperature ( C) Fig 7. Maximum valanche Energy vs. Temperature Notes on Repetitive valanche Curves, Figures 6, 7: (For further info, see N-5 at valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in valanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 9a, 9b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 6, 7). t av = verage time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see figure ) P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2T/ [.3 BV Z th ] E S (R) = P (ave) t av 6

7 IRF676S2TR/TRPbF Id Vds Vgs 2K K UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 8a. ate Charge Test Circuit Fig 8b. ate Charge Waveform V (BR)SS 5V tp V S L RIVER R 2V tp.u.t I S.Ω - V I S Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms R V S V S.U.T. V S 9% R - V VV S Pulse Width µs uty Factor. % % V S t d(off) t f t d(on) t r Fig 2a. Switching Time Test Circuit Fig 2b. Switching Time Waveforms 7

8 IRF676S2TR/TRPbF -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance round Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river ate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V S =V V * R di/dt controlled by R river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V S = 5V for Logic Level evices Fig 9. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Board Footprint, S Outline (Small Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. =TE =RIN S=SOURCE S 8

9 IRF676S2TR/TRPbF irectfet Outline imension, S Outline (Small Size Can). Please see N-35 for irectfet assembly details and stencil and substrate design recommendations COE B C E F H J K L M P R IMENSIONS METRIC IMPERIL MIN MX MIN MX N/.8.7 N/.9.8 N/.3.67 N/ irectfet Part Marking TE MRKIN LOO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" 9

10 IRF676S2TR/TRPbF irectfet Tape & Reel imension (Showing component orientation). F LOE TPE FEE IRECTION B H F C E C B H NOTE: Controlling dimensions in mm Std reel quantity is 48 parts. (ordered as IRF676S2TRPBF). For parts on 7" reel, order IRF676S2TRPBF REEL IMENSIONS STNR OPTION (QTY 48) TR OPTION (QTY ) METRIC IMPERIL METRIC IMPERIL COE MIN MX MIN MX MIN MX MIN MX 33. N.C N.C N.C 6.9 N.C B 2.2 N.C.795 N.C 9.6 N.C.75 N.C C N.C.59 N.C.5 N.C.59 N.C E. N.C N.C N.C 2.3 N.C F N.C 8.4 N.C.724 N.C 3.5 N.C N.C H N.C E NOTE: CONTROLLIN IMENSIONS IN MM COE B C E F H IMENSIONS METRIC MIN MX N.C.5.6 IMPERIL MIN MX N.C.63 ata and specifications subject to change without notice. This product has been designed and qualified to MSL rating for the Consumer market. dditional storage requirement details for irectfet products can be found in application note N35 on IR s Web site. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.3/2