AUTOMOTIVE GRADE V (BR)DSS. Q g (typical) Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description

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1 UTOMOTIVE RE dvanced Process Technology Optimized for Class udio mplifier and High Speed Switching pplications Low Rds(on) for Improved Efficiency Low Qg for Better TH and Improved Efficiency Low Qrr for Better TH and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI elivers up to W per Channel into 8 Load ual Sided Cooling 75 C Operating Temperature Repetitive valanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free utomotive Qualified * UIRF764S2TR V (BR)SS 6V R S(on) typ. 27m max. 36m R (typical) nC Q g (typical) utomotive irectfet Power MOSFET pplicable irectfet Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 escription irectfet ISOMETRIC The UIRF764S2TR/TR combines the latest utomotive HEXFET Power MOSFET Silicon technology with the advanced irectfet packaging platform to produce a best in class part for utomotive Class audio amplifier applications. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class audio amplifier performance factors such as efficiency, TH and EMI. Moreover the irectfet packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in utomotive Class audio amplifier and other high speed switching systems. Base Part Number Package Type Standard Pack Form Quantity Orderable Part Number UIRF764S2 irectfet Small Can Tape and Reel 48 UIRF764S2TR bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Parameter Max. Units V S rain-to-source Voltage 6 V S ate-to-source Voltage ±2 V T C = 25 C Continuous rain Current, V V (Silicon Limited) 2 T C = C Continuous rain Current, V V (Silicon Limited) 5 T = 25 C Continuous rain Current, V V (Silicon Limited) 5.8 T C = 25 C Continuous rain Current, V V (Package Limited) 77 I M Pulsed rain Current 84 C = 25 C Power issipation 3 = 25 C Power issipation 2.4 W E S Single Pulse valanche Energy (Thermally Limited) 38 E S (Tested) Single Pulse valanche Energy 57 mj I R valanche Current See Fig. 6, 7, 8a, 8b E R Repetitive valanche Energy mj T P Peak Soldering Temperature 27 T J Operating Junction and -55 to + 75 C T ST Storage Temperature Range HEXFET is a registered trademark of Infineon. *Qualification standards can be found at SB

2 UIRF764S2TR Thermal Resistance Symbol Parameter Typ. Max. Units R J Junction-to-mbient 63 R J Junction-to-mbient 2.5 R J Junction-to-mbient 2 C/W R J-Can Junction-to-Can 5. R J-PCB Junction-to-PCB Mounted.4 Linear erating Factor.2 W/ C Static Electrical T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 6 V V S = V, I = 25µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient. V/ C Reference to 25 C, I =.m R S(on) Static rain-to-source On-Resistance m V S = V, I = 3 V S(th) ate Threshold Voltage V V S = V S, I = 25µ V S(th) / T J ate Threshold Voltage Coefficient - mv/ C gfs Forward Transconductance 9.3 S V S = 5V, I = 3 R Internal ate Resistance V S = 6V, V S = V I SS rain-to-source Leakage Current µ 25 V S = 48V, V S = V, T J = 25 C I SS ate-to-source Forward Leakage V S = 2V n ate-to-source Reverse Leakage - V S = -2V ynamic Electrical T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Q g Total ate Charge 7.3 V S = 3V Q gs ate-to-source Charge.5 V S = V Q gs2 ate-to-source Charge.9 I = 3 nc Q gd ate-to-rain ("Miller") Charge 3. See Fig. 6 and 7 Q godr ate Charge Overdrive.9 Q sw Switch Charge (Q gs2 + Q gd ) 3.9 Q oss Output Charge 5.3 nc V S = 6V, V S = V t d(on) Turn-On elay Time 4. V = 3V t r Rise Time 2 I = 3 ns t d(off) Turn-Off elay Time 6.3 R = 6.8 t f Fall Time 6.2 V S = V C iss Input Capacitance 45 V S = V C oss Output Capacitance 6 V S = 25V C rss Reverse Transfer Capacitance 48 pf ƒ =. MHz C oss Output Capacitance 6 V S = V, V S =.V, ƒ =. MHz C oss Output Capacitance 2 V S = V, V S = 48V, ƒ =. MHz Notes through are on page

3 UIRF764S2TR iode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 2 (Body iode) showing the Pulsed Source Current integral reverse I SM 84 S (Body iode) p-n junction diode. V S iode Forward Voltage.3 V T J = 25 C, I S = 3, V S = V t rr Reverse Recovery Time ns T J = 25 C, I F = 3, V = 25V Q rr Reverse Recovery Charge nc dv/dt = /µs Surface mounted on in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. Surface mounted on in. square Cu board, steady state. T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.454mH, R = 25, I S = 3. Pulse width 4µs; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heat sink. R is measured at T J of approximately 9 C

4 I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) R S(on), rain-to -Source On Resistance (m ) I, rain-to-source Current () I, rain-to-source Current () UIRF764S2TR VS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V VS TOP 5V V 8.V 7.V 6.5V 6.V 5.5V BOTTOM 5.V.. 5.V 6µs PULSE WITH Tj = 25 C.. V S, rain-to-source Voltage (V) 5.V 6µs PULSE WITH Tj = 75 C.. V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics I = 3 R S (on), rain-to -Source On Resistance (m ) Vgs = V T J = 25 C 4 T J = 25 C 6 2 T J = 25 C 4 T J = 25 C V S, ate -to -Source Voltage (V) I, rain Current () Fig. 3 Typical On-Resistance vs. ate Voltage Fig. 4 Typical On-Resistance vs. rain Current 2.5 I = 3 V S = V 2... T J = -4 C TJ = 25 C TJ = 75 C V S = 25V 6µs PULSE WITH V S, ate-to-source Voltage (V) T J, Junction Temperature ( C) Fig 5. Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature

5 V S, ate-to-source Voltage (V) I, rain Current () fs, Forward Transconductance (S) C, Capacitance (pf) V S(th), ate threshold Voltage (V) I S, Reverse rain Current () UIRF764S2TR T J = -4 C TJ = 25 C TJ = 75 C I = 25µ I = 25µ I =.m = T J, Temperature ( C ) V S = V V S, Source-to-rain Voltage (V) Fig. 7 Typical Threshold Voltage vs. Junction Temperature 8 6 T J = 25 C 4 2 T J = 75 C 8 Fig 8. Typical Source-rain iode Forward Voltage V S = V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd C iss C oss V S = 5.V 38µs PULSE WITH I,rain-to-Source Current () C rss V S, rain-to-source Voltage (V) Fig 9. Typical Forward Trans conductance vs. rain Current 4 I = 3 V S = 8V 2 V S = 5V VS= 2V 8 6 Fig. Typical Capacitance vs. rain-to-source Voltage Q, Total ate Charge (nc) Fig. Typical ate Charge vs. ate-to-source Voltage T C, Case Temperature ( C) Fig 2. Maximum rain Current vs. Case Temperature

6 I, rain-to-source Current () valanche Current () UIRF764S2TR OPERTION IN THIS RE LIMITE BY R S (on) E S, Single Pulse valanche Energy (mj) I TOP BOTTOM 3 msec µsec 8 6. Tc = 25 C Tj = 75 C Single Pulse C msec V S, rain-tosource Voltage (V) Starting T J, Junction Temperature ( C) Fig 3. Maximum Safe Operating rea Fig 4. Maximum valanche Energy vs. Temperature Thermal Response ( Z thjc ) C/W = SINLE PULSE ( THERML RESPONSE ) J J Ci= i Ri Ci= i Ri R R 2 R 3 R R 2 R 3. E-6 E t, Rectangular Pulse uration (sec) R 4 Ri ( C/W) i (sec) R 4 C C Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Case uty Cycle = Single Pulse llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse)..5. llowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 6. Typical valanche Current vs. Pulse Width

7 E R, valanche Energy (mj) TOP Single Pulse BOTTOM % uty Cycle I = Starting T J, Junction Temperature ( C) Fig 7. Maximum valanche Energy vs. Temperature UIRF764S2TR Notes on Repetitive valanche Curves, Figures 6, 7: (For further info, see N-5 at valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in valanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 8a, 8b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. Iav = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 6, 7). tav = verage time in avalanche. = uty cycle in avalanche = tav f ZthJC(, tav) = Transient thermal resistance, see Figures 5) P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E S (R) = P (ave) t av Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms V Fig 9a. ate Charge Test Circuit Fig 9b. ate Charge Waveform Fig 2a. Switching Time Test Circuit Fig 2b. Switching Time Waveforms

8 irectfet Board Footprint, SB (Small Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. UIRF764S2TR =TE =RIN S=SOURCE S

9 UIRF764S2TR irectfet Outline imension, SB Outline (Small Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F H J K L M P R IMENSIONS METRIC IMPERIL MIN MX MIN MX N/ N/.5.95 N/ N/ irectfet Part Marking "U" = TE N UTOMOTIVE MRKIN LOO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free"

10 UIRF764S2TR irectfet Tape & Reel imension (Showing component orientation) F LOE TPE FEE IRECTION B F C E C B H NOTE: Controlling dimensions in mm Std reel quantity is 48 parts, ordered as UIRF764S2TR. COE B C E F H REEL IMENSIONS STNR OPTION (QTY 48) METRIC MIN MX MIN IMPERIL MX H E NOTE: CONTROLLIN IMENSIONS IN MM COE B C E F H IMENSIONS METRIC MIN MX IMPERIL MIN MX

11 UIRF764S2TR Qualification Information utomotive (per EC-Q) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level FET2 Small Can MSL Machine Model Class B EC-Q-2 ES Human Body Model Class 2 EC-Q- Charged evice Model Class IV EC-Q-5 RoHS Compliant Yes Highest passing voltage. Revision History ate Comments 9/3/25 Updated datasheet with corporate template Corrected ordering table on page. Updated Tape and Reel option on page Corrected typo on the note 6 from L=.944mH & I= 8.9 to L=.454mH & I= 3 on page3 Published by Infineon Technologies 8726 München, ermany Infineon Technologies 25 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WRNINS ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury