IRF6655PbF IRF6655TRPbF

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1 Typical R S(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V-75V in Synchronous Buck applications l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques pplicable irectfet Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT MN IRF6655TRPbF irectfet Power MOSFET Typical values (unless otherwise specified) V SS V GS R S(on) V max ±20V max 53mΩ@ V irectfet ISOMETRIC escription The combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The is optimized for low power primary side bridge topologies in isolated C-C applications, and for high side control FET sockets in non-isolated synchronous buck C-C applications for use in wide range universal Telecom systems (36V 75V), and for secondary side synchronous rectification in regulated C-C topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated C-C converters. bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage V V GS Gate-to-Source Voltage ±20 T = 25 C Continuous rain Current, V V e 4.2 T = 70 C Continuous rain Current, V V e 3.4 T C = 25 C Continuous rain Current, V V f 9 I M Pulsed rain Current g 34 E S Single Pulse valanche Energy h mj I R valanche Currentg 5.0 SH P Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 8.7nC 2.8nC 0.58nC 37nC 4.5nC 4.0V T J = 25 C T J = 25 C I = I = 5.0 V S = 80V V S = 50V V S = 20V V GS, Gate -to -Source Voltage (V) Q G Total Gate Charge (nc) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L = 0.89mH, R G = 25Ω, I S = /25/06

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage V Conditions V GS = 0V, I = 250µ ΒV SS / T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance mω V GS = V, I = 5.0 i V GS(th) Gate Threshold Voltage V V S = V GS, I = 25µ V GS(th) / T J Gate Threshold Voltage Coefficient - mv/ C I SS rain-to-source Leakage Current 20 µ V S = V, V GS = 0V 250 V S = 80V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage n V GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 6.6 S V S = V, I = 5.0 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 2. V S = 50V Q gs2 Post-Vth Gate-to-Source Charge 0.58 nc V GS = V Q gd Gate-to-rain Charge I = 5.0 Q godr Gate Charge Overdrive 3.2 See Fig. 5 Q sw Switch Charge (Q gs2 Q gd ) 3.4 Q oss Output Charge 4.5 nc V S = 6V, V GS = 0V R G Gate Resistance Ω t d(on) Turn-On elay Time 7.4 t r Rise Time 2.8 t d(off) Turn-Off elay Time 4 ns t f Fall Time 4.3 C iss Input Capacitance 530 C oss Output Capacitance pf C rss Reverse Transfer Capacitance 29 C oss Output Capacitance 5 C oss Output Capacitance 67 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 38 (Body iode) I SM Pulsed Source Current 34 (Body iode)g V S iode Forward Voltage.3 V t rr Reverse Recovery Time 3 47 ns Q rr Reverse Recovery Charge nc V = 50V, V GS = Vi I = 5.0 R G =6.0Ω See Fig. 6 & 7 V GS = 0V V S = 25V ƒ =.0MHz V GS = 0V, V S =.0V, f=.0mhz V GS = 0V, V S = 80V, f=.0mhz MOSFET symbol showing the integral reverse Conditions G S p-n junction diode. T J = 25 C, I S = 5.0, V GS = 0V i T J = 25 C, I F = 5.0, V = 25V di/dt = /µs isee Fig. 8 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. 2

3 bsolute Maximum Ratings Parameter Max. Units = 25 C Power issipation e 2.2 W = 70 C Power issipation e.4 C = 25 C Power issipation f 42 T P Peak Soldering Temperature 270 C T J Operating Junction and -40 to 50 Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient em 58 R θj Junction-to-mbient km 2.5 R θj Junction-to-mbient lm 20 C/W R θjc Junction-to-Case fm 3.0 R θj-pcb Junction-to-PCB Mounted.4 Linear erating Factor e 0.07 W/ C = 0.50 Thermal Response ( Z thj ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri SINGLE PULSE ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc E-006 E t, Rectangular Pulse uration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient R 4 R 4 τ 4 τ 4 R 5 R 5 τ 5 τ 5 τ τ Ri ( C/W) τi (sec) Notes: Used double sided cooling, mounting pad. Š Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R θ is measured at T J of approximately 90 C. ƒ Surface mounted on in. square Cu (still air). Mounted to a PCB with small clip heatsink (still air) Š Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3

4 C, Capacitance(pF) I, rain-to-source Current (Α) Typical R S(on), (Normalized) I, rain-to-source Current () I, rain-to-source Current () VGS TOP 5V V 9.0V 8.0V 7.0V BOTTOM 6.0V VGS TOP 5V V 9.0V 8.0V 7.0V BOTTOM 6.0V 6.0V 6.0V 60µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 60µs PULSE WITH Tj = 50 C V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics 2.0 I = 5.0 V GS = V.5 T J = -40 C T J = 25 C T J = 50 C.0 V S = 25V 60µs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature 00 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 C iss C oss C rss R S (on), rain-to -Source On Resistance ( mω) 20 T J = 25 C T J = 25 C Vgs = V V S, rain-to-source Voltage (V) I, rain Current () Fig 8. Typical Capacitance vs. rain-to-source Voltage Fig 9. Normalized Typical On-Resistance vs. rain Current and Gate Voltage 4

5 I, rain Current () Typical V GS(th) Gate threshold Voltage (V) I S, Reverse rain Current () I, rain-to-source Current () 0 Tc = 25 C Tj = 75 C Single Pulse OPERTION IN THIS RE LIMITE BY R S (on) µsec T J = -40 C T J = 25 C T J = 50 C 0. msec msec msec V GS = 0V V S, Source-to-rain Voltage (V) Fig. Typical Source-rain iode Forward Voltage V S, rain-to-source Voltage (V) Fig. Maximum Safe Operating rea I = 25µ I = 250µ I =.0m I = T, mbient Temperature ( C) Fig 2. Maximum rain Current vs. mbient Temperature T J, Temperature ( C ) Fig 3. Threshold Voltage vs. Temperature E S, Single Pulse valanche Energy (mj) I TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy vs. rain Current 5

6 Current Regulator Same Type as.u.t. Vds Id 2V.2µF 50KΩ.3µF Vgs.U.T. V - S V GS Vgs(th) 3m I G I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 5a. Gate Charge Test Circuit Fig 5b. Gate Charge Waveform V (BR)SS 5V tp V S L RIVER R G 20V V GS tp.u.t I S 0.0Ω - V I S Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms V S R V S 90% V GS.U.T. R G - V % V GS V Pulse Width µs t d(on) t r t d(off) t f uty Factor 0. % Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms 6

7 -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 8. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, SH Outline ƒ (Small Size Can, H-esignation). Please see irectfet application note N-35 for all details regarding PCB assembly using irectfet. This includes all recommendations for stencil and substrate designs. G = GTE = RIN S = SOURCE G S 7

8 irectfet Outline imension, SH Outline (Small Size Can, H-esignation). Please see irectfet application note N-35 for all details regarding PCB assembly using irectfet. This includes all recommendations for stencil and substrate designs. COE B C E F G H K L M R P IMENSIONS METRIC IMPERIL MX ÃMX irectfet Part Marking 8

9 irectfet Tape & Reel imension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6655TRPBF). For 0 parts on 7" reel, order IRF6655TRPBF REEL IMENSIONS STNR OPTION (QTY 4800) TR OPTION (QTY 0) METRIC IMPERIL METRIC IMPERIL COE B C E F G H MX MX MX MX Loaded Tape Feed irection COE B C E F G H IMENSIONS METRIC MX IMPERIL MX ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.08/06 9

10 Note: For the most current drawings please refer to the IR website at: