Absolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units

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1 Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. Power dissipation of greater than 0.8W is possibe in a typica PCB mount appication. S S S G Top View IRF743PbF HEXFET Power MOSFET P C V SS = 30V R S(on) = 0.0Ω SO-8 bsoute Maximum Ratings Symbo Parameter Max Units V S rain-to-source Votage 30 V GS Gate-to-Source Votage ± 20 V T = 25 C Continuous rain Current, V 0V 3 T = 70 C Continuous rain Current, V 0V 9.2 I M Pused rain Current c 58 = 25 C Power issipation 2.5 W Linear erating Factor 0.02 mw/ C E S Singe Puse vaanche Energency d 260 mj dv/dt Peak iode Recovery dv/dt e 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Therma Resistance Ratings Symbo Parameter Typ Max Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient g C/W //08

2 Eectrica TJ = 25 C (uness otherwise specified) Symbo Parameter Min Typ Max Units Conditions V (BR)SS rain-to-source Breakdown Votage 30 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0.0 V GS = 0V, I = 7.3 f Ω 0.08 VGS = 4.5V, I = 3.7 f V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance 0 S V S = 0V, I = 3.7 I SS rain-to-source Leakage Current 2 V S = 30V, V GS = 0V µ 25 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Tota Gate Charge I = 7.3 Q gs Gate-to-Source Charge nc V S = 24V Q gd Gate-to-rain ("Mier") Charge 6 23 V GS = 0V, See Fig. 6 and 9 f R G Gate Resistance 3.7 Ω t d(on) Turn-On eay Time 8.6 V = 5V t r Rise Time 50 I = 7.3 t d(off) Turn-Off eay Time 52 ns R G = 6.2 Ω t f Fa Time 46 R G = 2.0Ω, See Fig. 0 f C iss Input Capacitance 800 V GS = 0V C oss Output Capacitance 680 pf V S = 25V C rss Reverse Transfer Capacitance 240 =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Symbo Parameter Min. Typ. Max. Units Conditions I S I SM Continuous Source Current MOSFET symbo 3. (Body iode) showing the Pused Source Current integra reverse 58 (Body iode)ãc p-n junction diode. V S iode Forward Votage.0 V T J = 25 C, I S = 7.3, V GS = 0V e t rr Reverse Recovery Time 74 0 ns T J = 25 C, I F = 7.3 Q rr Reverse Recovery Charge nc di/dt = 00/µs e Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 9.8mH R G = 25Ω, I S =7.3. (See Figure 2) I S 7.3, di/dt 00/µs, V V (BR)SS, T J 50 C Puse width 300µs; duty cyce 2%. Surface mounted on FR-4 board R θ is measured at T J approximatey 90 C 2

3 I, rain-to-source Current () V VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V I, rain-to-source Current () 00 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 00 0 T J = 50 C T J = 25 C V S = 0V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) I = 7.3 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C iss C oss = C ds Cgd C oss Crss V S, rain-to-source Votage (V) V, Gate-to-Source Votage (V) GS I = 7.3 V S = 24V V S = 5V FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 00 T J = 25 C T J = 50 C 0 V GS = 0V V S, Source-to-rain Votage (V) I, rain Current () OPERTION IN THIS RE LIMITE BY R S(on) 00us ms TC = 25 C 0ms TJ = 50 C Singe Puse V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea 4

5 Q G V S R 0V Q GS Q G R G V GS.U.T. - V V G 0V Charge Puse Width µs uty Factor 0. % Fig 9a. Basic Gate Charge Waveform Current Reguator Same Type as.u.t. Fig 0a. Switching Time Test Circuit V S 2V.2µF 50KΩ.3µF 90%.U.T. V - S V GS 0% V GS t d(on) t r t d(off) t f 3m I G I Current Samping Resistors Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 Therma Response (Z thj ) 0 = SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectanguar Puse uration (sec) PM t Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient 5

6 5V V S L RIVER R G.U.T I S - V 20V tp 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)SS tp E S, Singe Puse vaanche Energy (mj) TOP BOTTOM I Starting T, Junction Temperature ( o J C) Fig 2c. Maximum vaanche Energy Vs. rain Current I S Fig 2b. Uncamped Inductive Waveforms 6

7 Peak iode Recovery dv/dt Test Circuit.U.T - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 3. For N-Channe HEXFETS 7

8 SO-8 Package Outine imensions are shown in miimeters (inches) ' % ',0,&(6 0, 0; 0,//,0(7(56 0, 0; ( >@ E F ' ( H %6,& %6,& H %6,& %6,& ; H. / \ H.[ & \ ;E >@ ;/ ;F >@ & % 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,20,//,0(7(5 ',0(6,265(62:,0,//,0(7(56>,&(6@ 287/,(&2) ('(&287/,(06 ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67(/(*72)/(')2562/'(5,*72 68%6757( >@ )22735,7 ;>@ SO-8 Part Marking (;03/(7,6,6,5)026)(7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; ;>@ ;>@ '7(&2'(<:: 3 '(6,*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 Note: For the most current drawing pease refer to IR website at 8

9 SO-8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Note: For the most current drawing pease refer to IR website at ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (30) TC Fax: (30) Visit us at for saes contact information. 02/