IRF7301 PD C. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.050Ω SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings

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1 HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 8 S l ual N-Channel Mosfet 2 7 l Surface Mount G l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching Top View escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. P C IRF730 V SS = 20V R S(on) = 0.050Ω SO-8 bsolute Maximum Ratings Parameter Max. Units T = 25 C Sec. Pulsed rain Current, V 4.5V 5.7 T = 25 C Continuous rain Current, V 4.5V 5.2 T = 70 C Continuous rain Current, V 4.5V 4. I M Pulsed rain Current 2 = 25 C Power issipation 2.0 W Linear erating Factor 0.06 W/ C V GS Gate-to-Source Voltage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Thermal Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 62.5 C/W 8/25/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R S(ON) Static rain-to-source On-Resistance V GS = 4.5V, I = 2.6 ƒ Ω V GS = 2.7V, I = 2.2 ƒ V GS(th) Gate Threshold Voltage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 8.3 S V S = 5V, I = 2.6 I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C Gate-to-Source Forward Leakage 0 V GS = 2V I GSS n Gate-to-Source Reverse Leakage -0 V GS = - 2V Q g Total Gate Charge 20 I = 2.6 Q gs Gate-to-Source Charge 2.2 nc V S = 6V Q gd Gate-to-rain ("Miller") Charge 8.0 V GS = 4.5V, See Fig. 6 and 2 ƒ t d(on) Turn-On elay Time 9.0 V = V t r Rise Time 42 I = 2.6 ns t d(off) Turn-Off elay Time 32 R G = 6.0Ω t f Fall Time 5 R = 3.8Ω, See Fig. ƒ L Internal rain Inductance 4.0 L S Internal Source Inductance 6.0 Between lead tip and center of die contact C iss Input Capacitance 660 V GS = 0V C oss Output Capacitance 280 pf V S = 5V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz, See Fig. 5 nh G S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.5 (Body iode) showing the I SM Pulsed Source Current integral reverse G 2 (Body iode) p-n junction diode. S V S iode Forward Voltage.0 V T J = 25 C, I S =.8, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.6 Q rr Reverse RecoveryCharge nc di/dt = 0/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) ƒ Pulse width 300µs; duty cycle 2%. I S 2.6, di/dt 0/µs, V V (BR)SS, T J 50 C Surface mounted on FR-4 board, t sec.

3 I, rain-to-source Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V I, rain-to-source Current () 20µs PULSE WITH 20µs PULSE WITH.5V T J = 25 C T J = 50 C V S, rain-to-source Voltage (V) V S, rain-to-source Voltage (V) 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 0 T J = 25 C T J = 50 C V S = 5V 20µs PULSE W ITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) I = 4.3 V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

4 C, Capacitance (pf) V GS = 0V, f = M Hz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss C oss C rss V, G ate-to-source V oltage (V ) GS I = 2.6 V S = 6V 0 0 V S, rain-to-source Voltage (V) FOR TEST CIRCUIT 0 SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 0 T J = 50 C T J = 25 C T = 25 C ms TJ = 50 C V = 0V Single Pulse 0. GS V S, Source-to-rain Voltage (V) V S, rain-to-source Voltage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) 0us ms Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea

5 V S R R G V GS.U.T. - V I, rain Current () Fig a. Switching Time Test Circuit V S 90% 4.5V Pulse Width µs uty Factor 0. % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. mbient Temperature Fig b. Switching Time Waveforms 0 Thermal Response (Z thj ) = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t Peak T J = P M x Z thj T t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient

6 Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 4.5V Q GS Q G.U.T. V - S V GS V G 3m Charge Fig 2a. Basic Gate Charge Waveform I G I Current Sampling Resistors Fig 2b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - ** V GS * R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. - evice Under Test - * V * Reverse Polarity for P-Channel ** Use P-Channel river for P-Channel Measurements river Gate rive Period P.W. = P.W. Period [ V GS =V] ***.U.T. I S Waveform Reverse Recovery Current Re-pplied Voltage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Level and 3V rive evices Fig 3. For N-Channel HEXFETS

8 Package Outline SO8 Outline 5 E B H 0.25 (.0) M M e 6X e K x 45 θ - C - 0. (.004) L 6 B 8X 8X 0.25 (.0) M C S B S NOTES:. IMENSIONING N TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3. IMENSIONS RE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. C 8X INCHES MILLIMETERS IM MIN MX MIN MX B C E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L θ RECOMMENE FOOTPRINT 6.46 (.255 ).27 (.050 ) 3X 0.72 (.028 ) 8X.78 (.070) 8X Part Marking Information SO8 EXMPLE : THIS IS N IRF7 INTERNTIONL RECTIFIER LOGO F7 TOP 32 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK PRT NUMBER W FER LOT COE (LST 4 IGITS) XXXX BOTTOM

9 Tape & Reel Information SO8 imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTIO N NOTES:. CO NTR O LL IN G IM EN S IO N : M ILL IM E TE R. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Building, Singapore 036 Tel: ata and specifications subject to change without notice. 8/97