HEXFET Power MOSFET V DSS = 40V. R DS(on) = 4.0mΩ I D = 160A
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1 Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Seventh Generation HEXFET power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G HEXFET Power MOSFET D S PD V DSS = 40V R DS(on) = 4.0mΩ I D = 160A The TO-220 package is universay preferred for a commercia-industria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V 160 I T C = C Continuous Drain Current, V 10V 110 A I DM Pused Drain Current 640 P C = 25 C Power Dissipation 200 W Linear Derating Factor 1.3 W/ C V GS Gate-to-Source Votage ± 20 V E AS Singe Puse Avaanche Energy 620 mj I AR Avaanche Current 95 A E AR Repetitive Avaanche Energy 20 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range C Sodering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 srew 10 bf in (1.1N m) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.75 R θcs Case-to-Sink, Fat, Greased Surface 0.50 C/W R θja Junction-to-Ambient (PCB Mounted) /20/04
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 40 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA R 4.0 V GS = 10V, I D = 95A DS(on) Static Drain-to-Source On-Resistance mω 5.9 V GS = 4.3V, I D = 40A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 93 S V DS = 25V, I D = 95A I DSS Drain-to-Source Leakage Current 20 V µa DS = 40V, V GS = 0V 250 V DS = 32V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 200 V GS = 20V na Gate-to-Source Reverse Leakage -200 V GS = -20V Q g Tota Gate Charge 140 I D = 95A Q gs Gate-to-Source Charge 48 nc V DS = 32V Q gd Gate-to-Drain ("Mier") Charge 60 V GS = 5.0V, See Fig. 6 t d(on) Turn-On Deay Time 18 V DD = 20V ns t r Rise Time 270 I D = 95A t d(off) Turn-Off Deay Time 38 R G = 2.5Ω V GS = 4.5V t f Fa Time 37 R D = 0.25Ω Between ead, D L D Interna Drain Inductance 4.5 nh 6mm (0.25in.) L S Interna Source Inductance 7.5 from package G and center of die contact S C iss Input Capacitance 6590 V GS = 0V C oss Output Capacitance 1710 pf V DS = 25V C rss Reverse Transfer Capacitance 350 ƒ = 1.0MHz, See Fig. 5 C oss Output Capacitance 6650 V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 1510 V GS = 0V, V DS = 32V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 1480 V GS = 0V, V DS = 0V to 32V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 160 (Body Diode) showing the A G I SM Pused Source Current integra reverse 640 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.3 V T J = 25 C, I S = 95A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 95A Q rr Reverse RecoveryCharge nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11). Starting T J = 25 C, L = 0.35mH R G = 25Ω, I AS = 95A. (See Figure 12). ƒ I SD 95A, di/dt 160A/µs, V DD V (BR)DSS, T J 175 C. Puse width 300µs; duty cyce 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss whie V DS is rising from 0 to 80% V DSS. Cacuated continuous current based on maximum aowabe junction temperature; for recommended current-handing of the package refer to Design Tip # Cacuated continuous current based on maximum aowabe junction temperature. Package imitation current is 75A. 2
3 I D, Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V 4.3V I D, Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.3V 4.3V 20µs PULSE WIDTH 10 T J = 25 C V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH 10 T J = 175 C V DS, Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) T J = 25 C T J = 175 C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.5 I D = 160A V GS = 10V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs Cgd, C ds SHORTED Crss = Cgd Coss = Cds Cgd C iss C oss FOR TEST CIRCUIT C rss SEE FIGURE V DS, Drain-to-Source Votage (V) Q G, Tota Gate Charge (nc) V GS, Gate-to-Source Votage (V) I = D 95A V DS = 32V V DS = 20V Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) 10 T J = 175 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) 0 I D, Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10us us 1ms TC = 25 C TJ = 175 C Singe Puse 10 10ms 1 10 V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4
5 160 LIMITED BY PACKAGE V DS R D 120 R G V GS D.U.T. - V DD I D, Drain Current (A) V Puse Width 1 µs Duty Factor 0.1 % V DS 90% T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f 1 Therma Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J= P DM x Z thjc TC t 1, Rectanguar Puse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
6 15V V DS L DRIVER R G D.U.T I AS - V DD A 20V tp 0.01Ω Fig 12a. Uncamped Inductive Test Circuit V (BR)DSS tp I AS Fig 12b. Uncamped Inductive Waveforms E AS, Singe Puse Avaanche Energy (mj) I D TOP 49A 101A BOTTOM 121A Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avaanche Energy Vs. Drain Current 10 V Q G Current Reguator Same Type as D.U.T. 50KΩ V G Q GS Q GD 12V V GS.2µF.3µF D.U.T. V - DS 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 13b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - V GS R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD * Reverse Poarity of D.U.T for P-Channe Driver Gate Drive Period P.W. D = P.W. Period [ V GS =10V ] *** D.U.T. I SD Waveform Reverse Recovery Current Re-Appied Votage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** V GS = 5.0V for Logic Leve and 3V Drive Devices Fig 14. For N-channe HEXFET power MOSFETs 7
8 TO-220AB Package Outine Dimensions are shown in miimeters (inches) 2.87 (.113) 2.62 (.103) (.415) (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.555) (.530) (.255) 6.10 (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assemby ine position indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C Data and specifications subject to change without notice. This product has been designed and quaified for the Automotive [Q101] market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (310) TAC Fax: (310) Visit us at for saes contact information.07/04 8
9 Note: For the most current drawings pease refer to the IR website at:
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Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
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SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationLinear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Surface Mount (IRFBC20S) Low-profie through-hoe (IRFBC20L) Avaiabe in Tape & Ree (IRFBC20S) Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fuy Avaanche Rated PRELIMINARY G PD - 9.1014
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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IRFH792PbF Appications High Frequency Point-of-Load Synchronous Buck Converter for Appications in Neworking & Computing Systems Optimized for Contro FET Appications HEXFET Power MOSFET V DSS R DS(on) max
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dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
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查询 IRF640NLPBF 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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