D 2 Pak TO
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1 Logic-Leve Gate Drive dvanced Process Technoogy Surface Mount (IRLZ34NS) Low-profie through-hoe (IRLZ34NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description PD IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET V DSS = 55V R DS(on) = 0.035Ω I D = 30 Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The D 2 Pak is a surface mount power package capabe of accommodating die sizes up to HEX-4. It provides the highest power capabiity and the owest possibe onresistance in any existing surface mount package. The D 2 Pak is suitabe for high current appications because of its ow interna connection resistance and can dissipate up to 2.0W in a typica surface mount appication. The through-hoe version (IRLZ34NL) is avaiabe for owprofie appications. D 2 Pak TO-262 bsoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 30 I T C = 0 C Continuous Drain Current, V V 2 I DM Pused Drain Current P = 25 C Power Dissipation 3.8 W P C = 25 C Power Dissipation 68 W Linear Derating Factor 0.45 W/ C V GS Gate-to-Source Votage ±6 V E S Singe Puse vaanche Energy mj I R vaanche Current 6 E R Repetitive vaanche Energy 6.8 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Sodering Temperature, for seconds 300 (.6mm from case ) C Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 2.2 R θj Junction-to-mbient ( PCB Mounted,steady-state)** 40 C/W 07/20/04 G D S
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 55 V V GS = 0V, I D = 250µ V (BR)DSS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = m V GS = V, I D = 6 R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 5.0V, I D = V GS = 4.0V, I D = 4 V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µ g fs Forward Transconductance S V DS = 25V, I D = 6 I DSS Drain-to-Source Leakage Current 25 V DS = 55V, V GS = 0V µ 250 V DS = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 6V n Gate-to-Source Reverse Leakage -0 V GS = -6V Q g Tota Gate Charge 25 I D = 6 Q gs Gate-to-Source Charge 5.2 nc V DS = 44V Q gd Gate-to-Drain ("Mier") Charge 4 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On Deay Time 8.9 V DD = 28V t r Rise Time 0 I D = 6 ns t d(off) Turn-Off Deay Time 2 R G = 6.5Ω, V GS = 5.0V t f Fa Time 29 R D =.8Ω, See Fig. L S Interna Source Inductance 7.5 nh Between ead, and center of die contact C iss Input Capacitance 880 V GS = 0V C oss Output Capacitance 220 pf V DS = 25V C rss Reverse Transfer Capacitance 94 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 30 (Body Diode) showing the G I SM Pused Source Current integra reverse (Body Diode) p-n junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 6, V GS = 0V t rr Reverse Recovery Time 76 ns T J = 25 C, I F = 6 Q rr Reverse Recovery Charge nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) V DD = 25V, starting T J = 25 C, L =6µH R G = 25Ω, I S = 6. (See Figure 2) ƒ I SD 6, di/dt 270/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%. Uses IRLZ34N data and test conditions ** When mounted on " square PCB ( FR-4 or G- Materia ). For recommended footprint and sodering techniques refer to appication note #N
3 I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH 0. T J = 25 C 0. 0 V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH 0. T J = 75 C 0. 0 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current () 00 0 T = 25 C J T = 75 C J V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) I D = 27 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) 400 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED 200 C rss = Cgd C iss C oss = C ds Cgd C oss Crss V DS, Drain-to-Source Votage (V) V GS, Gate-to-Source Votage (V) I D = 6 V DS = 44V V DS = 28V FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V SD, Source-to-Drain Votage (V) I D, Drain Current () 00 OPERTION IN THIS RE LIMITED BY RDS(on) 0 µs 0µs ms T C = 25 C T J = 75 C ms Singe Puse 0 V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating rea 4
5 40 V DS R D I D, Drain Current () Fig a. Switching Time Test Circuit V DS 90% R G V GS 5.0V Puse Width µs Duty Factor 0. % D.U.T. -VDD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t Peak T J= P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
6 L V DS D.U.T. R G V - DD 5.0 V I S t p 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)DSS t p V DD V DS E S, Singe Puse vaanche Energy (mj) I D TOP 6.6 BOTTOM 6 V DD = 25V Starting T J, Junction Temperature ( C) Fig 2c. Maximum vaanche Energy Vs. Drain Current I S Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q GD D.U.T. V - DS V GS V G 3m Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-ppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For N-Channe HEXFETS 7
8 D 2 Pak Package Outine Dimensions are shown in miimeters (inches) D 2 Pak Part Marking Information T HIS IS N IRF 530S WIT H L OT CODE 8024 SSEMBLED ON WW 02, 2000 IN THE SSEMBLY LINE "L" Note: "P" in as semby ine pos ition indicates "L ead-f ree" OR INTERNT IONL RECTIFIER LOGO SSEMBLY LOT CODE F530S PRT NUMBER DT E CODE YER 0 = 2000 WEEK 02 LINE L INT E RNT IONL RE CT IF IE R LOGO S S E MB LY LOT CODE F530S PRT NUMBER DTE CODE P = DESIGNTES LED-FREE PRODUCT (OPTIONL) YER 0 = 2000 WEEK 02 = SSEMBLY SITE CODE 8
9 TO-262 Package Outine Dimensions are shown in miimeters (inches) TO-262 Part Marking Information EXMPLE: THIS IS N IRL33L LOT CODE 789 S SEMBLED ON WW 9, 997 IN THE SSEMBLY LINE "C" Note: "P" in assemby ine position indicates "Lead-Free" OR INTERNTIONL RECTIFIER LOGO S S E MB L Y LOT CODE PRT NUMBER DT E CODE YE R 7 = 997 WEEK 9 LINE C INTERNTIONL RECTIFIER LOGO S S EMBLY LOT CODE PRT NUMBER DTE CODE P = DESIGNTES LED-FREE PRODUCT (OPTIONL) YER 7 = 997 WEEK 9 = SSEMBLY SITE CODE 9
10 D 2 Pak Tape & Ree Information Dimensions are shown in miimeters (inches) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION TRL.85 (.073).65 (.065).90 (.429).70 (.42).60 (.457).40 (.449) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) (.957) (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MX (2.362) MIN. NOTES :. COMFORMS TO EI CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLNGE OUTER EDGE (.039) (.96) (.97) MX. 4 Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information. 07/04
11 Note: For the most current drawings pease refer to the IR website at:
IRLR024NPbF IRLU024NPbF
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l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationIRLL014N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.14Ω I D = 2.0A SOT-223
Surface Mount dvanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationIRL540NS/L. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.044Ω I D = 36A. Absolute Maximum Ratings. Thermal Resistance PD
l dvanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from
More informationThermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient 100 C/W
P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
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dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF 8 7 6 4 5 HEXFET Power MOSFET P 9624 V SS =
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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P 9604 IRF7304QPbF dvanced Process Technoogy Utra Low OnResistance ua P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S G S2 G2 8 2 3 4 5 HEXFET Power MOSFET 7 V
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationIRFR3504ZPbF IRFU3504ZPbF
Features Advanced Process Technoogy Utra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utiizes the atest
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRF9520N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.48Ω I D = -6.8A
Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
More informationIRLZ44N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 47A
Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced
More informationIRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A
PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
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SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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HEXFET Power MOSFET Dynamic dv/dt Rating Current Sense 175 C Operating Temperature Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation HEXFETs from Internationa Rectifier
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
More informationIRFR/U5505. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.11Ω I D = -18A
Utra Low OnResistance PChanne Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
More informationIRFL110 V DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A SOT-223
PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationFB180SA10. HEXFET Power MOSFET V DSS = 100V. R DS(on) = W I D = 180A
PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D
More informationV DSS R DS(on) max Qg 30V GS = 10V 9.3nC
IRFH792PbF Appications High Frequency Point-of-Load Synchronous Buck Converter for Appications in Neworking & Computing Systems Optimized for Contro FET Appications HEXFET Power MOSFET V DSS R DS(on) max
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