Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
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1 dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature PChanne Fast Switching Fuy vaanche Rated LeadFree Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G PD HEXFET Power MOSFET D S V DSS = V R DS(on) = 0.7Ω I D = 23 The TO247 package is preferred for commerciaindustria appications where higher power eves precude the use of TO220 devices. The TO247 is simiar but superior to the earier TO28 package TO247C because of its isoated mounting hoe. bsoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 23 I T C = C Continuous Drain Current, V V 6 I DM Pused Drain Current 76 P C = 25 C Power Dissipation 40 W Linear Derating Factor 0.9 W/ C V GS GatetoSource Votage ± 20 V E S Singe Puse vaanche Energy 430 mj I R vaanche Current E R Repetitive vaanche Energy 4 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 screw bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase. R θcs CasetoSink, Fat, Greased Surface 0.24 C/W R θj Junctiontombient 40 7/30/04
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I D = m R DS(on) Static DraintoSource OnResistance 0.7 Ω V GS = V, I D = 3 V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µ g fs Forward Transconductance 5.3 S V DS = 50V, I D = I DSS DraintoSource Leakage Current 25 V µ DS = V, V GS = 0V 250 V DS = 80V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage V GS = 20V n GatetoSource Reverse Leakage V GS = 20V Q g Tota Gate Charge 97 I D = Q gs GatetoSource Charge 5 nc V DS = 80V Q gd GatetoDrain ("Mier") Charge 5 V GS = V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 5 V DD = 50V t r Rise Time 67 I D = ns t d(off) TurnOff Deay Time 5 R G = 5.Ω t f Fa Time 5 R D = 4.2Ω, See Fig. Between ead, D L D Interna Drain Inductance 5.0 6mm (0.25in.) nh from package G L S Interna Source Inductance 3 and center of die contact S C iss Input Capacitance 300 V GS = 0V C oss Output Capacitance 400 pf V DS = 25V C rss Reverse Transfer Capacitance 240 ƒ =.0MHz, See Fig. 5 SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 23 (Body Diode) showing the I SM Pused Source Current integra reverse G 76 (Body Diode) pn junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 3, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = Q rr Reverse RecoveryCharge µc di/dt = /µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 7.mH R G = 25Ω, I S =. (See Figure 2) ƒ I SD, di/dt 470/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%. Uses IRF9540N data and test conditions
3 I D, DraintoSource Current () VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T c = 25 C 0. V DS, DraintoSource Votage (V) I D, DraintoSource Current () VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T C = 75 C 0. V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, DraintoSource Current () T = 25 C J V DS = 25V 20µs PULSE WIDTH V, GatetoSource Votage (V) GS T = 75 C J R DS(on), DraintoSource On Resistance (Normaized) I = 9 D V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature
4 C, Capacitance (pf) 3000 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = Cgd 2500 C oss = C ds Cgd 2000 C iss 500 C oss 0 Crss V DS, DraintoSource Votage (V) V GS, GatetoSource Votage (V) I = D V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current () T = 75 C J T = 25 C J I D, Drain Current () 0 OPERTION IN THIS RE LIMITED BY RDS(on) µs ms V GS = 0V V SD, SourcetoDrain Votage (V) T C = 25 C T ms J = 75 C Singe Puse 0 V, DraintoSource Votage (V) DS Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating rea
5 25 V DS R D I D, Drain Current () T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature R G V GS V Puse Width µs Duty Factor 0. % D.U.T. Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % 90% V DS Fig b. Switching Time Waveforms V DD Therma Response (Z thjc ) 0. D = SINGLE PULSE t2 0.0 (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase
6 Fig 2a. Uncamped Inductive Test Circuit I S V DS L R G D.U.T V DD IS 20V DRIVER tp 0.0Ω 5V E S, Singe Puse vaanche Energy (mj) ID TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 2c. Maximum vaanche Energy Vs. Drain Current tp V (BR)DSS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. V Q G 2V.2µF 50KΩ.3µF Q GS Q GD D.U.T. V DS V G V GS 3m Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer V GS R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD * Reverse Poarity of D.U.T for PChanne Driver Gate Drive Period P.W. D = P.W. Period [ ] *** V GS =V D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt [ ] V DD Reppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% [ ] I SD *** V GS = 5.0V for Logic Leve and 3V Drive Devices Fig 4. For PChanne HEXFETS
8 TO247C Package Outine Dimensions are shown in miimeters (inches) TO247C Part Marking Information EXMPLE: THIS IS N IRFPE30 WITH S SEMBLY LOT CODE 5657 SSEMBLED ON WW 35, 2000 IN THE SSEMBLY LINE "H" Note: "P" in assemby ine position indicates "LeadFree" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFPE30 035H PRT NUMBER DTE CODE YER 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information. 07/04
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie ( mm) vaiabe in Tape and Ree Fast Switching S escription Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationD 2 Pak TO
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationIRF1704 Benefits AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
More informationIRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A
HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOSFET P - 9576 IRF730PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching Lead-Free escription Fifth
More informationSMPS MOSFET. V DSS Rds(on) max I D
pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9878C IRF830 HEXFET Power MOSFET V DSS Rds(on) max I D 500V.40Ω 5.0 Benefits l
More informationIRFR3504ZPbF IRFU3504ZPbF
Features Advanced Process Technoogy Utra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utiizes the atest
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationIRF3315 APPROVED. HEXFET Power MOSFET V DSS = 150V. R DS(on) = 0.07Ω I D = 27A
l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationIRLZ44N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 47A
Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Surface Mount (IRFBC20S) Low-profie through-hoe (IRFBC20L) Avaiabe in Tape & Ree (IRFBC20S) Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fuy Avaanche Rated PRELIMINARY G PD - 9.1014
More informationG 1. Micro3. 1
P 9665 IRLML503GPbF HEXFET Power MOSFET Generation V Technoogy Utra Low OnResistance PChanne MOSFET SOT23 Footprint Low Profie (
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationIRF530N PD HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.11Ω I D = 15A PRELIMINARY
HEXFET Power MOSFET dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD - 9.35 IRF530N V DSS = 00V R DS(on) = 0.Ω Description Fifth
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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