Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units

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1 l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 PD IRF7101PbF HEXFET Power MOSFET D1 D1 D2 D2 V DSS = 20V R DS(on) = 0.10Ω I Top View D = 3.5 SO-8 bsolute Maximum Ratings Parameter Max. Units I T = 25 C Continuous Drain Current, V 10V 3.5 I T = 100 C Continuous Drain Current, V 10V 2.3 I DM Pulsed Drain Current 14 P C = 25 C Power Dissipation 2.0 W Linear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt 3.0 V/nS T J, T STG Junction and Storage Temperature Range -55 to 150 Sodering Temperature, for 10 seconds 300(1.6mm from case) C Thermal Resistance Ratings Parameter Min. Typ. Max Units R θj Maximum Junction-to-mbient 62.5 C/W 10/6/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 20 V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1m R DS(ON) Static Drain-to-Source On-Resistance 0.10 V GS = 10V, I D = 1.8 ƒ Ω 0.15 V GS = 4.5V, I D = 1.0 ƒ V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ g fs Forward Transconductance 1.1 S V DS = 15V, I D = 3.5 ƒ I DSS Drain-to-Source Leakage Current 2.0 V DS = 20V, V GS = 0V µ 250 V DS = 16V, V GS = 0V, T J = 125 C Gate-to-Source Forward Leakage 100 V GS = 12V I GSS n Gate-to-Source Reverse Leakage -100 V GS = - 12V Q g Total Gate Charge 15 I D = 1.8 Q gs Gate-to-Source Charge 2.0 nc V DS = 16V Q gd Gate-to-Drain ("Miller") Charge 3.6 V GS = 10V t d(on) Turn-On Delay Time 7.0 V DD = 10V t r Rise Time 10 I D = 1.8 ns t d(off) Turn-Off Delay Time 24 R G = 8.2Ω t f Fall Time 30 R D = 26Ω L D Internal Drain Inductance 4.0 Between lead,6mm(0.25in.) nh G from package and center L S Internal Source Inductance 6.0 of die contact C iss Input Capacitance 320 V GS = 0V C oss Output Capacitance 250 pf V DS = 15V C rss Reverse Transfer Capacitance 75 ƒ = 1.0MHz D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 2.0 (Body Diode) showing the I SM Pulsed Source Current integral reverse G 14 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.2 V T J = 25 C, I S = 1.7, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 1.7 Q rr Reverse RecoveryCharge nc di/dt = 100/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width 300µs; duty cycle 2%. I SD 3.5, di/dt 90/µs, V DD V (BR)DSS, T J 150 C Surface mounted on FR-4 board, t 10sec.

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5 100 Thermal Response (Z thj ) 10 1 D = Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J= P DM x Z thj T SINGLE PULSE (THERML RESPONSE) t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-mbient

6 R G V GS V DS R D D.U.T. V DS 90% - V DD 10V Pulse Width 1 µs Duty Factor 0.1 % 10% V GS t d(on) t r t d(off) t f Fig 11a. Switching Time Test Circuit Fig 11b. Switching Time Waveforms Current Regulator Same Type as D.U.T. 12V.2µF 50KΩ.3µF D.U.T. V - DS 10V Q GS Q G Q GD V GS V G 3m I G I D Current Sampling Resistors Fig 12a. Gate Charge Test Circuit Charge Fig 12b. Basic Gate Charge Waveform

7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS

8 SO-8 Package Outline Dimensions are shown in milimeters (inches) E 6 6X D e B H 0.25 [.010] INCHES DIM MIN MX b MILLIMETERS MIN MX c D E e.050 BSIC 1.27 BSIC e1.025 BSIC BSIC H K L y e1 C y K x 45 8X b [.010] C B 0.10 [.004] 8X L 7 8X c NOT ES : 1. DIMENSIONING & TOLERNCING PER SME Y14.5M CONTROLLING DIMENS ION: MILLIMETER 3. DIMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LED FOR SOLDERING TO S UBS TRTE [.255] 3X 1.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXMPLE: THIS IS N IRF7101 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7101 DTE CODE (YWW) P = DES IGNTES LED-FREE PRODUCT (OPTIONL) Y = LST DIGIT OF T HE YER WW = WEE K = S S EMB LY S ITE CODE LOT CODE PRT NUMBER

9 SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-481 & EI (12.992) MX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-481 & EI (.566 ) (.488 ) Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (310) TC Fax: (310) Visit us at for sales contact information.10/04