HEXFET Power MOSFET V DSS = 100V. R DS(on) = 23mΩ I D = 57A
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1 Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G HEXFET Power MOSFET D S IRF37SPbF IRF37LPbF S = 0V R DS(on) = 23mΩ I D = 57A The D 2 Pak is a surface mount power package capabe of accommodating die sizes up to HEX-4. It provides the highest power capabiity and the owest possibe on-resistance in any existing surface mount package. The D 2 Pak is suitabe for high current appications because of its ow interna connection resistance and can dissipate up to 2.0W in a typica surface mount appication. The through-hoe version (IRF37L) is avaiabe for ow-profie appications. D 2 Pak IRF37SPbF TO-262 IRF37LPbF Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain V 57 I T C = 0 C Continuous Drain V 40 A I DM Pused Drain Current 180 P C = 25 C Power Dissipation 200 W Linear Derating Factor 1.3 W/ C Gate-to-Source Votage ± 20 V I AR Avaanche Current 28 A E AR Repetitive Avaanche Energy 20 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.8 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range Sodering Temperature, for seconds 300 (1.6mm from case ) C Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.75 C/W R θja Junction-to-Ambient (PCB Mounted,steady-state)** 40 1
2 IRF37S/LPbF Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 0 V = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.13 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 23 mω = V, I D =28A (th) Gate Threshod Votage V =, I D = 250µA g fs Forward Transconductance 32 S = 25V, I D = 28A I DSS Drain-to-Source Leakage Current 25 V µa DS = 0V, = 0V 250 = 80V, = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 0 = 20V na Gate-to-Source Reverse Leakage -0 = -20V Q g Tota Gate Charge 130 I D = 28A Q gs Gate-to-Source Charge 26 nc = 80V Q gd Gate-to-Drain ("Mier") Charge 43 = V, See Fig. 6 and 13 t d(on) Turn-On Deay Time 12 V DD = 50V t r Rise Time 58 I D = 28A ns t d(off) Turn-Off Deay Time 45 R G = 2.5Ω t f Fa Time 47 = V, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 3130 = 0V C oss Output Capacitance 4 = 25V C rss Reverse Transfer Capacitance 72 pf ƒ = 1.0MHz, See Fig. 5 E AS Singe Puse Avaanche Energy mj I AS = 28A, L = 0.70mH Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 57 (Body Diode) showing the A G I SM Pused Source Current integra reverse 230 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.2 V T J = 25 C, I S = 28A, = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 28A Q rr Reverse Recovery Charge 670 nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) D S Notes: Repetitive rating; puse width imited by max. junction temperature. (See fig. 11). Starting T J = 25 C, L = 0.70mH, R G = 25Ω, I AS = 28A, =V. (See Figure 12). ƒ 28A, di/dt 380A/µs, V DD V (BR)DSS, T J 175 C. Puse width 400µs; duty cyce 2%. This is a typica vaue at device destruction and represents operation outside rated imits. This is a cacuated vaue imited to T J = 175 C. Uses IRF37 data and test conditions. **When mounted on 1" square PCB (FR-4 or G- Materia). For recommended footprint and sodering techniques refer to appication note #AN
3 I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF37S/LPbF 00 0 VGS TOP 16V V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V 00 0 VGS TOP 16V V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V 3.5V 3.5V µs PULSE WIDTH Tj = 25 C , Drain-to-Source Votage (V) µs PULSE WIDTH Tj = 175 C , Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics I D = 57A T J = 175 C.00 T J = 25 C 1.00 = 50V 15V 20µs PULSE WIDTH , Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) IRF37S/LPbF = 0V, f = 1 MHZ C iss = C gs C gd, C ds C rss = C gd C oss = C ds C gd Ciss Coss Crss SHORTED, Gate-to-Source Votage (V) I D = 28A = 80V = 50V = 20V 1 0, Drain-to-Source Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage OPERATION IN THIS AREA LIMITED BY R DS (on) 0.00 T J = 175 C 0 0µsec msec 1.00 T J = 25 C = 0V V SD, Source-toDrain Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage 0.1 Tc = 25 C msec Tj = 175 C Singe Puse DC , Drain-to-Source Votage (V) Fig 8. Maximum Safe Operating Area 4
5 IRF37S/LPbF 60 R D I D, Drain Current (A) T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% R G Puse Width 1 µs Duty Factor 0.1 % D.U.T. Fig a. Switching Time Test Circuit % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms - V DD 1 Therma Response (Z thjc ) 0.1 D = SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C t 1, Rectanguar Puse Duration (sec) Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
6 IRF37S/LPbF R G 20V tp Fig 12a. Uncamped Inductive Test Circuit tp L D.U.T IAS 0.01Ω 15V DRIVER V (BR)DSS - V DD A E AS, Singe Puse Avaanche Energy (mj) TOP BOTTOM Starting T, Junction Temperature ( J C) I D 11A 20A 28A Fig 12c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 12b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF Q GS Q GD D.U.T. V - DS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 13b. Gate Charge Test Circuit 6
7 IRF37S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD * Reverse Poarity of D.U.T for P-Channe Driver Gate Drive Period P.W. D = P.W. Period [ =V ] *** D.U.T. I SD Waveform Reverse Recovery Current Re-Appied Votage Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 14. For N-channe HEXFET power MOSFETs 7
8 IRF37S/LPbF D 2 Pak (TO-263AB) Package Outine Dimensions are shown in miimeters (inches) D 2 Pak (TO-263AB) Part Marking Information 7,6,6$1,5)6:,7 /27&2'(,17(51$7,21$/ $66(0%/('21:: 5(&7,),(5,17($66(0%/</,1(/ /2*2 $66(0%/< /27&2'( )6 3$57180%(5 '$7(&2'( <($5 :((. /,1(/ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( )6 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing pease refer to IR website at 8
9 IRF37S/LPbF TO-262 Package Outine Dimensions are shown in miimeters (inches) TO-262 Part Marking Information (;$03/( 7,6,6$1,5// /27&2'( $66(0%/('21::,17($66(0%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing pease refer to IR website at 9
10 IRF37S/LPbF D 2 Pak Tape & Ree Information Dimensions are shown in miimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) (.457) (.449) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX. 4 Note: For the most current drawing pease refer to IR website at IR WORLD HEADQUARTERS: 1 N. Sepuveda Bvd., E Segundo, Caifornia 90245, USA To contact Internationa Rectifier, pease visit
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationIRFL110 V DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A SOT-223
PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationV DSS = 55V. R DS(on) = 0.040Ω I D = 28A
PD- 937C IRLR/U2705 HEXFET Power MOSFET Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Logic-Leve Gate Drive dvanced Process Technoogy Surface Mount (IRL3303S) Low-profie through-hoe (IRL3303L) 75 C Operating Temperature Fast Switching Fuy vaanche Rated Description PD - 9.323B IRL3303S/L
More informationParameter Typ. Max. Units R qja Junction-to-Amb. (PCB Mount, steady state)* R qja Junction-to-Amb. (PCB Mount, steady state)** 48 60
PD - 91368B IRFL4310 HEXFET Power MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paraeing Advanced Process Technoogy Utra Low On-Resistance Description Fifth Generation HEXFETs from Internationa
More informationLinear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationV DSS R DS(on) max I D
PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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