Thermal Resistance Parameter Min. Max. Units

Transcription

1 HEXFET Power MOSFET Dynamic dv/dt Rating Current Sense 175 C Operating Temperature Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation HEXFETs from Internationa Rectifier provide the designer with the best combination of fast switching, ruggedized device, ow on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain current through the additiona two eads to be used for contro or protection of the device. These devices exhibit simiar eectrica and therma characteristics as their IRF-series equivaent part numbers. The provision of a kevin source connection effectivey eiminates probems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing appications. PD A IRCZ24 S = 55V R DS(on) = 0.040Ω = 26A TO-220 HexSense Absoute Maximum Ratings Parameter Max. T C = 25 C Continuous Drain Current, V 10V T C = 100 C Continuous Drain Current, V 10V 12 A M Pused Drain Current 68 P C = 25 C Power Dissipation 60 W Linear Derating Factor 0.40 W/ C V GS Gate-to-Source Votage ±20 V E AS Singe Puse Avaanche Energy 6.0 mj dv/dt Peak Diode Recovery dv/dt ƒ 4.5 A T J Operating Junction and -55 to T STG Storage Temperature Range Sodering Temperature, for 10 seconds 300 (1.6mm from case) C Mounting Torque, 6-32 or screw 10 bf in (1.1 N m) Therma Resistance Parameter Min. Max. Units R θjc Junction-to-Case 2.5 R θcs Case-to-Sink, Fat, Greased Surface 0.50 R θja Junction-to-Ambient 62 ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and sodering techniques refer to appication note #AN-994. C/W C-1

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 60 V V GS = 0V, = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, = 1mA R DS(ON) Static Drain-to-Source On-Resistance 0.10 Ω V GS = 10V, = 10A V GS(th) Gate Threshod Votage V = V GS, = 250µA g fs Forward Transconductance 5.8 S = 25V, = 10A SS Drain-to-Source Leakage Current 25 = 60V, V GS = 0V 250 = 48V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 100 V GS = 20V Gate-to-Source Reverse Leakage -100 V GS = -20V Q g Tota Gate Charge 24 = 17A Q gs Gate-to-Source Charge 6.3 nc = 48V Q gd Gate-to-Drain ("Mier") Charge 9.0 V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Deay Time 12 V DD = 30V t r Rise Time 59 = 17A t d(off) Turn-Off Deay Time 25 R G = 18Ω t f Fa Time 38 R D = 1.7Ω, See Fig. 10 L D Interna Drain Inductance 4.5 Between ead, 6 mm (0.25 in.) L C Interna Source Inductance 7.5 nh from package and center of die contact C iss Input Capacitance 720 V GS = 0V C oss Output Capacitance 360 pf = 25V C rss Reverse Transfer Capacitance 75 ƒ = 1.0MHz, See Fig. 5 r Current Sensing Ratio = 17A, V GS = 10V C oss Output Capacitance of Sensing Ces 14 pf V GS = 0V, = 25V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 17 (Body Diode) showing the A I SM Pused Source Current integra reverse G 68 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.5 V T J = 25 C, I S = 17A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 17A Q rr Reverse Recovery Charge nc di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S +L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11 ) ƒ I SD 17A, di/dt 140A/µs, V DD V (BR)DSS, T J 175 C V DD = 25V, starting T J = 25 C, L = 0.024mH R G = 25Ω, I AS = 17A. (See Figure 12) C-2 Puse width 300µs; duty cyce 2%.

3 , Drain-to-Source Votage (Vots) Fig. 1 Typica Output Characteristics, T C =25 C, Drain-to-Source Votage (Vots) Fig. 2 Typica Output Characteristics, T C =175 C, Gate-to-Source Votage (Vots) Fig. 3 Typica Transfer Characteristics R DS(on), Drain to Source On-Resistance (Normaized) T J, Junction Temperature ( C) Fig. 4 Normaized On-Resistance vs. Temperature C-3

4 Capacitance (pf) V GS, Gate-to-Source Votage (Vots), Drain-to-Source Votage (Vots) Fig. 5 Typica Capacitance vs. Drain-to- Source Votage Q G, Tota Gate Charge (nc) Fig. 6 Typica Gate Charge vs. Gate-to- Source Votage I SD, Reverse Drain Current (Amps) Drain Current (Amps) V SD, Source-to-Drain Votage (Vots) Fig. 7 Typica Source-Drain Diode Forward Votage, Drain-to-Source Votage (Vots) Fig. 8 Maximum Safe Operating Area C-4

5 T C, Case Temperature ( C) Fig. 9 Maximum Drain Current vs. Case Temperature Starting T J, Junction Temperature ( C) Fig. 12c Maximum Avaanche Energy vs. Drain Current Therma Repsonse (Z ΘJC ) t 1, Rectianguar Puse Duration (seconds) Fig. 11 Maximum Effective Transient Therma Impedance, Junction-to-Case C-5

6 Sense Ratio (r) Sense Ratio (r) T J, Junction Temperature ( C) Fig. 15 Typica HEXSense Ratio vs. Junction Temperature Fig. 16 Typica HEXSense Ratio vs. Drain Current Sense Ratio (r) Fig. 18 HEXSense Ratio Test Circuit Mechanica drawings, Appendix A Part marking information, Appendix B Test Circuit diagrams, Appendix C C-6 V GS, Gate-to-Source Votage (Vots) Fig. 17 Typica HEXSense Ratio vs. Gate Votage Fig. 19 HEXSense Sensing Ce Output Capacitance Test Circuit