Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
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1 Logic-Leve Gate Drive dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G PD HEXFET Power MOSFET D S V DSS = V R DS(on) = 0.044Ω I D = 23 The TO-220 Fupak eiminates the need for additiona insuating hardware in commercia-industria appications. The mouding compound used provides a high isoation capabiity and a ow therma resistance between the tab and externa heatsink. This isoation TO-220 FULLPK is equivaent to using a micron mica barrier with standard TO-220 product. The Fupak is mounted to a heatsink using a singe cip or by a singe screw fixing. bsoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 23 I T C = C Continuous Drain Current, V V 6 I DM Pused Drain Current 20 P C = 25 C Power Dissipation 54 W Linear Derating Factor 0.36 W/ C V GS Gate-to-Source Votage ± 6 V E S Singe Puse vaanche Energy 3 mj I R vaanche Current 8 E R Repetitive vaanche Energy 5.4 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 screw bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 2.8 C/W R θj Junction-to-mbient 65 6/23/04
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I D = m V GS = V, I D = 2 R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 5.0V, I D = V GS = 4.0V, I D = V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µ g fs Forward Transconductance 4 S V DS = 25V, I D = 8 I DSS Drain-to-Source Leakage Current 25 V DS = V, V GS = 0V µ 250 V DS = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage V GS = 6V n Gate-to-Source Reverse Leakage - V GS = -6V Q g Tota Gate Charge 74 I D = 8 Q gs Gate-to-Source Charge 9.4 nc V DS = 80V Q gd Gate-to-Drain ("Mier") Charge 38 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On Deay Time V DD = 50V t r Rise Time 8 I ns D = 8 t d(off) Turn-Off Deay Time 39 R G = 5.0Ω, V GS = 5.0V t f Fa Time 62 R D = 2.7Ω, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 800 V GS = 0V C oss Output Capacitance 350 V DS = 25V pf C rss Reverse Transfer Capacitance 70 ƒ =.0MHz, See Fig. 5 C Drain to Sink Capacitance 2 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current MOSFET symbo 23 (Body Diode) showing the I SM Pused Source Current integra reverse G 20 (Body Diode) p-n junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 8, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 8 Q rr Reverse RecoveryCharge..7 µc di/dt = /µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) D S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =.9mH R G = 25Ω, I S = 8. (See Figure 2) ƒ I SD 8, di/dt 80/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%. t=60s, ƒ=60hz Uses IRL540N data and test conditions
3 I D, Drain-to-Source Current () VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current () VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH T J = 25 C 0. V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 75 C 0. V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current () T = 25 C J T = 75 C J V DS = 50V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) I D = 30 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature
4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss C oss Crss 0 V DS, Drain-to-Source Votage (V) V, Gate-to-Source Votage (V) GS I D = 8 V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current () T = 75 C J T = 25 C J I D, Drain Current () OPERTION IN THIS RE LIMITED BY RDS(on) µs µs ms V GS = 0V V SD, Source-to-Drain Votage (V) T C = 25 C T ms J = 75 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating rea
5 25 V DS R D I D, Drain Current () T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V DS 90% R G V GS 5.0V Puse Width µs Duty Factor 0. % D.U.T. % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms - V DD Therma Response (Z thjc ) 0. D = SINGLE PULSE t2 (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t Fig. Maximum Effective Transient Therma Impedance, Junction-to-Case
6 5V V DS L DRIVER R G D.U.T IS - V DD V tp 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)DSS tp E S, Singe Puse vaanche Energy (mj) ID TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 2c. Maximum vaanche Energy Vs. Drain Current I S Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q GD D.U.T. V - DS V GS V G 3m Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-ppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For N-Channe HEXFETS
8 TO-220 Fu-Pak Package Outine Dimensions are shown in miimeters (inches) TO-220 Fu-Pak Part Marking Information E XMP LE : T H IS IS N IR F I840G WITH SSEMBLY LOT CODE 3432 S S EMB LE D ON WW IN THE SSEMBLY LINE "K" Note: "P" in assemby ine position indicates "Lead-Free" INT E R NT IONL R E CT IF IE R LOGO S S E M B L Y LOT CODE IR FI840G 924K PRT NUMBER DTE CODE YER 9 = 999 WE EK 24 LINE K Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information.06/04
9 Note: For the most current drawings pease refer to the IR website at:
Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
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HEXFET Power MOSFET dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa
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More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
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Surface Mount dvanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationV DSS R DS(on) max Qg 30V GS = 10V 9.3nC
IRFH792PbF Appications High Frequency Point-of-Load Synchronous Buck Converter for Appications in Neworking & Computing Systems Optimized for Contro FET Appications HEXFET Power MOSFET V DSS R DS(on) max
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Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
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dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF 8 7 6 4 5 HEXFET Power MOSFET P 9624 V SS =
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P 9604 IRF7304QPbF dvanced Process Technoogy Utra Low OnResistance ua P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S G S2 G2 8 2 3 4 5 HEXFET Power MOSFET 7 V
More informationThermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient 100 C/W
P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
Utra Low On-Resistance Dua P-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationIRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A
PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs
More informationIRFR/U5505. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.11Ω I D = -18A
Utra Low OnResistance PChanne Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
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P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
More informationIRL540NS/L. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.044Ω I D = 36A. Absolute Maximum Ratings. Thermal Resistance PD
l dvanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A
HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationIRFL110 V DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A SOT-223
PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS Rds(on) max I D
SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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