Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
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1 HEXFET Power MOSFET P IRF730PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. Power dissipation of greater than 0.8W is possibe in a typica PCB mount appication. S G S2 G2 2 3 Top View V SS = 20V R S(on) = 0.050Ω SO-8 bsoute Maximum Ratings Parameter Max. Units T = 25 C Sec. Pused rain Current, V 4.5V 5.7 T = 25 C Continuous rain Current, V 4.5V 5.2 T = 70 C Continuous rain Current, V 4.5V 4. I M Pused rain Current 2 = 25 C Power issipation 2.0 W Linear erating Factor 0.06 W/ C V GS Gate-to-Source Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Therma Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 62.5 C/W /6/04
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m R S(ON) Static rain-to-source On-Resistance V GS = 4.5V, I = 2.6 ƒ Ω V GS = 2.7V, I = 2.2 ƒ V GS(th) Gate Threshod Votage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 8.3 S V S = 5V, I = 2.6 I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C Gate-to-Source Forward Leakage 0 V GS = 2V I GSS n Gate-to-Source Reverse Leakage -0 V GS = - 2V Q g Tota Gate Charge 20 I = 2.6 Q gs Gate-to-Source Charge 2.2 nc V S = 6V Q gd Gate-to-rain ("Mier") Charge 8.0 V GS = 4.5V, See Fig. 6 and 2 ƒ t d(on) Turn-On eay Time 9.0 V = V t r Rise Time 42 I = 2.6 ns t d(off) Turn-Off eay Time 32 R G = 6.0Ω t f Fa Time 5 R = 3.8Ω, See Fig. ƒ L Interna rain Inductance 4.0 L S Interna Source Inductance 6.0 Between ead tip and center of die contact C iss Input Capacitance 660 V GS = 0V C oss Output Capacitance 280 pf V S = 5V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz, See Fig. 5 nh G S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.5 (Body iode) showing the I SM Pused Source Current integra reverse G 2 (Body iode) p-n junction diode. S V S iode Forward Votage.0 V T J = 25 C, I S =.8, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.6 Q rr Reverse RecoveryCharge nc di/dt = 0/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Puse width 300µs; duty cyce 2%. I S 2.6, di/dt 0/µs, V V (BR)SS, T J 50 C Surface mounted on FR-4 board, t sec.
3 I, rain-to-source Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V 20µs PULSE WITH 20µs PULSE WITH.5V T J = 25 C T J = 50 C V S, rain-to-source Votage (V) I, rain-to-source Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 0 T J = 25 C T J = 50 C V S = 5V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) I = 4.3 V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature
4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd C iss C oss C rss V, Gate-to-Source Votage (V) GS I = 2.6 V S = 6V 0 0 V S, rain-to-source Votage (V) 0 FOR TEST CIRCUIT SEE FIGURE Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0 T J = 50 C T J = 25 C T = 25 C ms TJ = 50 C V = 0V Singe Puse 0. GS V S, Source-to-rain Votage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) 0us ms V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea
5 V S R R G V GS.U.T. - V I, rain Current () Fig a. Switching Time Test Circuit V S 90% 4.5V Puse Width µs uty Factor 0. % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. mbient Temperature Fig b. Switching Time Waveforms 0 Therma Response (Z thj ) = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient
6 Current Reguator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 4.5V Q GS Q G.U.T. V - S V GS V G 3m Charge Fig 2a. Basic Gate Charge Waveform I G I Current Samping Resistors Fig 2b. Gate Charge Test Circuit
7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - ** V GS * R G dv/dt controed by R G I S controed by uty Factor "".U.T. - evice Under Test - * V * Reverse Poarity for P-Channe ** Use P-Channe river for P-Channe Measurements river Gate rive Period P.W. = P.W. Period [ V GS =V ] ***.U.T. I S Waveform Reverse Recovery Current Re-ppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3. For N-Channe HEXFETS
8 SO-8 Package Outine imensions are shown in miimeters (inches) E 6 6X e B H 0.25 [.0] INCHES IM MIN MX b MILLIMETERS MIN MX c E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L y e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOT ES:. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBS TRTE [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information (Lead-Free) EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 TE COE (YWW) P = ES IGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF T HE YER WW = WEE K = S S EMB LY S ITE COE LOT COE PRT NUMBER
9 SO-8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information./04
Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
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More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
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pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters Benefits l Very Low R S(on)
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationS2 1 G2 2 G1 4. RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000
P 9766 HEXFET Power MOSFET V S 3 V R S(on) max (@V GS = V) 6.3 mω S2 G2 2 8 7 2 2 R S(on) max (@V GS = 4.5V) 23.8 mω Q g (typical) 9 nc I (@T = 25 C) S 3 G 4 6 5 SO8 9.2 pplications Charge and ischarge
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationV DSS = 55V. R DS(on) = 0.040Ω I D = 28A
PD- 937C IRLR/U2705 HEXFET Power MOSFET Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V
More informationTO-220AB contribute to its wide acceptance throughout the industry.
dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationIRF530N. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 90mΩ I D = 17A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
More informationPRELIMINARY. Symbol Maximum Units N-Channel P-Channel Drain-Source Voltage V DS Gate-Source Voltage V GS ± 20 T A = 25 C 2.
l l l l l Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET Surface Mount Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing
More informationIRFP254N. HEXFET Power MOSFET V DSS = 250V. R DS(on) = 125mΩ I D = 23A
PD 9423 HEXFET Power MOSFET Advanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Ease of Paraeing Simpe Drive Requirements G D S V DSS = 250V R DS(on)
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationIRF3205 HEXFET Power MOSFET
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationIRF3205SPbF IRF3205LPbF
Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationIRFBA90N20DPbF HEXFET Power MOSFET
SMPS MOSFET PD - 95902 IRFBA90N20DPbF HEXFET Power MOSFET Appications High frequency DC-DC converters Lead-Free V DSS R DS(on) max I D 200V 0.023Ω 98A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationSMPS MOSFET. V DSS R DS(on) max I D
Appications Synchronous Rectification Active ORing Lead-Free SMPS MOSFET PD - 95481 IRFP3703PbF HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits Utra Low On-Resistance Low Gate Impedance
More informationIRFZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 17.5mΩ I D = 49A
Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier
More informationIRF1404SPbF IRF1404LPbF HEXFET Power MOSFET
Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Seventh Generation HEXFET Power MOSFETs from Internationa
More informationV DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Appications High frequency DC-DC converters Pasma Dispay Pane Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design, (See
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Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa
More informationV DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A
PD - 90861B IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationSMPS MOSFET. Symbol Parameter Max. Units
P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationSMPS MOSFET. V DSS R DS(on) max I D. l TO-220AB
PD 94208 SMPS MOSFET IRFB42N20D Appications High frequency DCDC converters Motor Contro Uninterrutibe Power Suppies HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 44A Benefits Low GatetoDrain Charge
More informationIRLMS1503. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance
PD - 9352 HEXFET Power MOSFET dvanced Process Technoogy Surface Mount (IRF530NS) Low-profie through-hoe (IRF530NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated G D S V DSS =V R DS(on) =
More informationV DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated C-C Converters l Synchronous Fet for Non-Isolated C-C Converters l Lead-Free Benefits l
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
More informationIRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance
l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
More informationIRL3803 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.006Ω I D = 120A PRELIMINARY. Description. Absolute Maximum Ratings
l Logic-Level Gate rive l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l Surface Mount (IRFR20N) Straight Lead (IRFU20N) dvanced Process Technology Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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