IRF7601 PD D. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.035Ω

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1 P Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET Very Sma SOIC Package Low Profie (<.mm) vaiabe in Tape & Ree Fast Switching escription S S S G Top View IRF760 HEXFET Power MOSFET V SS = 20V R S(on) = 0.035Ω Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The new Micro8 package, with haf the footprint area of the standard SO-8, provides the smaest footprint avaiabe in an SOIC outine. This makes the Micro8 an idea device for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro8 wi aow it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCI cards. Micro8 bsoute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V 4.5V 5.7 T = 70 C Continuous rain Current, V 4.5V 4.6 I M Pused rain Current 30 = 25 C Power issipation.8 W Linear erating Factor 4 mw/ C V GS Gate-to-Source Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Therma Resistance Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 70 C/W Micro8 ata Sheets refect improved Therma Resistance, Power and Current -Handing Ratings- effective ony for product marked with ate Code 505 or ater. 8/25/97

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance V GS = 4.5V, I = 3.8 ƒ Ω V GS = 2.7V, I =.9 ƒ V GS(th) Gate Threshod Votage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 6. S V S = V, I =.9.0 V S = 6V, V GS = 0V I SS rain-to-source Leakage Current µ 25 V S = 6V, V GS = 0V, T J = 25 C Gate-to-Source Forward Leakage -0 V GS = -2V I GSS n Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge 4 22 I = 3.8 Q gs Gate-to-Source Charge nc V S = 6V Q gd Gate-to-rain ("Mier") Charge V GS = 4.5V, See Fig. 6 and 9 ƒ t d(on) Turn-On eay Time 5. V = V t r Rise Time 47 I = 3.8 ns t d(off) Turn-Off eay Time 24 R G = 6.2Ω t f Fa Time 32 R = 2.6Ω, See Fig. ƒ C iss Input Capacitance 650 V GS = 0V C oss Output Capacitance 300 pf V S = 5V C rss Reverse Transfer Capacitance 50 ƒ =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo.8 (Body iode) showing the I SM Pused Source Current integra reverse 30 (Body iode) p-n junction diode. V S iode Forward Votage.2 V T J = 25 C, I S = 3.8, V GS = 0V ƒ t rr Reverse Recovery Time 5 77 ns T J = 25 C, I F = 3.8 Q rr Reverse RecoveryCharge 69 0 nc di/dt = 0/µs ƒ G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) I S 3.8, di/dt 96/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2%. Surface mounted on FR-4 board, t sec.

3 I, rain-to-source C urrent () 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V I, rain-to-source C urrent () 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V.5V 20µs PULSE WITH 0. T J = 25 C 0. V S, rain-to-source Votage (V) Fig. Typica Output Characteristics 20µs PULSE WITH 0. T J = 50 C 0. V S, rain-to-source Votage (V) Fig 2. Typica Output Characteristics I, rain-to-s ource C urrent ( ) 0 T J = 50 C T J= 25 C V S = V 20µs PULSE W ITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source O n Resistance (N orm aize d) I = 3.8 V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature

4 C, Capacitance (pf) C is s C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 0 V S, rain-to-source Votage (V) V GS, G ate-to-source V otage (V ) I = 3.8 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0 T J = 50 C T J= 25 C I, rain Current ( ) 0 OPE RTION IN THIS RE LIMITE BY RS(on) 0µs ms T = 25 C T J = 50 C ms V GS = 0V Singe Puse V S, Source-to-rain Votage (V) V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea

5 Q G V S R 4.5V Q GS Q G R G V GS.U.T. - V V G 4.5V Charge Puse Width µs uty Factor 0. % Fig 9a. Basic Gate Charge Waveform Fig a. Switching Time Test Circuit Current Reguator Same Type as.u.t. V S 2V.2µF 50KΩ.3µF 90%.U.T. V - S V GS % V GS t d(on) t r t d(off) t f 3m I G I Current Samping Resistors Fig 9b. Gate Charge Test Circuit Fig b. Switching Time Waveforms 0 Therma Response (Z thj ) = SINGLE PULSE Notes: (THERML RESPONSE). uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient

6 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G river same type as.u.t. I S controed by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-ppied Votage Inductor Curent Body iode Forward rop Rippe 5% I S * V GS = 5V for Logic Leve evices Fig 2. For N-Channe HEXFETS

7 Package Outine Micro8 Outine imensions are shown in miimeters (inches) - B E H (.0) M M e 6X e - C - 0. (.004) B 8X 0.08 (.00 3 ) M C S B S θ LE SSIGNM ENTS SINGLE L 8X UL S S S G S G S2 G2 C 8X IN C H E S M IL LIM E TE RS IM M IN M X M IN M X B C e.0256 BSIC 0.65 BSIC e.028 BSIC 0.33 BSIC E H L θ (.04 ) 8 X RECOMMENE FOOTPRINT 3.20 (.26 ) 0.38 (.05 ) 8X (.67 ) (.208 ) NOTES: IMENSIONING N TOLERNCING PER NSI Y4.5M CONTROLLING IMENSION : INCH. 3 IME NSIO NS O NO T INCL UE MO L FLS H (.0256 ) 6X Part Marking Information Micro8 EXMPLE : THIS IS N IRF750 TE COE (YW W) Y = LST IGIT OF YER W W = WEEK PRT NUMBER TOP

8 Tape & Ree Information Micro8 imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. OUTLINE CONFORMS TO EI-48 & EI CONTROLLING IMENSION : MILLIMETER (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 8/97